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BC849C-TP

Description
Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-3
CategoryDiscrete semiconductor    The transistor   
File Size604KB,4 Pages
ManufacturerMicro Commercial Components (MCC)
Environmental Compliance  
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BC849C-TP Overview

Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-3

BC849C-TP Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerMicro Commercial Components (MCC)
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage30 V
ConfigurationSINGLE
Minimum DC current gain (hFE)420
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.225 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature10
Transistor component materialsSILICON
Nominal transition frequency (fT)100 MHz
MCC
Features
TM
Micro Commercial Components
  omponents
20736 Marilla
Street Chatsworth

  !"#
$ %    !"#
BC846A
THRU
BC849C
NPN
Plastic-Encapsulate
Transistors
SOT-23
A
D
Maximum Ratings
DEVICE MARKING
Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
Power Dissipation: 0.225W (T
amb
=25 )(Note 1)
Collector Current: 0.1A
Epoxy meets UL 94 V-0 flammability rating
Moisure Sensitivity Level 1
Halogen
free available upon request by adding suffix "-HF"
Operating temperature : -55
Storage temperature : -55
to +150
to +150
BC846A=1A,46A; BC846B=1B,46B;
BC847A=1E,47A; BC847B=1F,47B; BC847C=1G,47C;
BC848A=1J,48A; BC848B=1K,48B: BC848C=1L,48C
BC849B=49B; BC849C=49C;
C
B
C
Electrical Characteristics @ 25
Symbol
Parameter
Unless Otherwise Specified
Min
Max
Units
G
B
F
E
E
OFF CHARACTERISTICS
V
(BR)CBO
H
K
J
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
H
FE(1)
V
CE(sat)
V
BE(sat)
f
T
Collector-Base Breakdown Voltage
(I
C
=10µAdc, I
E
=0)
BC846
BC847
BC848, BC849
Collector-Emitter Breakdown Voltage
(I
C
=10mAdc, I
B
=0)
BC846
BC847
BC848,
BC849
Collector-Emitter Breakdown Voltage
(I
E
=10
µAdc,
I
C
=0)
Collector Cut-off Current
BC846 (V
CB
=70V, I
E
=0)
BC847 (V
CB
=50V, I
E
=0)
BC848,
BC849 (V
CB
=30V, I
E
=0)
Collector Cut-off Current
BC846 (V
CE
=60V, I
B
=0)
BC847 (V
CE
=45V, I
B
=0)
BC848,
BC849 (V
CE
=30V, I
B
=0)
Emitter Cut-off Current
(V
EB
=5V, I
C
=0mA)
DC Current Gain(V
CE
=5V, I
C
=2mA)
BC846A, 847A, 848A
BC846B, 847B, 848B ,849B
BC847C, BC848C ,BC849C
Collector-Emitter Saturation Voltage
(I
C
=100mA, I
B
=5mA)
Base-Emitter Saturation Voltage
(I
C
=100mA, I
B
=5mA)
Transition Frequency
(V
CE
=5V, I
C
=10mA, f=100MHz)
Vdc
80
50
30
---
---
---
DIMENSIONS
Vdc
65
45
30
---
---
---
Vdc
6
---
---
0.1
µAdc
DIM
A
B
C
D
E
F
G
H
J
K
INCHES
MIN
.110
.083
.047
.035
.070
.018
.0005
.035
.003
.015
MM
MAX
.120
.104
.055
.041
.081
.024
.0039
.044
.007
.020
MIN
2.80
2.10
1.20
.89
1.78
.45
.013
.89
.085
.37
MAX
3.04
2.64
1.40
1.03
2.05
.60
.100
1.12
.180
.51
NOTE
---
0.1
µAdc
Suggested Solder
Pad Layout
.031
.800
.035
.900
---
0.1
µAdc
110
200
420
---
220
450
800
0.5
.079
2.000
inches
mm
Vdc
---
1.1
Vdc
.037
.950
.037
.950
100
---
MHz
Note 1: Transistor mounted on an FR4 printed-circuit board
Revision:
D
www.mccsemi.com
1 of
4
2015/10/20

BC849C-TP Related Products

BC849C-TP BC848B-TP BC847C-TP BC848C-TP
Description Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-3 Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-3 Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-3 Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-3
Is it lead-free? Lead free Lead free Lead free Lead free
Is it Rohs certified? conform to conform to conform to conform to
package instruction SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
Contacts 3 3 3 3
Reach Compliance Code compliant compliant compliant compliant
ECCN code EAR99 EAR99 EAR99 EAR99
Maximum collector current (IC) 0.1 A 0.1 A 0.1 A 0.1 A
Collector-emitter maximum voltage 30 V 30 V 45 V 30 V
Configuration SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 420 200 420 420
JESD-30 code R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
JESD-609 code e3 e3 e3 e3
Humidity sensitivity level 1 1 1 1
Number of components 1 1 1 1
Number of terminals 3 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 260 260 260
Polarity/channel type NPN NPN NPN NPN
Maximum power dissipation(Abs) 0.225 W 0.225 W 0.225 W 0.225 W
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
surface mount YES YES YES YES
Terminal surface Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn)
Terminal form GULL WING GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL DUAL
Maximum time at peak reflow temperature 10 10 10 10
Transistor component materials SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 100 MHz 100 MHz 100 MHz 100 MHz
transistor applications - SWITCHING SWITCHING SWITCHING
Base Number Matches - 1 1 1
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