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Datasheet> All Categories > Discrete semiconductor> The transistor> BCY59LEADFREE
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BCY59LEADFREE

Description
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-18, TO-18, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size70KB，2 Pages
ManufacturerCentral Semiconductor
Environmental Compliance  
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BCY59LEADFREE Overview

Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-18, TO-18, 3 PIN

BCY59LEADFREE Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerCentral Semiconductor
Parts packaging codeBCY
package instructionCYLINDRICAL, O-MBCY-W3
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage45 V
ConfigurationSINGLE
JEDEC-95 codeTO-18
JESD-30 codeO-MBCY-W3
JESD-609 codee3
Number of components1
Number of terminals3
Maximum operating temperature200 °C
Package body materialMETAL
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal surfaceMATTE TIN (315)
Terminal formWIRE
Terminal locationBOTTOM
Maximum time at peak reflow temperature10
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)150 MHz
Maximum off time (toff)800 ns
Maximum opening time (tons)150 ns

BCY59LEADFREE Preview

DATA SHEET
BCY58, VII, VIII, IX, X
BCY59, VII, VIII, IX, X
NPN SILICON TRANSISTOR
JEDEC TO-18 CASE
DESCRIPTION
The CENTRAL SEMICONDUCTOR BCY58, BCY59 Series types are Silicon NPN Epitaxial Planar Transistors,
mounted in a hermetically sealed metal case, designed for low noise amplifier and switching applications.
MAXIMUM RATINGS (TA=25°C unless otherwise noted)
SYMBOL
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Collector Current
IC
Collector Current (Peak)
ICM
Base Current (Peak)
IBM
Power Dissipation
PD
Power Dissipation(TC=25°C)
PD
Operating and Storage
Junction Temperature
TJ,Tstg
Thermal Resistance
Θ
JA
Thermal Resistance
Θ
JC
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
ICBO
VCB= Rated VCBO
ICBO
VCB= Rated VCBO, TA=150°C
IEBO
VEB=5.0V
BVCBO
IC=10µA (BCY58)
BVCBO
IC=10µA (BCY59)
BVCEO
IC=2.0mA (BCY58)
BVCEO
IC=2.0mA (BCY59)
BVEBO
IE=1.0µA
VCE(SAT)
IC=10mA, IB=250µA
VCE(SAT)
IC=100mA, IB=2.5mA
IC=10mA, IB=250µA
VBE(SAT)
VBE(SAT)
IC=100mA, IB=2.5mA
BCY58-VII
BCY59-VII
MIN
MAX
20 TYP
120
220
80
40
BCY58-VIII
BCY59-VIII
MIN
MAX
20
180
310
120
400
45
BCY58
32
32
7.0
100
200
200
340
1.0
-65 to +200
450
150
BCY59
45
45
UNITS
V
V
V
mA
mA
mA
mW
W
°C
°C/W
°C/W
MIN
MAX
10
10
10
32
45
32
45
7.0
0.35
0.70
0.85
1.20
BCY58-X
BCY59-X
MIN
MAX
100
380
630
240
1000
60
0.60
0.75
BCY58-IX
BCY59-IX
MIN
MAX
40
250
460
160
630
60
UNITS
nA
µA
nA
V
V
V
V
V
V
V
V
V
SYMBOL
hFE
hFE
hFE
hFE
TEST CONDITIONS
VCE=5.0V, IC=10µA
VCE=5.0V, IC=2.0mA
VCE=1.0V, IC=10mA
VCE=1.0V, IC=100mA
(SEE REVERSE SIDE)
R1
BCY58/BCY59
NPN SILICON TRANSISTOR
ELECTRICAL CHARACTERISTICS Continued
SYMBOL
fT
Cob
Cib
NF
ton
td
tr
toff
ts
tf
ton
td
tr
toff
ts
tf
TEST CONDITIONS
VCE=5.0V, IC=10mA, f=100MHz
VCB=10V, IE=0, f=1.0MHz
VEB=0.5V, IC=0, f=1.0MHz
VCE=5.0V, IC=200µA, RS=2kΩ, f=1.0kHz, B=200Hz
VCC=10V, IC=10mA, IB1=-IB2=1.0mA
VCC=10V, IC=10mA, IB1=-IB2=1.0mA
VCC=10V, IC=10mA, IB1=-IB2=1.0mA
VCC=10V, IC=10mA, IB1=-IB2=1.0mA
VCC=10V, IC=10mA, IB1=-IB2=1.0mA
VCC=10V, IC=10mA, IB1=-IB2=1.0mA
VCC=10V, IC=100mA, IB1=-IB2=10mA
VCC=10V, IC=100mA, IB1=-IB2=10mA
VCC=10V, IC=100mA, IB1=-IB2=10mA
VCC=10V, IC=100mA, IB1=-IB2=10mA
VCC=10V, IC=100mA, IB1=-IB2=10mA
VCC=10V, IC=100mA, IB1=-IB2=10mA
MIN
150
TYP
MAX
5.0
15
10
150
UNITS
MHz
pF
pF
dB
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
85
35
50
450
400
80
55
5.0
50
450
250
200
800
150
800
TO-18 PACKAGE - MECHANICAL OUTLINE
A
B
D
C
E
SYMBOL
A (DIA)
B (DIA)
C
D
E
F (DIA)
G (DIA)
H
I
J
DIMENSIONS
INCHES
MILLIMETERS
MIN
MAX
MIN
MAX
0.209 0.230 5.31
5.84
0.178 0.195 4.52
4.95
-
0.030
-
0.76
0.170 0.210 4.32
5.33
0.500
-
12.70
-
0.016 0.019 0.41
0.48
0.100
2.54
0.050
1.27
0.036 0.046 0.91
1.17
0.028 0.048 0.71
1.22
TO-18 (REV: R1)
F
LEAD #2
LEAD #1
G
H
LEAD #3
I
45°
J
R1
More (Only the first 5 pages are displayed. Please Download Datasheet to view the full content.) >

BCY59LEADFREE Related Products

BCY59LEADFREE BCY58LEADFREE BCY59
Description Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-18, TO-18, 3 PIN Small Signal Bipolar Transistor, 0.1A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, TO-18, TO-18, 3 PIN Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-18, TO-18, 3 PIN
Is it lead-free? Lead free Lead free Contains lead
Is it Rohs certified? conform to conform to incompatible
Maker Central Semiconductor Central Semiconductor Central Semiconductor
Parts packaging code BCY BCY BCY
package instruction CYLINDRICAL, O-MBCY-W3 CYLINDRICAL, O-MBCY-W3 CYLINDRICAL, O-MBCY-W3
Contacts 3 3 3
Reach Compliance Code compliant compliant _compli
ECCN code EAR99 EAR99 EAR99
Maximum collector current (IC) 0.1 A 0.1 A 0.1 A
Collector-emitter maximum voltage 45 V 32 V 45 V
Configuration SINGLE SINGLE SINGLE
JEDEC-95 code TO-18 TO-18 TO-18
JESD-30 code O-MBCY-W3 O-MBCY-W3 O-MBCY-W3
JESD-609 code e3 e3 e0
Number of components 1 1 1
Number of terminals 3 3 3
Maximum operating temperature 200 °C 200 °C 200 °C
Package body material METAL METAL METAL
Package shape ROUND ROUND ROUND
Package form CYLINDRICAL CYLINDRICAL CYLINDRICAL
Peak Reflow Temperature (Celsius) 260 260 NOT SPECIFIED
Polarity/channel type NPN NPN NPN
Certification status Not Qualified Not Qualified Not Qualified
surface mount NO NO NO
Terminal surface MATTE TIN (315) MATTE TIN (315) Tin/Lead (Sn/Pb)
Terminal form WIRE WIRE WIRE
Terminal location BOTTOM BOTTOM BOTTOM
Maximum time at peak reflow temperature 10 10 NOT SPECIFIED
transistor applications SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON
Nominal transition frequency (fT) 150 MHz 150 MHz 150 MHz
Maximum off time (toff) 800 ns 800 ns 800 ns
Maximum opening time (tons) 150 ns 150 ns 150 ns

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