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Datasheet> All Categories > Discrete semiconductor> The transistor> BCP52TA
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BCP52TA

Description
Power Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin, GREEN, PLASTIC PACKAGE-4
CategoryDiscrete semiconductor    The transistor   
File Size349KB，7 Pages
ManufacturerDiodes Incorporated
Environmental Compliance  
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BCP52TA Overview

Power Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin, GREEN, PLASTIC PACKAGE-4

BCP52TA Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerDiodes Incorporated
package instructionSOT-223, 4 PIN
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time15 weeks
Other featuresHIGH RELIABILITY
Shell connectionCOLLECTOR
Maximum collector current (IC)1 A
Collector-based maximum capacity25 pF
Collector-emitter maximum voltage60 V
ConfigurationSINGLE
Minimum DC current gain (hFE)25
JESD-30 codeR-PDSO-G4
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals4
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typePNP
Maximum power dissipation(Abs)2 W
Certification statusNot Qualified
GuidelineAEC-Q101
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)150 MHz
VCEsat-Max0.5 V

BCP52TA Preview

BCP 51/ 52/ 53
PNP MEDIUM POWER TRANSISTORS IN SOT223
Features
BV
CEO
> -45V, -60V & -80V
I
C
= -1A High Continuous Collector Current
I
CM
= -2A Peak Pulse Current
2W Power Dissipation
Low Saturation Voltage V
CE(sat)
< -500mV @ -0.5A
Gain Groups 10 and 16
Complementary NPN Types: BCP54, 55 and 56
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Mechanical Data
Case: SOT223
Case Material: Molded Plastic. “Green” Molding Compound;
UL Flammability Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - Matte Tin Plated Leads; Solderable per
MIL-STD-202, Method 208
Weight: 0.112 grams (Approximate)
Applications
Medium Power Switching or Amplification Applications
AF Driver and Output Stages
SOT223
C
B
E
Top View
Device Symbol
Top View
Pin-Out
Ordering Information
(Notes 4 & 5)
Product
BCP51TA
BCP5110TA
BCP5116TA
BCP5116TC
BCP52TA
BCP5210TA
BCP5216TA
BCP53TA
BCP53QTA
BCP5310TA
BCP5316TA
BCP5316QTA
BCP5316TC
Notes:
Compliance
AEC-Q101
AEC-Q101
AEC-Q101
AEC-Q101
AEC-Q101
AEC-Q101
AEC-Q101
AEC-Q101
Automotive
AEC-Q101
AEC-Q101
Automotive
AEC-Q101
Marking
BCP 51
BCP 5110
BCP 5116
BCP 5116
BCP 52
BCP 5210
BCP 5216
BCP 53
BCP 53
BCP 5310
BCP 5316
BCP 5316
Reel size (inches)
7
7
7
13
7
7
7
7
7
7
7
13
Tape width (mm)
12
12
12
12
12
12
12
12
12
12
12
12
Quantity per reel
1,000
1,000
1,000
4,000
1,000
1,000
1,000
1,000
1,000
1,000
1,000
4,000
Refer to http://diodes.com/datasheets/BCP5316Q.pdf
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally
the same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_compliance_definitions/.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
SOT223
BCP = Product Type Marking Code, Line 1
XXXX = Product Type Marking Code, Line 2 as follows:
BCP
XXXX
YWW
BCP51 = 51
BCP5110 = 5110
BCP5116 = 5116
BCP52 = 52
BCP5210 = 5210
BCP5216 = 5216
BCP53 = 53
BCP5310 = 5310
BCP5316 = 5316
YWW = Date Code Marking
Y or Y = Last Digit of Year (ex: 5= 2015)
WW or WW = Week Code (01~53)
BCP 51 / 52 / 53
Datasheet Number: DS35366 Rev. 6 - 2
1 of 7
www.diodes.com
March 2015
© Diodes Incorporated
BCP 51/ 52/ 53
Absolute Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Collector Current
Continuous Base Current
Peak Pulse Base Current
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
BCP51
-45
-45
BCP52
-60
-60
-5
-1
-2
-100
-200
BCP53
-100
-80
Unit
V
V
V
A
mA
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Power Dissipation
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Leads
Operating and Storage Temperature Range
(Note 6)
(Note 6)
(Note 7)
Symbol
P
D
R
θJA
R
θJL
T
J,
T
STG
Value
2
62
19.4
-65 to +150
Unit
W
°C/W
°C/W
°C
ESD Ratings
(Note 8)
Characteristic
Electrostatic Discharge - Human Body Model
Electrostatic Discharge - Machine Model
Notes:
Symbol
ESD HBM
ESD MM
Value
4,000
400
Unit
V
V
JEDEC Class
3A
C
6. For a device mounted with the collector lead on 50mm x 50mm 1oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under still air
conditions whilst operating in steady-state.
7. Thermal resistance from junction to solder-point (at the end of the collector lead).
8. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
BCP 51 / 52 / 53
Datasheet Number: DS35366 Rev. 6 - 2
2 of 7
www.diodes.com
March 2015
© Diodes Incorporated
BCP 51/ 52/ 53
Thermal Characteristics and Derating Information
Thermal Resistance (°C/W)
160
60
50
40
30
20
10
0
100µ
1m
10m 100m
1
D=0.2
Single Pulse
D=0.05
D=0.1
Maximum Power (W)
50mm x 50mm 1oz Cu
T
amb
=
25°C
140
120
100
80
60
40
20
0
100µ
1m
10m 100m
50mm x 50mm 1oz Cu
T
amb
=
25°C
Single pulse
D=0.5
10
100
1k
1
10
100
1k
Pulse Width (s)
Pulse Width (s)
Transient Thermal Impedance
Max Power Dissipation (W)
2.0
1.5
1.0
0.5
0.0
50mm x 50mm
1oz Cu
Pulse Power Dissipation
0
20
40
60
80
100 120 140 160
Temperature (°C)
Derating Curve
BCP 51 / 52 / 53
Datasheet Number: DS35366 Rev. 6 - 2
3 of 7
www.diodes.com
March 2015
© Diodes Incorporated
BCP 51/ 52/ 53
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage (Note 9)
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
All Versions
Static Forward Current Transfer Ratio (Note 9)
10 gain grp
16 gain grp
Collector-Emitter Saturation Voltage (Note 9)
Base-Emitter Turn-On Voltage (Note 9)
Transition Frequency
Output Capacitance
Note:
Symbol
BCP51
BCP52
BCP53
BCP51
BCP52
BCP53
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
Min
-45
-60
-100
-45
-60
-80
-5
—
—
25
40
25
63
100
—
—
150
—
Typ
—
Max
—
Unit
V
Test Condition
I
C
= -100µA
—
—
—
—
—
—
—
—
—
-0.1
-20
-20
—
V
V
μA
nA
I
C
= -10mA
I
E
= -10µA
V
CB
= -30V
V
CB
= -30V, T
A
= +150°C
V
EB
= -4V
I
C
= -5mA, V
CE
= -2V
I
C
= -150mA, V
CE
= -2V
I
C
= -500mA, V
CE
= -2V
I
C
= -150mA, V
CE
= -2V
I
C
= -150mA, V
CE
= -2V
I
C
= -500mA, I
B
= -50mA
I
C
= -500mA, V
CE
= -2V
I
C
= -50mA, V
CE
= -10V
f = 100MHz
V
CB
= -10V, f = 1MHz
250
—
h
FE
—
V
CE(sat)
V
BE(on)
f
T
C
obo
—
—
—
—
—
—
160
250
-0.5
-1.0
—
25
V
V
MHz
pF
9. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
1.0
I
B
= 10mA
500
V
CE
= -5V
I
C
, COLLECTOR CURRENT (A)
0.8
I
B
= 8mA
400
h
FE
, DC CURRENT GAIN
I
B
= 6mA
T
A
= 150°C
0.6
I
B
= 4mA
300
T
A
= 85°C
0.4
I
B
= 2mA
200
T
A
= 25°C
0.2
100
T
A
= -55°C
0
0
1
2
3
4
5
-V
CE
, COLLECTOR-EMITTER VOLTAGE (V)
Fig. 1 Typical Collector Current
vs. Collector-Emitter Voltage
0
0.001
0.01
0.1
1
10
-I
C
, COLLECTOR CURRENT (A)
Fig. 2 Typical DC Current Gain vs. Collector Current
BCP 51 / 52 / 53
Datasheet Number: DS35366 Rev. 6 - 2
4 of 7
www.diodes.com
March 2015
© Diodes Incorporated
BCP 51/ 52/ 53
-V
BE(ON)
, BASE-EMITTER TURN-ON VOLTAGE (V)
0.5
1.0
-V
CE(SAT)
, COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
0.4
0.8
T
A
= -55°C
0.3
T
A
= 150°C
0.6
T
A
= 25°C
T
A
= 85°C
0.4
0.2
T
A
= 85°C
T
A
= 150°C
0.2
V
CE
= -2V
0.1
T
A
= 25°C
T
A
= -55°C
0
0.001
0.01
0.1
1
-I
C
, COLLECTOR CURRENT(A)
Fig 3 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
10
0
0.001
0.01
0.1
1
10
-I
C
, COLLECTOR CURRENT (A)
Fig. 4 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
-V
BE(SAT)
, BASE-EMITTER SATURATION VOLTAGE (V)
1.2
300
f
T
, GAIN-BANDWIDTH PRODUCT (MHz)
1.0
250
0.8
T
A
= -55°C
200
0.6
T
A
= 25°C
T
A
= 85°C
150
0.4
T
A
= 150°C
100
V
CE
= -5V
f = 100MHz
0.2
I
C
/ I
B
= 10
50
0
0.001
0
20
40
60
80
100
-I
C
, COLLECTOR CURRENT (mA)
Fig. 6 Typical Gain-Bandwidth Product vs. Collector Current
0
0.01
0.1
1
10
-I
C
, COLLECTOR CURRENT (A)
Fig. 5 Typical Base-Emitter Saturation Voltage
vs. Collector Current
160
140
120
f = 1MHz
CAPACITANCE(pF)
100
80
C
ibo
60
40
20
C
obo
0
0
10
20
30
40
V
R
, REVERSE VOLTAGE (V)
Fig. 7 Typical Capacitance Characteristics
BCP 51 / 52 / 53
Datasheet Number: DS35366 Rev. 6 - 2
5 of 7
www.diodes.com
March 2015
© Diodes Incorporated
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