THMR1N8E-8 datasheet, PDF - EEWORLD Datasheet

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THMR1N8E-8: DescriptionIC 64M X 16 DIRECT RAMBUS DRAM MODULE, DMA184, DIMM-184, Dynamic RAM; Categorystorage storage; File Size703KB，12 Pages; ManufacturerToshiba Semiconductor; Websitehttp://toshiba-semicon-storage.com/

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THMR1N8E-8 Overview

IC 64M X 16 DIRECT RAMBUS DRAM MODULE, DMA184, DIMM-184, Dynamic RAM

THMR1N8E-8 Parametric

Parameter Name	Attribute value
Maker	Toshiba Semiconductor
Parts packaging code	DIMM
package instruction	DIMM, DIMM184,40
Contacts	184
Reach Compliance Code	unknown
ECCN code	EAR99
access mode	BLOCK ORIENTED PROTOCOL
Maximum access time	45 ns
Other features	SELF CONTAINED REFRESH; WD-MAX
Maximum clock frequency (fCLK)	800 MHz
I/O type	COMMON
JESD-30 code	R-XDMA-N184
length	133.35 mm
memory density	1073741824 bit
Memory IC Type	RAMBUS DRAM MODULE
memory width	16
Number of functions	1
Number of ports	1
Number of terminals	184
word count	67108864 words
character code	64000000
Operating mode	SYNCHRONOUS
organize	64MX16
Output characteristics	3-STATE
Package body material	UNSPECIFIED
encapsulated code	DIMM
Encapsulate equivalent code	DIMM184,40
Package shape	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY
power supply	1.8/2.5,2.5 V
Certification status	Not Qualified
Maximum seat height	31.75 mm
self refresh	YES
Maximum supply voltage (Vsup)	2.63 V
Minimum supply voltage (Vsup)	2.37 V
Nominal supply voltage (Vsup)	2.5 V
surface mount	NO
technology	CMOS
Terminal form	NO LEAD
Terminal pitch	1 mm
Terminal location	DUAL
width	4.8 mm

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THMR1N8E-8 Related Products

	THMR1N8E-8	THMR1N8E-6	THMR1N8E-7
Description	IC 64M X 16 DIRECT RAMBUS DRAM MODULE, DMA184, DIMM-184, Dynamic RAM	IC 64M X 16 DIRECT RAMBUS DRAM MODULE, DMA184, DIMM-184, Dynamic RAM	IC 64M X 16 DIRECT RAMBUS DRAM MODULE, DMA184, DIMM-184, Dynamic RAM
Maker	Toshiba Semiconductor	Toshiba Semiconductor	Toshiba Semiconductor
Parts packaging code	DIMM	DIMM	DIMM
package instruction	DIMM, DIMM184,40	DIMM, DIMM184,40	DIMM, DIMM184,40
Contacts	184	184	184
Reach Compliance Code	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99
access mode	BLOCK ORIENTED PROTOCOL	BLOCK ORIENTED PROTOCOL	BLOCK ORIENTED PROTOCOL
Maximum access time	45 ns	53 ns	45 ns
Other features	SELF CONTAINED REFRESH; WD-MAX	SELF CONTAINED REFRESH; WD-MAX	SELF CONTAINED REFRESH; WD-MAX
Maximum clock frequency (fCLK)	800 MHz	600 MHz	711 MHz
I/O type	COMMON	COMMON	COMMON
JESD-30 code	R-XDMA-N184	R-XDMA-N184	R-XDMA-N184
length	133.35 mm	133.35 mm	133.35 mm
memory density	1073741824 bit	1073741824 bit	1073741824 bit
Memory IC Type	RAMBUS DRAM MODULE	RAMBUS DRAM MODULE	RAMBUS DRAM MODULE
memory width	16	16	16
Number of functions	1	1	1
Number of ports	1	1	1
Number of terminals	184	184	184
word count	67108864 words	67108864 words	67108864 words
character code	64000000	64000000	64000000
Operating mode	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
organize	64MX16	64MX16	64MX16
Output characteristics	3-STATE	3-STATE	3-STATE
Package body material	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
encapsulated code	DIMM	DIMM	DIMM
Encapsulate equivalent code	DIMM184,40	DIMM184,40	DIMM184,40
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY
power supply	1.8/2.5,2.5 V	1.8/2.5,2.5 V	1.8/2.5,2.5 V
Certification status	Not Qualified	Not Qualified	Not Qualified
Maximum seat height	31.75 mm	31.75 mm	31.75 mm
self refresh	YES	YES	YES
Maximum supply voltage (Vsup)	2.63 V	2.63 V	2.63 V
Minimum supply voltage (Vsup)	2.37 V	2.37 V	2.37 V
Nominal supply voltage (Vsup)	2.5 V	2.5 V	2.5 V
surface mount	NO	NO	NO
technology	CMOS	CMOS	CMOS
Terminal form	NO LEAD	NO LEAD	NO LEAD
Terminal pitch	1 mm	1 mm	1 mm
Terminal location	DUAL	DUAL	DUAL
width	4.8 mm	4.8 mm	4.8 mm

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