ZVN4210A datasheet, PDF - EEWORLD Datasheet

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ZVN4210A: Description450 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET; Categorysemiconductor Discrete semiconductor; File Size68KB，2 Pages; ManufacturerFairchild; Websitehttp://www.fairchildsemi.com/

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ZVN4210A Overview

450 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET

ZVN4210A Parametric

Parameter Name	Attribute value
Number of terminals	3
Minimum breakdown voltage	100 V
Processing package description	TO-92 COMPATIBLE, E-LINE PACKAGE-3
Lead-free	Yes
EU RoHS regulations	Yes
state	DISCONTINUED
packaging shape	round
Package Size	cylindrical
Terminal form	Wire
terminal coating	MATTE Tin
Terminal location	BOTTOM
Packaging Materials	Plastic/Epoxy
structure	single
Number of components	1
transistor applications	switch
Transistor component materials	silicon
Maximum ambient power consumption	0.7000 W
Channel type	N channel
field effect transistor technology	Metal-OXIDE SEMICONDUCTOR
operating mode	ENHANCEMENT
Transistor type	Universal small signal
Maximum leakage current	0.4500 A
feedback capacitor	12 pF
Maximum drain on-resistance	1.5 ohm

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N-CHANNEL ENHANCEMENT

MODE VERTICAL DMOS FET

ISSUE 2 – MARCH 94

FEATURES

* 100 Volt V

* R

DS(on)

= 1.5Ω

* Spice model available

ZVN4210A

E-Line

TO92 Compatible

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Drain-Source Voltage

Continuous Drain Current at T

amb

=25°C

Pulsed Drain Current

Gate-Source Voltage

Power Dissipation at T

amb

=25°C

Operating and Storage Temperature Range

SYMBOL

tot

stg

VALUE

100

450

700

-55 to +150

UNIT

°C

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated).

PARAMETER

Drain-Source Breakdown

Voltage

Gate-Source Threshold

Voltage

Gate-Body Leakage

Zero Gate Voltage Drain

Current

On-State Drain Current(1)

Static Drain-Source On-State

Resistance (1)

SYMBOL MIN.

DSS

GS(th)

GSS

DSS

D(on)

DS(on)

250

100

2.5

1.5

1.8

100

0.8

2.4

100

MAX. UNIT CONDITIONS.

µA

Ω

≈25V,

=1.5A

=25V, V

=0V, f=1MHz

=1mA, V

=0V

ID=1mA, V

= V

=± 20V, V

=0V

=100V, V

=80V, V

=0V, T=125°C

(2)

=25V, V

=10V

=10V,I

=1.5A

=5V,I

=500mA

=25V,I

=1.5A

Forward Transconductance(1)(2 g

)

Input Capacitance (2)

Common Source Output

Capacitance (2)

Reverse Transfer Capacitance

(2)

Turn-On Delay Time (2)(3)

Rise Time (2)(3)

Turn-Off Delay Time (2)(3)

Fall Time (2)(3)

iss

oss

rss

d(on)

d(off)

3-388

ZVN4210A Related Products

	ZVN4210A	ZVN4210ASTZ
Description	450 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET	450 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
Number of terminals	3	3
Minimum breakdown voltage	100 V	100 V
Processing package description	TO-92 COMPATIBLE, E-LINE PACKAGE-3	TO-92 COMPATIBLE, E-LINE PACKAGE-3
Lead-free	Yes	Yes
EU RoHS regulations	Yes	Yes
state	DISCONTINUED	TRANSFERRED
packaging shape	round	Rectangle
Package Size	cylindrical	IN-line
Terminal form	Wire	Wire
terminal coating	MATTE Tin	MATTE Tin
Terminal location	BOTTOM	single
Packaging Materials	Plastic/Epoxy	Plastic/Epoxy
structure	single	single
Number of components	1	1
transistor applications	switch	switch
Transistor component materials	silicon	silicon
Maximum ambient power consumption	0.7000 W	1 W
Channel type	N channel	N channel
field effect transistor technology	Metal-OXIDE SEMICONDUCTOR	Metal-OXIDE SEMICONDUCTOR
operating mode	ENHANCEMENT	ENHANCEMENT
Transistor type	Universal small signal	Universal small signal
Maximum leakage current	0.4500 A	0.4500 A
Maximum drain on-resistance	1.5 ohm	1.8 ohm

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