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BC817-25-13

Description
Small Signal Bipolar Transistor, 0.8A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3
CategoryDiscrete semiconductor    The transistor   
File Size67KB,3 Pages
ManufacturerDiodes Incorporated
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BC817-25-13 Overview

Small Signal Bipolar Transistor, 0.8A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3

BC817-25-13 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerDiodes Incorporated
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)0.8 A
Collector-emitter maximum voltage45 V
ConfigurationSINGLE
Minimum DC current gain (hFE)100
JESD-30 codeR-PDSO-G3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)235
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountYES
Terminal surfaceTIN LEAD
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature10
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)100 MHz
SPICE MODELS: BC817-16 BC817-25 BC817-40
BC817-16 / -25 / -40
NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR
Features
·
·
·
·
·
Ideally Suited for Automatic Insertion
Epitaxial Planar Die Construction
For Switching, AF Driver and Amplifier Applications
Complementary PNP Types Available (BC807)
Available in Lead Free/RoHS Compliant Version (Note 3)
A
C
B
C
SOT-23
Dim
A
B
C
D
B
TOP VIEW
E
E
D
G
H
Min
0.37
1.20
2.30
0.89
0.45
1.78
2.80
0.013
0.903
0.45
0.085
Max
0.51
1.40
2.50
1.03
0.60
2.05
3.00
0.10
1.10
0.61
0.180
Mechanical Data
·
·
·
·
·
·
·
·
·
Case: SOT-23
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Solderable per MIL-STD-202, Method 208
Also Available in Lead Free Plating (Matte Tin Finish
annealed over Alloy 42 leadframe). Please see Ordering
Information, Note 5, on Page 3
Pin Connections: See Diagram
Marking (See Page 3): BC817-16 K6A
BC817-25 K6B
BC817-40 K6C
Ordering & Date Code Information: See Page 3
Weight: 0.008 grams (approximate)
E
G
H
K
J
L
M
J
K
L
M
a
All Dimensions in mm
Maximum Ratings
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Peak Collector Current
Peak Emitter Current
@T
A
= 25°C unless otherwise specified
Symbol
V
CEO
V
EBO
I
C
I
CM
I
EM
P
d
R
qSB
R
qJA
T
j
, T
STG
Value
45
5.0
800
1000
1000
310
320
403
-65 to +150
Unit
V
V
mA
mA
mA
mW
°C/W
°C/W
°C
Characteristic
Power Dissipation at T
SB
= 50°C (Note 1)
Thermal Resistance, Junction to Substrate Backside (Note 1)
Thermal Resistance, Junction to Ambient Air (Note 1)
Operating and Storage Temperature Range
Electrical Characteristics
DC Current Gain
@T
A
= 25°C unless otherwise specified
Symbol
Min
100
160
250
60
100
170
100
Max
250
400
600
0.7
1.2
100
5.0
100
12
Unit
Test Condition
V
CE
= 1.0V, I
C
= 100mA
V
CE
= 1.0V, I
C
= 300mA
Characteristic (Note 2)
Current Gain Group -16
-25
-40
Current Gain Group -16
-25
-40
h
FE
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Collector-Emitter Cutoff Current
Emitter-Base Cutoff Current
Gain Bandwidth Product
Collector-Base Capacitance
Notes:
V
CE(SAT)
V
BE
I
CES
I
EBO
f
T
C
CBO
V
V
nA
µA
nA
MHz
pF
I
C
= 500mA, I
B
= 50mA
V
CE
= 1.0V, I
C
= 300mA
V
CE
= 45V
V
CE
= 25V, T
j
= 150°C
V
EB
= 4.0V
V
CE
= 5.0V, I
C
= 10mA,
f = 50MHz
V
CB
= 10V, f = 1.0MHz
1. Device mounted on Ceramic Substrate 0.7mm; 2.5cm
2
area.
2. Short duration pulse test used to minimize self-heating effect.
3. No purposefully added lead.
DS11107 Rev. 11 - 2
1 of 3
www.diodes.com
BC817-16/-25/-40
ã
Diodes Incorporated

BC817-25-13 Related Products

BC817-25-13 BC817-40-13 BC817-25-13-F
Description Small Signal Bipolar Transistor, 0.8A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3 Small Signal Bipolar Transistor, 0.8A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3 Small Signal Bipolar Transistor, 0.8A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-3
Maker Diodes Incorporated Diodes Incorporated Diodes Incorporated
package instruction SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
Contacts 3 3 3
Reach Compliance Code unknown unknown unknown
ECCN code EAR99 EAR99 EAR99
Maximum collector current (IC) 0.8 A 0.8 A 0.8 A
Collector-emitter maximum voltage 45 V 45 V 45 V
Configuration SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 100 170 100
JESD-30 code R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
JESD-609 code e0 e0 e3
Number of components 1 1 1
Number of terminals 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Polarity/channel type NPN NPN NPN
Certification status Not Qualified Not Qualified Not Qualified
surface mount YES YES YES
Terminal surface TIN LEAD TIN LEAD MATTE TIN
Terminal form GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL
transistor applications SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON
Nominal transition frequency (fT) 100 MHz 100 MHz 100 MHz
Is it lead-free? Contains lead Contains lead -
Is it Rohs certified? incompatible incompatible -
Peak Reflow Temperature (Celsius) 235 235 -
Maximum time at peak reflow temperature 10 10 -
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