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BYT3400B-TR

Description
3A, 400V, SILICON, RECTIFIER DIODE, PLASTIC, DPAK-3
CategoryDiscrete semiconductor    diode   
File Size43KB,3 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Environmental Compliance
Download Datasheet Parametric View All

BYT3400B-TR Overview

3A, 400V, SILICON, RECTIFIER DIODE, PLASTIC, DPAK-3

BYT3400B-TR Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerSTMicroelectronics
Parts packaging codeDPAK
package instructionPLASTIC, DPAK-3
Contacts3
Reach Compliance Codenot_compliant
ECCN codeEAR99
Other featuresLOW NOISE
applicationFAST RECOVERY
Shell connectionCATHODE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.5 V
JESD-30 codeR-PSSO-G2
JESD-609 codee3
Maximum non-repetitive peak forward current60 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Maximum output current3 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage400 V
Maximum reverse current20 µA
Maximum reverse recovery time0.06 µs
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED

BYT3400B-TR Preview

®
BYT3400B(-TR)
FAST RECOVERY RECTIFIER DIODE
MAIN PRODUCT CHARACTERISTICS
I
F(AV)
V
RRM
V
F
(max)
FEATURES AND BENEFITS
VERY LOW REVERSE RECOVERY TIME
VERY LOW SWITCHING LOSSES
LOW NOISE TURN-OFF SWITCHING
SURFACE MOUNT PACKAGE
TAPE AND REEL OPTION : -TR
DESCRIPTION
Single high voltage rectifier suited to Switch Mode
Power Supplies and other power converters.
ABSOLUTE MAXIMUM RATINGS
Symbol
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
Tstg
Tj
RMS forward current
Average forward current
Surge non repetitive forward current
Storage temperature range
Maximum junction temperature
Tcase = °C
δ
= 0.5
tp = 10 ms Sinusoidal
Parameter
Repetitive peak reverse voltage
Value
400
10
3
60
- 40 to + 150
150
Unit
V
A
A
A
°C
°C
3A
400 V
1.4 V
3
2, 4 (Tab)
4
2
1 (nc)
3
DPAK
(Plastic)
THERMAL RESISTANCES
Symbol
R
TH (j-c)
Junction to case
Parameter
Value
TBD
Unit
°C/W
STATIC ELECTRICAL CHARACTERISTICS
Symbol
I
R
*
V
F
**
Pulse test :
Tests Conditions
Reverse leakage current
Forward voltage drop
* tp = 5 ms,
δ
< 2 %
** tp = 380
µs, δ
< 2%
Tests Conditions
Tj = 25°C
Tj = 100°C
Tj = 25°C
Tj = 100°C
I
F
= 3 A
I
F
= 3 A
V
R
= V
RRM
Min.
Typ.
Max.
20
0.5
1.5
1.4
Unit
µA
mA
V
October 1999 - Ed : 1C
1/3
BYT3400B(-TR)
RECOVERY CHARACTERISTICS
Symbol
t
rr
Tj = 25°C
Test Conditions
I
F
= 0.5A
I
R
= 1A
I
F
= 1A
V
R
= 30V
TURN-OFF SWITCHING CHARACTERISTICS
Symbol
t
IRM
I
RM
Vcc = 200V
Tj = 100°C
Test Conditions
I
F
= 3A
dI
F
/dt = -50 A/µs
Lp
0.05µH
Min.
Typ.
35
1.5
Max.
50
2
Unit
ns
A
Irr = 0.25A
dI
F
/dt = -15 A/µs
Min.
Typ.
Max.
25
60
Unit
ns
ns
To evaluate the maximum conduction losses use the following equation :
2
P = 1.1 x IF(AV) + 0.08 IF (RMS)
2/3
BYT3400B(-TR)
PACKAGE MECHANICAL DATA
DPAK
DIMENSIONS
REF.
A
A1
A2
B
B2
C
C2
D
E
G
H
L2
L4
V2
Millimeters
Min.
Max
2.20
2.40
0.90
1.10
0.03
0.23
0.64
0.90
5.20
5.40
0.45
0.60
0.48
0.60
6.00
6.20
6.40
6.60
4.40
4.60
9.35
10.10
0.80 typ.
0.60
1.00
Inches
Min.
Max.
0.086
0.094
0.035
0.043
0.001
0.009
0.025
0.035
0.204
0.212
0.017
0.023
0.018
0.023
0.236
0.244
0.251
0.259
0.173
0.181
0.368
0.397
0.031 typ.
0.023
0.039
FOOT PRINT
(in millimeters)
6.7
6.7
3
3
1.6
2.3
2.3
1.6
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap-
proval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
© 1999 STMicroelectronics - Printed in Italy - All rights reserved.
STMicroelectronics GROUP OF COMPANIES
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http://www.st.com
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