BC857ALEADFREE datasheet, PDF - EEWORLD Datasheet

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BC857ALEADFREE: DescriptionSmall Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3; CategoryDiscrete semiconductor The transistor; File Size325KB，2 Pages; ManufacturerCentral Semiconductor; Environmental Compliance

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BC857ALEADFREE Overview

Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3

BC857ALEADFREE Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Central Semiconductor
package instruction	SMALL OUTLINE, R-PDSO-G3
Contacts	3
Reach Compliance Code	compliant
ECCN code	EAR99
Other features	LOW NOISE
Maximum collector current (IC)	0.1 A
Collector-emitter maximum voltage	45 V
Configuration	SINGLE
Minimum DC current gain (hFE)	125
JESD-30 code	R-PDSO-G3
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	PNP
Certification status	Not Qualified
surface mount	YES
Terminal surface	Matte Tin (Sn)
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	10
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	100 MHz

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BC856 SERIES

BC857 SERIES

BC858 SERIES

SURFACE MOUNT

PNP SILICON TRANSISTOR

w w w. c e n t r a l s e m i . c o m

DESCRIPTION:

The CENTRAL SEMICONDUCTOR BC856, BC857

and BC858 Series types are PNP Silicon Transistors

manufactured by the epitaxial planar process, epoxy

molded in a surface mount package, designed for

general purpose switching and amplifier applications.

MARKING CODE: SEE MARKING CODE TABLE

ON FOLLOWING PAGE

SOT-23 CASE

MAXIMUM RATINGS:

(TA=25°C)

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Peak Collector Current

Peak Base Current

Power Dissipation

Operating and Storage Junction Temperature

Thermal Resistance

ELECTRICAL

SYMBOL

ICBO

IEBO

BVCBO

BVCEO

BVEBO

VCE(SAT)

VBE(ON)

Note: Reverse Lead Codes Available, Add “R” to the end of

the Part # and Marking Code.

SYMBOL

VCBO

VCEO

VEBO

ICM

IBM

TJ, Tstg

BC858

BC857

BC856

5.0

100

200

350

-65 to +150

357

MAX

4.0

100

UNITS

°C

°C/W

UNITS

μA

MHz

BC857C

BC858C

MIN MAX

420

800

CHARACTERISTICS:

(TA=25°C unless

TEST CONDITIONS

VCB=30V

VCB=30V, TA=150°C

VEB=5.0V

IC=10μA (BC858)

IC=10μA (BC857)

IC=10μA (BC856)

IC=10mA (BC858)

IC=10mA (BC857)

IC=10mA (BC856)

IE=10μA

IC=10mA, IB=0.5mA

IC=100mA, IB=5.0mA

IC=2.0mA, VCE=5.0V

IC=10mA, VCE=5.0V

VCE=5.0V, IC=10mA, f=100MHz

VCE=5.0V, IC=200μA,

RS=2.0KΩ, f=1.0KHz, BW=200Hz

otherwise noted)

MIN

5.0

0.30

0.65

0.75

0.82

0.6

100

BC856A

BC857A

BC858A

MIN MAX

125 250

BC856B

BC857B

BC858B

MIN MAX

220 475

hFE

VCE=5.0V, IC=2.0mA

R2 (20-November 2009)

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