PMEG3002EJ
200 mA low V
F
MEGA Schottky barrier rectifier
Rev. 01 — 15 May 2009
Product data sheet
1. Product profile
1.1 General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an
integrated guard ring for stress protection, encapsulated in a SOD323F (SC-90) small and
flat lead Surface-Mounted Device (SMD) plastic package.
1.2 Features
I
I
I
I
I
Average forward current: I
F(AV)
≤
0.2 A
Reverse voltage: V
R
≤
30 V
Low forward voltage
AEC-Q101 qualified
Small and flat lead SMD plastic package
1.3 Applications
I
I
I
I
I
I
Low voltage rectification
High efficiency DC-to-DC conversion
Switch Mode Power Supply (SMPS)
Reverse polarity protection
Ultra high-speed switching
Low power consumption applications
1.4 Quick reference data
Table 1.
Quick reference data
T
j
= 25
°
C unless otherwise specified.
Symbol
I
F(AV)
Parameter
average forward current
Conditions
square wave;
δ
= 0.5;
f = 20 kHz
T
amb
≤
135
°C
T
sp
≤
145
°C
V
R
V
F
I
R
[1]
[1]
Min
Typ
Max
Unit
-
-
-
-
-
-
-
-
420
10
0.2
0.2
30
480
40
A
A
V
mV
µA
reverse voltage
forward voltage
reverse current
I
F
= 0.2 A
V
R
= 30 V
Device mounted on a ceramic Printed-Circuit Board (PCB), Al
2
O
3
, standard footprint.
NXP Semiconductors
PMEG3002EJ
200 mA low V
F
MEGA Schottky barrier rectifier
2. Pinning information
Table 2.
Pin
1
2
Pinning
Description
cathode
anode
[1]
Simplified outline
1
2
Graphic symbol
1
2
sym001
[1]
The marking bar indicates the cathode.
3. Ordering information
Table 3.
Ordering information
Package
Name
PMEG3002EJ
SC-90
Description
plastic surface-mounted package; 2 leads
Version
SOD323F
Type number
4. Marking
Table 4.
Marking codes
Marking code
1M
Type number
PMEG3002EJ
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
R
I
F(AV)
Parameter
reverse voltage
average forward current
Conditions
T
j
= 25
°C
square wave;
δ
= 0.5;
f = 20 kHz
T
amb
≤
135
°C
T
sp
≤
145
°C
I
FRM
I
FSM
P
tot
repetitive peak forward
current
non-repetitive peak
forward current
total power dissipation
t
p
≤
1 ms;
δ ≤
0.25
square wave;
t
p
= 8 ms
T
amb
≤
25
°C
[2]
[1]
Min
-
Max
30
Unit
V
-
-
-
-
-
-
-
0.2
0.2
2.6
2.75
385
695
1045
A
A
A
A
mW
mW
mW
[3][4]
[3][5]
[3][1]
PMEG3002EJ_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 15 May 2009
2 of 13
NXP Semiconductors
PMEG3002EJ
200 mA low V
F
MEGA Schottky barrier rectifier
Table 5.
Limiting values
…continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
T
j
T
amb
T
stg
[1]
[2]
[3]
[4]
[5]
Parameter
junction temperature
ambient temperature
storage temperature
Conditions
Min
-
−55
−65
Max
150
+150
+150
Unit
°C
°C
°C
Device mounted on a ceramic PCB, Al
2
O
3
, standard footprint.
T
j
= 25
°C
prior to surge.
Reflow soldering is the only recommended soldering method.
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
2
.
6. Thermal characteristics
Table 6.
Symbol
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
Conditions
in free air
[1][2]
[3]
[4]
[5]
Min
-
-
-
-
Typ
-
-
-
-
Max
325
180
120
25
Unit
K/W
K/W
K/W
K/W
R
th(j-sp)
[1]
[2]
[3]
[4]
[5]
[6]
thermal resistance from
junction to solder point
[6]
For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse
power losses P
R
are a significant part of the total power losses.
Reflow soldering is the only recommended soldering method.
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
2
.
Device mounted on a ceramic PCB, Al
2
O
3
, standard footprint.
Soldering point of cathode tab.
PMEG3002EJ_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 15 May 2009
3 of 13
NXP Semiconductors
PMEG3002EJ
200 mA low V
F
MEGA Schottky barrier rectifier
10
3
duty cycle =
Z
th(j-a)
(K/W)
10
2
1
0.75
0.5
0.33
0.25
0.2
0.1
0.05
10
0.02
006aab476
0.01
0
1
10
−5
10
−4
10
−3
10
−2
10
−1
10
2
t
p
(s)
10
3
1
10
FR4 PCB, standard footprint
Fig 1.
10
3
Z
th(j-a)
(K/W)
10
2
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
006aab477
duty cycle =
1
0.75
0.5
0.33
0.25
0.1
0.2
10
0.02
0
1
10
−5
0.05
0.01
10
−4
10
−3
10
−2
10
−1
1
10
10
2
t
p
(s)
10
3
FR4 PCB, mounting pad for cathode 1 cm
2
Fig 2.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMEG3002EJ_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 15 May 2009
4 of 13
NXP Semiconductors
PMEG3002EJ
200 mA low V
F
MEGA Schottky barrier rectifier
10
3
Z
th(j-a)
(K/W)
10
2
006aab478
duty cycle =
1
0.75
0.5
0.33
0.25
0.2
0.05
0.02
0
0.01
10
0.1
1
10
−5
10
−4
10
−3
10
−2
10
−1
1
10
10
2
t
p
(s)
10
3
Ceramic PCB, Al
2
O
3
, standard footprint
Fig 3.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
7. Characteristics
Table 7.
Characteristics
T
j
= 25
°
C unless otherwise specified.
Symbol
V
F
Parameter
forward voltage
Conditions
I
F
= 0.1 mA
I
F
= 1 mA
I
F
= 10 mA
I
F
= 100 mA
I
F
= 200 mA
I
R
C
d
reverse current
diode capacitance
V
R
= 10 V
V
R
= 30 V
f = 1 MHz
V
R
= 1 V
V
R
= 10 V
t
rr
[1]
Min
-
-
-
-
-
-
-
-
-
[1]
Typ
130
190
250
355
420
2.5
10
18
7
5
Max
190
250
300
400
480
10
40
-
-
-
Unit
mV
mV
mV
mV
mV
µA
µA
pF
pF
ns
reverse recovery time
-
When switched from I
F
= 10 mA to I
R
= 10 mA; R
L
= 100
Ω;
measured at I
R
= 1 mA.
PMEG3002EJ_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 15 May 2009
5 of 13
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