FCU10A20 datasheet, PDF - EEWORLD Datasheet

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FCU10A20: Description10 A, 200 V, SILICON, RECTIFIER DIODE; CategoryDiscrete semiconductor diode; File Size109KB，1 Pages; ManufacturerNihon Inter Electronics Corporation; Websitehttp://www.niec.co.jp

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FCU10A20 Overview

10 A, 200 V, SILICON, RECTIFIER DIODE

FCU10A20 Parametric

Parameter Name	Attribute value
Maker	Nihon Inter Electronics Corporation
package instruction	R-PSFM-T3
Reach Compliance Code	unknow
application	FAST RECOVERY
Configuration	COMMON CATHODE, 2 ELEMENTS
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
JESD-30 code	R-PSFM-T3
Maximum non-repetitive peak forward current	100 A
Number of components	2
Phase	1
Number of terminals	3
Maximum operating temperature	150 °C
Minimum operating temperature	-40 °C
Maximum output current	10 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	200 V
Maximum reverse recovery time	0.027 µs
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE

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10A Avg.

Item

くり返しピーク逆電圧

Repetitive Peak Reverse Voltage

平

均

整

流

電

流

Average Rectified Forward Current

実

効

順

電

流

R.M.S. Forward Current

サ

ー

ジ

順

電

流

Surge Forward Current

動 ½ 接合温度範囲

Operating Junction Temperature Range

保

存

温

度

範

囲

Storage Temperature Range

締

付

ト

ル

ク

Mounting torque

200 Volts

Symbol

RRM

F(RMS)

FSM

stg

tor

100

50Hz、正弦全波通電抵抗負荷

50Hz Full Sine Wave Resistive Load

FRED

Conditions

200

Tc＝116℃

11.1

50Hz正弦全波，１サイクル，非くり返し

50Hz Full Sine Wave,1cycle, Non-repetitive

FCU10A20

■OUTLINE DRAWING(mm)

Unit

℃

0.5

N½m

■最大定格 Maximum Ratings

−40∼＋150

推奨値

Recommended Value

■電気的・熱的特性 Electrical/ Thermal Characteristics

Item

ピ

ー

ク

逆

電

Peak Reverse Current

ピ

ー

ク

順

電

Peak Forward Voltage

逆

回

復

時

Reverse Recovery Time

熱

抵

Thermal Resistance

流

圧

間

■APPROX. NET WEIGHT:0.17 g

Symbol

t rr

th(j-c)

th(c-f)

Conditions

＝25℃, V

＝V

RRM

一素子あたり

Per Diode

＝25℃, I

＝5A,

一素子あたり

Per Diode

＝5A, -di/dt＝50 A/μs, T

＝25℃

接合部½ケース間

Junction to Case

ケース½フィン間

Case to Fin

Min.

−

Typ.

−

0.91

−

Max.

1.10

1.5

Unit

μA

℃/W

抗

■定格・特性曲線

FIG.1

FIG.2

CONDUCTION ANGLE

FIG.3

CONDUCTION ANGLE

順電圧特性

FORWARD CURRENT VS. VOLTAGE

FCU10A20

通流角

180

平均順電力損失特性

AVERAGE FORWARD POWER DISSIPATION

FCU10A20

RECT 180

SINE WAVE

通流角

180

平均順電流 − ケース温度定格

AVERAGE FORWARD CURRENT VS. CASE TEMPERATURE

FCU10A20

RECT 180

INSTANTANEOUS FORWARD CURRENT (A)

AVERAGE FORWARD POWER DISSIPATION (W)

平

均

SINE WAVE

瞬

時

順

電

流

（Ａ）

AVERAGE FORWARD CURRENT (A)

平

順

電

均

順

電

力

損

Tj=25

Tj=150

流

（Ａ）

失

（Ｗ）

0.5

0.4

0.8

1.2

1.6

100

125

150

INSTANTANEOUS FORWARD VOLTAGE (V)

AVERAGE FORWARD CURRENT (A)

CASE TEMPERATURE (

瞬時順電圧（Ｖ）

平均順電流（Ａ）

ケース温度（℃）

FIG.4

サージ順電流定格

SURGE CURRENT RATINGS

f=50Hz,Sine Wave,Non-Repetitive,No Load

FCU10A20

1000

RMS SURGE CURRENT RATINGS

Ta=40

C,Non-Repetitive,No Load

サージ実効順電流定格

FCU10A20

サ

ジ

順

電

流

（Ａ）

SURGE FORWARD CURRENT (A)

サ

ジ

実

効

順

電

流

（Ａrms）

RMS SURGE FORWARD CURRENT (Arms)

100

0.02s

FSM

0.02

0.05

0.1

0.2

0.5

0.1

TIME (s)

PULSE WIDTH (ms)

時間（½）

パルス幅（½½）

136

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