KCU20A20 datasheet, PDF - EEWORLD Datasheet

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KCU20A20: Description20 A, 200 V, SILICON, RECTIFIER DIODE; CategoryDiscrete semiconductor diode; File Size111KB，1 Pages; ManufacturerNihon Inter Electronics Corporation; Websitehttp://www.niec.co.jp

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KCU20A20 Overview

20 A, 200 V, SILICON, RECTIFIER DIODE

KCU20A20 Parametric

Parameter Name	Attribute value
Maker	Nihon Inter Electronics Corporation
Objectid	1656640014
package instruction	R-PSFM-T3
Reach Compliance Code	unknow
compound_id	6064594
application	FAST RECOVERY
Shell connection	CATHODE
Configuration	COMMON CATHODE, 2 ELEMENTS
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
JESD-30 code	R-PSFM-T3
Maximum non-repetitive peak forward current	120 A
Number of components	2
Phase	1
Number of terminals	3
Maximum operating temperature	150 °C
Minimum operating temperature	-40 °C
Maximum output current	20 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	200 V
Maximum reverse recovery time	0.032 µs
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE

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20A Avg.

Item

くり返しピーク逆電圧

Repetitive Peak Reverse Voltage

平

均

整

流

電

流

Average Rectified Forward Current

実

効

順

電

流

R.M.S. Forward Current

サ

ー

ジ

順

電

流

Surge Forward Current

動 ½ 接合温度範囲

Operating Junction Temperature Range

保

存

温

度

範

囲

Storage Temperature Range

締

付

ト

ル

ク

Mounting torque

200 Volts

Symbol

V

RRM

I

O

I

F(RMS)

I

FSM

T

jw

T

stg

F

tor

120

50Hz、正弦全波抵抗負荷

50Hz Full Sine Wave Resistive Load

FRED

Conditions

200

Tc＝101℃

22.2

50Hz正弦全波，１サイクル，非くり返し

50Hz Full Sine Wave,1cycle, Non-repetitive

KCU20A20

■OUTLINE DRAWING(mm)

Unit

V

20

A

℃

0.5

N½m

■最大定格 Maximum Ratings

−40∼＋150

推奨値

Recommended Value

■電気的・熱的特性 Electrical/ Thermal Characteristics

Item

ピ

ー

ク

逆

電

Peak Reverse Current

ピ

ー

ク

順

電

Peak Forward Voltage

逆

回

復

時

Reverse Recovery Time

熱

抵

Thermal Resistance

流

圧

間

抗

■APPROX. NET WEIGHT:5.55g

Symbol

I

RM

V

FM

trr

R

th(j-c)

Conditions

T

j

＝25℃, V

RM

＝V

RRM

,

T

j

＝25℃, I

FM

＝10A,

一素子あたり

Per Diode

一素子あたり

Per Diode

Min.

−

Typ.

−

0.94

22

−

Max.

25

1.13

32

2

Unit

μA

V

ns

℃/W

I

FM

＝10A, −di/dt＝50 A/μs, Tj＝25℃

接合部½ケース間

Junction to Case

■定格・特性曲線

FIG.1

FIG.2

FIG.3

FIG.4

FIG.5

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