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DB104

Description
1 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size398KB,3 Pages
ManufacturerETC2
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DB104 Overview

1 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE

DB104 Parametric

Parameter NameAttribute value
Number of terminals4
Number of components4
Minimum breakdown voltage400 V
Maximum average input current1 A
Processing package descriptionPLASTIC, DB, 4 PIN
stateACTIVE
packaging shapeRECTANGULAR
Package SizeIN-LINE
Terminal formTHROUGH-HOLE
Terminal locationDUAL
Packaging MaterialsPLASTIC/EPOXY
structureBRIDGE, 4 ELEMENTS
Diode component materialsSILICON
Diode typeBRIDGE RECTIFIER DIODE
Phase1
Maximum repetitive peak reverse voltage400 V
Maximum non-repetitive peak forward current50 A
MC C
Micro Commercial Components
TM
  omponents
20736 Marilla
Street Chatsworth

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DB101
THRU
DB107
1 Amp Single Phase
Glass Passivated
Bridge Rectifier
50 to 1000 Volts
DB-1
Notch
Features
Lead Free Finish/Rohs Compliant (Note1) ("P"Suffix designates
Compliant. See ordering information)
4-PIN DIP
Package
Glass Passivated Diode Construction
UL Recognized File # E165989
High Surge Current Capability
Epoxy meets UL 94 V-0 flammability rating
Moisture Sensitivity Level 1
Halogen
free available upon request by adding suffix "-HF"
Operating Junction Temperature: -55°C to +150°C
Storage Temperature: -55°C to +150°C
Thermal Resistance : Rthja: 40C/W;RthJL:15C/W.
MCC
Catalog
Number
Device
Marking
Maximum
Recurrent
Peak Reverse
Voltage
50V
100V
200V
400V
600V
800V
1000V
Maximum
RMS
Voltage
Maximum
DC
Blocking
Voltage
50V
100V
200V
400V
600V
800V
1000V
Maximum Ratings
B
-
~
A
+
C
~
DB101
DB102
DB103
DB104
DB105
DB106
DB107
DB101
DB102
DB103
DB104
DB105
DB106
DB107
35V
70V
140V
280V
420V
560V
700V
E
F
G
D
H
Electrical Characteristics @ 25 Unless Otherwise Specified
°C
Average Forward
Current
Peak Forward Surge
Current
Maximum
Instantaneous
Forward Voltage
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
Typical Junction
Capacitance
I
F(AV)
1A
T
A
= 40°C
DIMENSIONS
I
FSM
30A
8.3ms, half sine
DIM
A
B
C
D
E
F
G
H
MIN
.316
.245
.300
.236
.102
INCHES
MM
V
F
1.1V
I
FM
= 1.0A;
T
J
= 25°C
MAX
.335
.255
.350
.299
.130
.060
.022
.205
MIN
8.05
6.20
7.60
6.01
2.60
1.50
.41
5.00
MAX
8.51
6.50
8.90
7.60
3.30
.56
5.20
NOTE
I
R
10µA
0.5mA
T
J
= 25°C
T
J
= 125°C
.016
.195
Typ
Typ
C
J
25pF
Measured at
1.0MHz, V
R
=4.0V
Notes:1.High Temperature Solder Exemption Applied, see EU Directive Annex 7.
Revision:
C
www.mccsemi.com
1 of 3
2014/03/05

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