MT5C2568DJ-20AT datasheet, PDF

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MT5C2568DJ-20AT: DescriptionStandard SRAM, 32KX8, 20ns, CMOS, PDSO28; Categorystorage storage; File Size113KB，12 Pages; ManufacturerMicron Technology; Websitehttp://www.mdtic.com.tw/

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MT5C2568DJ-20AT Overview

Standard SRAM, 32KX8, 20ns, CMOS, PDSO28

MT5C2568DJ-20AT Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Micron Technology
Reach Compliance Code	not_compliant
Maximum access time	20 ns
I/O type	COMMON
JESD-30 code	R-PDSO-J28
JESD-609 code	e0
memory density	262144 bit
Memory IC Type	STANDARD SRAM
memory width	8
Number of terminals	28
word count	32768 words
character code	32000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	125 °C
Minimum operating temperature	-40 °C
organize	32KX8
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	SOJ
Encapsulate equivalent code	SOJ28,.34
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Parallel/Serial	PARALLEL
power supply	5 V
Certification status	Not Qualified
Maximum standby current	0.007 A
Minimum standby current	4.5 V
Maximum slew rate	0.165 mA
Nominal supply voltage (Vsup)	5 V
surface mount	YES
technology	CMOS
Temperature level	AUTOMOTIVE
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	J BEND
Terminal pitch	1.27 mm
Terminal location	DUAL

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OBSOLETE 3/1/95

MT5C2568

32K x 8 SRAM

SRAM

FEATURES

• High speed: 10, 12, 15, 20 and 25

• High-performance, low-power, CMOS double-metal

process

• Single +5V

±10%

power supply

• Easy memory expansion with

E and

E options

• All inputs and outputs are TTL-compatible

32K x 8 SRAM

PIN ASSIGNMENT (Top View)

28-Pin DIP

(SA-4)

A14

A12

Vcc

A13

A11

A10

DQ8

DQ7

DQ6

DQ5

DQ4

28-Pin SOJ

(SD-2)

A14

A12

DQ1

DQ2

DQ3

Vss

Vcc

A13

A11

A10

DQ8

DQ7

DQ6

DQ5

DQ4

OPTIONS

• Timing

10ns access

12ns access

15ns access

20ns access

25ns access

• Packages

Plastic DIP (300 mil)

Plastic SOJ (300 mil)

• 2V data retention (optional)

• Low power (optional)

MARKING

-10

-12

-15

-20

-25

None

DQ1

DQ2

DQ3

Vss

• Temperature

Commercial (0°C to +70°C)

Industrial

(-40°C to +85°C)

Automotive (-40°C to +125°C)

Extended

(-55°C to +125°C)

• Part Number Example: MT5C2568DJ-20 L

NOTE: Not all combinations of operating temperature, speed, data retention

and low power are necessarily available. Please contact the factory for availabil-

ity of specific part number combinations.

GENERAL DESCRIPTION

The MT5C2568 is organized as a 32,768 x 8 SRAM using

a four-transistor memory cell with a high-speed, low-power

CMOS process. Micron SRAMs are fabricated using double-

layer metal, double-layer polysilicon technology.

For flexibility in high-speed memory applications,

Micron offers chip enable (/C

E) and output enable (?O

E) with

this organization. These enhancements can place the out-

puts in High-Z for additional flexibility in system design.

Writing to these devices is accomplished when write

enable (?W

E) and

E inputs are both LOW. Reading is

accomplished when

E remains HIGH and

E and

E go

LOW. The device offers a reduced power standby mode

MT5C2568

Rev. 2/95

when disabled. This allows system designers to meet low

standby power requirements.

The “P” version provides a reduction in both operating

current (I

) and TTL standby current (I

). The latter is

achieved through the use of gated inputs on the

E and

address lines, which also facilitates the design of battery

backed systems. That is, the gated inputs simplify the

design effort and circuitry required to protect against inad-

vertent battery current drain during power-down, when

inputs may be at undefined levels.

All devices operate from a single +5V power supply and

all inputs and outputs are fully TTL-compatible.

Micron Semiconductor, Inc., reserves the right to change products or specifications without notice.

Micron Semiconductor, Inc.

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