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JR28F064M29EWTB

Description
FLASH 3V PROM
Categorystorage   
File Size1MB,87 Pages
ManufacturerMicron
Websitehttp://www.micron.com/
Download Datasheet Parametric Compare View All

JR28F064M29EWTB Overview

FLASH 3V PROM

JR28F064M29EWTB Parametric

Parameter NameAttribute value
Lead-freeYes
EU RoHS regulationsYes
stateACTIVE
terminal coatingMATTE TIN
Memory IC typeFLASH 3V PROM
32Mb, 64Mb, 128Mb: 3V Embedded Parallel NOR Flash
Features
Parallel NOR Flash Embedded Memory
JR28F032M29EWXX; PZ28F032M29EWXX; JS28F064M29EWXX
PC28F064M29EWXX; JR28F064M29EWXX; PZ28F064M29EWXX
JS28F128M29EWXX; PC28F128M29EWXX; RC28F128M29EWXX
Features
• Supply voltage
– V
CC
= 2.7–3.6V (program, erase, read)
– V
CCQ
= 1.65–3.6V (I/O buffers)
• Asynchronous random or page read
– Page size: 8 words or 16 bytes
– Page access: 25ns
– Random access: 60ns (BGA); 70ns (TSOP)
• Buffer program: 256-word MAX program buffer
• Program time
– 0.56µs per byte (1.8 MB/s TYP when using 256-
word buffer size in buffer program without V
PPH
)
– 0.31µs per byte (3.2 MB/s TYP when using 256-
word buffer size in buffer program with V
PPH
)
• Memory organization
– 32Mb: 64 main blocks, 64KB each, or eight 8KB
boot blocks (top or bottom) and 63 main blocks,
64KB each
– 64Mb: 128 main blocks, 64KB each, or eight 8KB
boot blocks (top or bottom) and 127 main blocks,
64 KB each
– 128Mb: 128 main blocks, 128KB each
• Program/erase controller
– Embedded byte/word program algorithms
• Program/erase suspend and resume capability
– READ operation on any block during a PRO-
GRAM SUSPEND operation
– READ or PROGRAM operation on one block dur-
ing an ERASE SUSPEND operation on another
block
• BLANK CHECK operation to verify an erased block
• Unlock bypass, block erase, chip erase, and write to
buffer capability
– Fast buffered/batch programming
– Fast block and chip erase
• V
PP
/WP# pin protection
– V
PPH
voltage on V
PP
to accelerate programming
performance
– Protects highest/lowest block (H/L uniform) or
top/bottom two blocks (T/B boot)
• Software protection
– Volatile protection
– Nonvolatile protection
– Password protection
– Password access
• Extended memory block
– 128-word (256-byte) block for permanent secure
identification
– Program or lock implemented at the factory or by
the customer
• Low-power consumption: Standby mode
• JESD47H-compliant
– 100,000 minimum ERASE cycles per block
– Data retention: 20 years (TYP)
• 65nm single-bit cell process technology
• Packages (JEDEC-standard)
– 56-pin TSOP (128Mb, 64Mb)
– 48-pin TSOP (64Mb, 32Mb)
– 64-ball FBGA (128Mb, 64Mb)
– 48-ball BGA (64Mb, 32Mb)
• Green packages available
– RoHS-compliant
– Halogen-free
• Operating temperature
– Ambient: –40°C to +85°C
PDF: 09005aef84dc44a7
m29ew_32Mb-128Mb.pdf - Rev. B 11/12 EN
1
Products and specifications discussed herein are subject to change by Micron without notice.
Micron Technology, Inc. reserves the right to change products or specifications without notice.
©
2012 Micron Technology, Inc. All rights reserved.

JR28F064M29EWTB Related Products

JR28F064M29EWTB JR28F032M29EWBB JR28F032M29EWLA JR28F032M29EWTB JR28F032M29EWXX JR28F064M29EWHB JR28F064M29EWLB PC28F064M29EWTY PC28F064M29EWXX JS28F128M29EWXX
Description FLASH 3V PROM FLASH 3V PROM FLASH 3V PROM FLASH 3V PROM FLASH 3V PROM FLASH 3V PROM FLASH 3V PROM FLASH 3V PROM FLASH 3V PROM FLASH 3V PROM
Lead-free Yes Yes Yes Yes Yes Yes Yes Yes Yes Yes
EU RoHS regulations Yes Yes Yes Yes Yes Yes Yes Yes Yes Yes
state ACTIVE ACTIVE ACTIVE ACTIVE ACTIVE ACTIVE ACTIVE ACTIVE ACTIVE ACTIVE
terminal coating MATTE TIN MATTE TIN MATTE TIN MATTE TIN MATTE TIN MATTE TIN MATTE TIN MATTE TIN MATTE TIN MATTE TIN
Memory IC type FLASH 3V PROM FLASH 3V PROM FLASH 3V PROM FLASH 3V PROM FLASH 3V PROM FLASH 3V PROM FLASH 3V PROM FLASH 3V PROM FLASH 3V PROM FLASH 3V PROM

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