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BC847BW-TP-HF

Description
Small Signal Bipolar Transistor,
CategoryDiscrete semiconductor    The transistor   
File Size709KB,5 Pages
ManufacturerMicro Commercial Components (MCC)
Environmental Compliance
Download Datasheet Parametric View All

BC847BW-TP-HF Overview

Small Signal Bipolar Transistor,

BC847BW-TP-HF Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerMicro Commercial Components (MCC)
package instructionSMALL OUTLINE, R-PDSO-G3
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage45 V
ConfigurationSINGLE
Minimum DC current gain (hFE)200
JESD-30 codeR-PDSO-G3
Humidity sensitivity level1
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature10
Transistor component materialsSILICON
Nominal transition frequency (fT)100 MHz
MCC
Micro Commercial Components
  omponents
20736 Marilla
Street Chatsworth

  !"#
$ %    !"#
BC846AW/BW
BC847AW/BW/CW
BC848AW/BW/CW
NPN
General Purpose
Transistors
SOT-323
A
D
Features
Finish/RoHS Compliant ("P" Suffix designates
Lead Free
RoHS Compliant. See ordering information)
Low current (max. 100mA)
Low voltage (max. 65V)
Epoxy meets UL 94 V-0 flammability rating
Moisure Sensitivity Level 1
Halogen
free available upon request by adding suffix "-HF"
Operating temperature : -65 to +150
Storage temperature : -65 to +150
Thermal resistance from junction to ambient*: 625K/W
Marking: BC846AW---1A ; BC846BW---1B
BC847AW---1E ; BC847BW---1F ; BC847CW---1G
BC848AW---1JS/1J ; BC848BW---1KS/1K ; BC848CW---1LS/1L
Maximum Ratings
C
B
C
Electrical Characteristics @ 25
Symbol
Parameter
Unless Otherwise Specified
Min
Max
Units
B
F
E
E
OFF CHARACTERISTICS
V
(BR)CBO
Collector-Base Breakdown Voltage
(I
C
=10uAdc, I
E
=0)
BC846AW/BW
BC847AW/BW/CW
BC848AW/BW/CW
Collector-Emitter Breakdown Voltage
(I
C
=10mAdc, I
B
=0)
BC846AW/BW
BC847AW/BW/CW
BC848AW/BW/CW
Emitter-Base Breakdown Voltage
(I
E
=1µAdc, I
C
=0)
BC846AW/BW, BC847AW/BW/CW
BC848AW/BW/CW
Collector Current (DC)
Peak Collector Current
Peak Base Current
Vdc
G
H
J
---
---
---
80
50
30
Vdc
K
DIMENSIONS
INCHES
MIN
MAX
.071
.087
.045
.053
.083
.096
.026 Nominal
.047
.055
.012
.016
.000
.004
.035
.039
.004
.010
.006
.016
MM
MIN
MAX
1.80
2.20
1.15
1.35
2.10
2.45
0.65Nominal
1.20
1.40
.30
.40
.000
.100
.90
1.00
.100
.250
.15
.40
V
(BR)CEO
---
---
---
65
45
30
Vdc
V
(BR)EBO
I
C
I
CM
I
BM
---
---
---
---
---
6
5
100
200
200
mAdc
mAdc
mAdc
DIM
A
B
C
D
E
F
G
H
J
K
NOTE
* Transistor mounted on an FR4 printed-circuit board
Suggested Solder
Pad Layout
0.70
0.90
1.90
inches
mm
0.65
0.65
Revision: C
www.mccsemi.com
1 of
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2013/09/24
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