5962F9953601VXC datasheet, PDF

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5962F9953601VXC: Description1A HALF BRDG BASED MOSFET DRIVER, CDFP16, CERAMIC, DFP-16; CategoryAnalog mixed-signal IC Drivers and interfaces; File Size159KB，25 Pages; ManufacturerRenesas Electronics Corporation; Websitehttps://www.renesas.com/

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5962F9953601VXC Overview

1A HALF BRDG BASED MOSFET DRIVER, CDFP16, CERAMIC, DFP-16

5962F9953601VXC Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Renesas Electronics Corporation
Parts packaging code	DFP
package instruction	DFP, FL16,.3
Contacts	16
Reach Compliance Code	not_compliant
ECCN code	EAR99
high side driver	YES
Interface integrated circuit type	HALF BRIDGE BASED MOSFET DRIVER
JESD-30 code	R-CDFP-F16
JESD-609 code	e0
Number of functions	1
Number of terminals	16
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
Nominal output peak current	1 A
Package body material	CERAMIC, METAL-SEALED COFIRED
encapsulated code	DFP
Encapsulate equivalent code	FL16,.3
Package shape	RECTANGULAR
Package form	FLATPACK
power supply	15 V
Certification status	Not Qualified
Filter level	MIL-PRF-38535 Class V
Maximum seat height	2.92 mm
Maximum supply voltage	20 V
Minimum supply voltage	12 V
Nominal supply voltage	15 V
surface mount	YES
technology	CMOS
Temperature level	MILITARY
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	FLAT
Terminal pitch	1.27 mm
Terminal location	DUAL
total dose	300k Rad(Si) V
width	6.73 mm

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REVISIONS

LTR

DESCRIPTION

Make change to VTHUV test specified under table I. - ro

DATE (YR-MO-DA)

00-03-07

APPROVED

R. MONNIN

Add device type 02. - ro

01-07-26

R. MONNIN

Make changes to I

and +I

tests as specified in table I. - ro

01-12-14

R. MONNIN

Make change to the high side floating supply offset voltage limit for device

type 02 as specified under 1.4. - ro

02-04-17

R. MONNIN

Add a new logic diagram for device type 02. - ro

03-04-15

R. MONNIN

REV

SHEET

REV

SHEET

REV STATUS

OF SHEETS

PMIC N/A

REV

SHEET

PREPARED BY

RICK OFFICER

CHECKED BY

RAJESH PITHADIA

STANDARD

MICROCIRCUIT

DRAWING

THIS DRAWING IS AVAILABLE

FOR USE BY ALL

DEPARTMENTS

AND AGENCIES OF THE

DEPARTMENT OF DEFENSE

AMSC N/A

DEFENSE SUPPLY CENTER COLUMBUS

COLUMBUS, OHIO 43216

http://www.dscc.dla.mil

MICROCIRCUIT, DIGITAL, RADIATION HARDENED,

HIGH FREQUENCY HALF BRIDGE DRIVER,

MONOLITHIC SILICON

APPROVED BY

RAYMOND MONNIN

DRAWING APPROVAL DATE

99-06-29

REVISION LEVEL

SIZE

SHEET

CAGE CODE

67268

1 OF

5962-99536

DSCC FORM 2233

APR 97

DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.

5962-E332-03

2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text

of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a

specific exemption has been obtained.

3. REQUIREMENTS

3.1 Item requirements. The individual item requirements for device classes Q, T and V shall be in accordance with

MIL-PRF-38535 and as specified herein or as modified in the device manufacturer's Quality Management (QM) plan. The

modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for

device class M shall be in accordance with MIL-PRF-38535, appendix A and as specified herein.

3.1.1 Microcircuit die. For the requirements for microcircuit die, see appendix A to this document.

3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified

in MIL-PRF-38535 and herein for device classes Q, T and V or MIL-PRF-38535, appendix A and herein for device class M.

3.2.1 Case outline. The case outline shall be in accordance with 1.2.4 herein.

3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1.

3.2.3 Logic diagram. The logic diagram shall be as specified on figure 2.

3.2.4 Irradiation test connections. The irradiation test connections shall be as specified in figure 3.

3.3 Electrical performance characteristics and post irradiation parameter limits. Unless otherwise specified herein, the

electrical performance characteristics and post irradiation parameter limits are as specified in table I and shall apply over the

full ambient operating temperature range.

3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical

tests for each subgroup are defined in table I.

3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturer's PIN may also be

marked as listed in MIL-HDBK-103. For packages where marking of the entire SMD PIN number is not feasible due to space

limitations, the manufacturer has the option of not marking the "5962-" on the device. For RHA product using this option, the

RHA designator shall still be marked. Marking for device classes Q, T and V shall be in accordance with MIL-PRF-38535.

Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A.

3.5.1 Certification/compliance mark. The certification mark for device classes Q, T and V shall be a "QML" or "Q" as

required in MIL-PRF-38535. The compliance mark for device class M shall be a "C" as required in MIL-PRF-38535, appendix

3.6 Certificate of compliance. For device classes Q, T and V, a certificate of compliance shall be required from a

QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a

certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-

HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of

supply for this drawing shall affirm that the manufacturer's product meets, for device classes Q, T and V, the requirements of

MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein.

3.7 Certificate of conformance. A certificate of conformance as required for device classes Q, T and V in MIL-PRF-38535 or

for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing.

3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2

herein) involving devices acquired to this drawing is required for any change as defined in MIL-PRF-38535, appendix A.

3.9 Verification and review for device class M. For device class M, DSCC, DSCC's agent, and the acquiring activity retain

the option to review the manufacturer's facility and applicable required documentation. Offshore documentation shall be made

available onshore at the option of the reviewer.

3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in

microcircuit group number 91 (see MIL-PRF-38535, appendix A).

STANDARD

MICROCIRCUIT DRAWING

DEFENSE SUPPLY CENTER COLUMBUS

COLUMBUS, OHIO 43216-5000

DSCC FORM 2234

APR 97

SIZE

REVISION LEVEL

5962-99536

SHEET

5962F9953601VXC Related Products

	5962F9953601VXC	5962R9953601TXC	5962F9953601V9A	5962F9953602V9A	5962F9953602VXC	5962F9953602QXC
Description	1A HALF BRDG BASED MOSFET DRIVER, CDFP16, CERAMIC, DFP-16	0.6A HALF BRDG BASED MOSFET DRIVER, CDFP16, CERAMIC, FP-16	0.6A HALF BRDG BASED MOSFET DRIVER, UUC, DIE	0.9A HALF BRDG BASED MOSFET DRIVER, CDFP16, CERAMIC, DFP-16	0.9A HALF BRDG BASED MOSFET DRIVER, CDFP16, CERAMIC, DFP-16	0.9A HALF BRDG BASED MOSFET DRIVER, CDFP16, CERAMIC, DFP-16
Parts packaging code	DFP	DFP	DIE	DFP	DFP	DFP
package instruction	DFP, FL16,.3	DFP, FL16,.3	DIE, DIE OR CHIP	DFP, DIE OR CHIP	DFP, FL16,.3	DFP, FL16,.3
Reach Compliance Code	not_compliant	unknown	unknown	compliant	compliant	compliant
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
high side driver	YES	YES	YES	YES	YES	YES
Interface integrated circuit type	HALF BRIDGE BASED MOSFET DRIVER	HALF BRIDGE BASED MOSFET DRIVER	HALF BRIDGE BASED MOSFET DRIVER	HALF BRIDGE BASED MOSFET DRIVER	HALF BRIDGE BASED MOSFET DRIVER	HALF BRIDGE BASED MOSFET DRIVER
JESD-30 code	R-CDFP-F16	R-CDFP-F16	R-XUUC-N	R-CDFP-F16	R-CDFP-F16	R-CDFP-F16
Number of functions	1	1	1	1	1	1
Maximum operating temperature	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C
Minimum operating temperature	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C
Nominal output peak current	1 A	0.6 A	0.6 A	0.9 A	0.9 A	0.9 A
Package body material	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	UNSPECIFIED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED
encapsulated code	DFP	DFP	DIE	DFP	DFP	DFP
Encapsulate equivalent code	FL16,.3	FL16,.3	DIE OR CHIP	DIE OR CHIP	FL16,.3	FL16,.3
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	FLATPACK	FLATPACK	UNCASED CHIP	FLATPACK	FLATPACK	FLATPACK
power supply	15 V	15 V	15 V	15 V	15 V	15 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Filter level	MIL-PRF-38535 Class V	MIL-PRF-38535 Class T	MIL-PRF-38535 Class V	MIL-PRF-38535 Class V	MIL-PRF-38535 Class V	MIL-PRF-38535 Class Q
Maximum supply voltage	20 V	20 V	20 V	20 V	20 V	20 V
Minimum supply voltage	12 V	12 V	12 V	12 V	12 V	12 V
Nominal supply voltage	15 V	15 V	15 V	15 V	15 V	15 V
surface mount	YES	YES	YES	YES	YES	YES
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	MILITARY	MILITARY	MILITARY	MILITARY	MILITARY	MILITARY
Terminal form	FLAT	FLAT	NO LEAD	FLAT	FLAT	FLAT
Terminal location	DUAL	DUAL	UPPER	DUAL	DUAL	DUAL
total dose	300k Rad(Si) V	100k Rad(Si) V	300k Rad(Si) V	300k Rad(Si) V	300k Rad(Si) V	300k Rad(Si) V
Maker	Renesas Electronics Corporation	-	Renesas Electronics Corporation	Renesas Electronics Corporation	-	Renesas Electronics Corporation
Contacts	16	16	-	16	16	16
JESD-609 code	e0	e4	e0	-	e4	e4
Number of terminals	16	16	-	16	16	16
Terminal surface	Tin/Lead (Sn/Pb)	GOLD	TIN LEAD	-	GOLD	Gold (Au)
Terminal pitch	1.27 mm	1.27 mm	-	-	1.27 mm	1.27 mm
Disconnect time	-	0.42 µs	0.42 µs	0.42 µs	0.42 µs	0.42 µs
connection time	-	0.36 µs	0.36 µs	0.425 µs	0.425 µs	0.425 µs
Base Number Matches	-	1	1	1	1	-

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