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BC307/308/309
BC307/308/309
Switching and Amplifier Applications
• Low Noise: BC309
1
TO-92
1. Collector 2. Base 3. Emitter
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25°C unless otherwise noted
Symbol
V
CES
Parameter
Collector-Emitter Voltage
: BC307
: BC308/309
Collector-Emitter Voltage
: BC307
: BC308/309
Emitter-Base Voltage
Collector Current (DC)
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
-50
-30
-45
-25
-5
-100
500
150
-55 ~ 150
Units
V
V
V
V
V
mA
mW
°C
°C
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
©2002 Fairchild Semiconductor Corporation
Rev. A2, August 2002
BC307/308/309
Electrical Characteristics
T
a
=25°C unless otherwise noted
Symbol
BV
CEO
Parameter
Collector-Emitter Breakdown Voltage
: BC307
: BC308/309
Collector-Emitter Breakdown Voltage
: BC307
: BC308/309
Emitter-Base Breakdown Voltage
Collector Cut-off Current
: BC307
: BC308/309
DC Current Gain
Collector-Emitter Saturation Voltage
Collector-Base Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
Input Capacitance
Noise Figure
: BC307/308
: BC309
: BC309
V
CE
= -5V, I
C
= -0.2mA,
R
G
=2KΩ, f=1KHz
V
CE
= -5V, I
C
= -0.2mA
R
G
=2KΩ, f=30~15KHz
10
4
4
dB
dB
dB
Test Condition
I
C
= -2mA, I
B
=0
Min.
-45
-25
I
C
= -10µA, V
BE
=0
-50
-30
I
E
= -10µA, I
C
=0
V
CE
= -45V, V
BE
=0
V
CE
= -25V, V
BE
=0
V
CE
= -5V, I
C
= -2mA
I
C
= -10mA, I
B
= -0.5mA
I
C
= -100mA, I
B
= -5mA
I
C
= -10mA, I
B
= -0.5mA
I
C
= -100mA, I
B
= -5mA
V
CE
= -5V, I
C
= -2mA
V
CE
= -5V, I
C
= -10mA, f=50MHz
V
CB
= -10V, I
E
=0, f=1MHz
V
EB
= -0.5V, I
C
=0, f=1MHz
12
-0.55
120
-0.5
-0.7
-0.85
-0.62
130
6
-0.7
-5
-2
-2
-15
-15
800
-0.3
V
V
V
V
V
MHz
pF
pF
V
V
V
nA
nA
Typ.
Max.
Units
V
V
BV
CES
BV
EBO
I
CES
h
FE
V
CE
(sat)
V
BE
(sat)
V
BE
(on)
f
T
C
ob
C
ib
NF
2
h
FE
Classification
Classification
h
FE
A
120 ~ 220
B
180 ~ 460
C
380 ~ 800
©2002 Fairchild Semiconductor Corporation
Rev. A2, August 2002
BC307/308/309
Typical Characteristics
-50
-45
1000
I
B
= -400
µ
A
I
B
= -350
µ
A
V
CE
= -5V
I
C
[mA], COLLECTOR CURRENT
-40
-35
-30
-25
-20
-15
-10
-5
h
FE
, DC CURRENT GAIN
I
B
= -300
µ
A
I
B
= -250
µ
A
I
B
= -200
µ
A
I
B
= -150
µ
A
I
B
= -100
µ
A
I
B
= -50
µ
A
100
10
-2
-4
-6
-8
-10
-12
-14
-16
-18
-20
1
-0.1
-1
-10
-100
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
I
C
[mA], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
V
BE
(sat), V
CE
(sat)[V], SATURATION VOLTAGE
-10
-100
-1
V
BE
(sat)
I
C
[mA], COLLECTOR CURRENT
I
C
= -10 I
B
V
CE
= -5V
-10
-0.1
-1
V
CE
(sat)
-0.01
-0.1
-1
-10
-100
-0.1
-0.0
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
I
C
[mA], COLLECTOR CURRENT
V
BE
[V], BASE-EMITTER VOLTAGE
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter Capacitance
f
T
[MHz], CURRENT GAIN-BANDWIDTH PRODUCT
1000
f=1MHz
I
E
= 0
V
CE
= -5V
C
ob
[pF], CAPACITANCE
10
100
1
-1
-10
-100
10
-1
-10
V
CB
[V], COLLECTOR-BASE VOLTAGE
I
C
[mA], COLLECTOR CURRENT
Figure 5. Collector Output Capacitance
Figure 6. Current Gain Bandwidth Product
©2002 Fairchild Semiconductor Corporation
Rev. A2, August 2002
BC307/308/309
Package Dimensions
TO-92
4.58
–0.15
+0.25
0.46
14.47
±0.40
±0.10
4.58
±0.20
1.27TYP
[1.27
±0.20
]
3.60
±0.20
1.27TYP
[1.27
±0.20
]
0.38
–0.05
+0.10
3.86MAX
1.02
±0.10
0.38
–0.05
+0.10
(R2.29)
(0.25)
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation
Rev. A2, August 2002
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