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SA10LA03

Description
1 A, 30 V, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size916KB,2 Pages
ManufacturerNihon Inter Electronics Corporation
Websitehttp://www.niec.co.jp
Download Datasheet View All

SA10LA03 Overview

1 A, 30 V, SILICON, SIGNAL DIODE

1.0A Avg.
Item
く り 返 し ピ ー ク 逆 電 圧
Repetitive Peak Reverse Voltage
Direct Forward Current
30 Volts
Symbol
V
RRM
I
DC
I
o
I
FSM
T
jw
T
stg
Direct Current
SBD
Conditions
30
T
a
=74℃
*1
T
a
=38℃
*1
,V
RM
=15V
Tl=91℃,V
RM
=15V
(Tl: Lead Temperature)
SA10LA03
■OUTLINE DRAWING(mm)
Unit
V
1.41
1.0
A
A
0.3
0.2
0.2
0.3
0.3
■最大定格 Maximum Ratings
0.2
Average rectified Forward Current
Surge Forward Current
½
RECT 180℃
Rectangular Wave
50% Duty
0.1
0.05
(50Hz正弦半波1サイクル非くり返し)
20
Half Sine Wave,1cycle, Non-repetitive
A
1.1
0.1
参考はんだパッド½状
(e.g. Soldering Pad)
2.0
0.8
1.0
1.9
動 ½ 接 合 温 度 範 囲
Operating Junction Temperature Range
Storage Temperature Range
−40∼+125
−40∼+150
■電気的・熱的特性 Electrical/ Thermal Characteristics
Item
Peak Reverse Current
Peak Forward Voltage
Thermal Resistance
■APPROX. NET WEIGHT:0.004 g
Symbol
I
RM
V
FM
R
th(j-a)
R
th(j-l)
Conditions
V
RM
=5V T
a
=25℃
V
RM
=30V T
a
=25℃
I
FM
=0.7A T
a
=25℃
I
FM
=1.0A T
a
=25℃
*1(アルミナ基板実装)
接合部½周囲間
(Junction to Ambient)
*2(ガラエボ基板実装)
接合部½リード間(Junction to Lead)
Min.
Typ.
50
0.5
0.33
0.39
Max.
1.5
0.37
100
150
30
Unit
μA
mA
V
℃/W
*1:プリント基板実装/Alumina Substrate Mounted (Soldering Land=6×6mm)
*2:プリント基板実装/Glass-Epoxy Substrate Mounted (Soldering Land=6×6mm)
■定格・特性曲線
FIG.1
FIG.2
FIG.3
FIG.4
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