VSK.91..PbF Series
Vishay Semiconductors
Standard Diodes, 100 A
(ADD-A-PAK Generation 5 Power Modules)
FEATURES
• High voltage
• Industrial standard package
• Thick copper baseplate
• UL E78996 approved
• 3500 V
RMS
isolating voltage
• Compliant to RoHS directive 2002/95/EC
ADD-A-PAK
• Designed and qualified for industrial level
PRODUCT SUMMARY
I
F(AV)
Type
100 A
Modules - Diode, High Voltage
BENEFITS
• Up to 1600 V
• Fully compatible TO-240AA
• High surge capability
• Easy mounting on heatsink
• Al
2
O
3
DBC insulator
• Heatsink grounded
MECHANICAL DESCRIPTION
The Generation 5 of ADD-A-PAK module combine the
excellent thermal performance obtained by the usage of
direct bonded copper substrate with superior rmechanical
ruggedness, thanks to the insertion of a solid copper
baseplate at the bottom side of the device. The Cu
baseplate allow an easier mounting on the majority of
heatsink with increased tolerance of surface roughness and
improve thermal spread.
The Generation 5 of AAP module is manufactured without
hard mold, eliminating in this way any possible direct stress
on the leads.
The electrical terminals are secured against axial pull-out:
they are fixed to the module housing via a click-stop feature
already tested and proved as reliable on other Vishay HPP
modules.
ELECTRICAL DESCRIPTION
These modules are intended for general purpose high
voltage applications such as high voltage regulated power
supplies, lighting circuits, temperature and motor speed
control circuits, UPS and battery charger.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
I
F(RMS)
I
FSM
I
2
t
I
2
√t
V
RRM
T
J
T
Stg
Range
50 Hz
60 Hz
50 Hz
60 Hz
T
C
CHARACTERISTICS
VALUES
100
100
157
2020
2110
20.43
18.65
204.3
400 to 1600
- 40 to 150
kA
2
s
kA
2
√s
V
°C
A
UNITS
A
°C
Document Number: 94359
Revision: 20-May-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
VSK.91..PbF Series
Vishay Semiconductors
Standard Diodes, 100 A
(ADD-A-PAK Generation 5 Power Modules)
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
04
06
08
VSK.91
10
12
14
16
V
RRM
, MAXIMUM
REPETITIVE PEAK
REVERSE VOLTAGE
V
400
600
800
1000
1200
1400
1600
V
RSM
, MAXIMUM
NON-REPETITIVE PEAK
REVERSE VOLTAGE
V
500
700
900
1100
1300
1500
1700
10
I
RRM
MAXIMUM
AT T
J
= 150 °C
mA
FORWARD CONDUCTION
PARAMETER
Maximum average forward current
at case temperature
Maximum RMS forward current
Maximum peak, one-cycle
forward, non-repetitive
surge current
SYMBOL
I
F(AV)
I
F(RMS)
TEST CONDITIONS
180° conduction, half sine wave
DC at 90 °C case temperature
t = 10 ms
I
FSM
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
Maximum I
2
t for fusing
I
2
t
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Maximum I
2
√t
for fusing
Low level value of threshold voltage
High level value of threshold voltage
Low level value of forward
slope resistance
High level value of forward
slope resistance
Maximum forward voltage drop
I
2
√t
V
F(TO)1
V
F(TO)2
r
f1
r
f2
V
FM
No voltage
reapplied
100 % V
RRM
reapplied
No voltage
reapplied
100 % V
RRM
reapplied
VALUES
100
100
157
2020
2110
1700
Sinusoidal half wave,
initial T
J
= T
J
maximum
1780
20.43
18.65
14.45
13.19
204.3
0.79
0.87
1.78
mΩ
(I >
π
x I
F(AV)
), T
J
= T
J
maximum
I
FM
=
π
x I
F(AV)
, T
J
= 25 °C, t
p
= 400 μs square wave
1.57
1.45
V
kA
2
√s
V
kA
2
s
A
UNITS
A
°C
t = 0.1 ms to 10 ms, no voltage reapplied
(16.7 % x
π
x I
F(AV)
< I <
π
x I
F(AV)
), T
J
= T
J
maximum
(I >
π
x I
F(AV)
), T
J
= T
J
maximum
(16.7 % x
π
x I
F(AV)
< I <
π
x I
F(AV)
), T
J
= T
J
maximum
BLOCKING
PARAMETER
Maximum peak reverse
leakage current
RMS insulation voltage
SYMBOL
I
RRM
V
INS
T
J
= 150 °C
50 Hz, circuit to base, all terminals shorted
TEST CONDITIONS
VALUES
10
3500 (1 s)
UNITS
mA
V
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For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 94359
Revision: 20-May-10
VSK.91..PbF Series
Standard Diodes, 100 A
Vishay Semiconductors
(ADD-A-PAK Generation 5 Power Modules)
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction operating and storage
temperature range
Maximum thermal resistance,
junction to case per junction
Typical thermal resistance,
case to heatsink
to heatsink
Mounting torque ± 10 %
busbar
Approximate weight
Case style
JEDEC
SYMBOL
T
J
, T
Stg
R
thJC
R
thCS
DC operation
Mounting surface flat, smooth and greased
A mounting compound is recommended and
the torque should be rechecked after a period of
3 hours to allow for the spread of the compound.
TEST CONDITIONS
VALUES
- 40 to 150
0.35
K/W
0.1
5
Nm
4
110
4
g
oz.
UNITS
°C
ADD-A-PAK (TO-240AA)
ΔR
CONDUCTION PER JUNCTION
DEVICES
VSK.91
SINE HALF WAVE CONDUCTION
180°
0.052
120°
0.064
90°
0.082
60°
0.112
30°
0.164
180°
0.043
RECTANGULAR WAVE CONDUCTION
120°
0.069
90°
0.088
60°
0.115
30°
0.165
UNITS
°C/W
Note
• Table shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC
Document Number: 94359
Revision: 20-May-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
3
VSK.91..PbF Series
Vishay Semiconductors
Maximum Allowable Case Temperature (°C)
Standard Diodes, 100 A
(ADD-A-PAK Generation 5 Power Modules)
Maximum Average Forward Power Loss (W)
180
150
140
130
120
110
VSK.91.. Series
R
thJC
(DC) = 0.35 K/W
160
140
120
Ø
Conduction angle
DC
180°
120°
90°
60°
30°
100
80
60
RMS limit
Ø
30°
100
90
60°
40
20
0
90°
120°
180°
120
Conduction period
VSK.91.. Series
Per junction
T
J
= 150 °C
0
20
40
60
80
100
120 140
160
0
20
40
60
80
100
Average Forward Current (A)
Fig. 1 - Current Ratings Characteristics
Average Forward Current (A)
Fig. 4 - Foward Power Loss Characteristics
Maximum Allowable Case Temperature (°C)
150
140
130
120
110
1800
VSK.91.. Series
R
thJC
(DC) = 0.35 K/W
1600
Paek Half Sine Wave
Forward Current (A)
1400
1200
1000
800
600
At any rated load condition and with
rated V
RRM
applied following surge.
Initial T
J
= 150 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
Ø
Conduction period
30°
100
90
60°
90°
120° 180°
0
20
40
60
80
100
120
DC
140
160
VSK.91.. Series
Per junction
1
10
100
400
Average Forward Current (A)
Fig. 2 - Current Ratings Characteristics
Number of Equal Amplitude
Half Cycle Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
140
2000
Maximum Average
Forward Power Loss (W)
120
100
80
60
Peak Half Sine Wave
Forward Current (A)
180°
120°
90°
60°
30°
RMS limit
1800
1600
1400
1200
1000
800
600
Maximum non-repetitive surge current
versus pulse train duration.
Initial T
J
= 150 °C
No voltage reapplied
Rated V
RRM
reapplied
Ø
40
20
0
Conduction angle
VSK.91.. Series
Per junction
T
J
= 150 °C
0
20
40
60
80
100
VSK.91.. Series
Per junction
0.1
1.0
400
0.01
Average Forward Current (A)
Fig. 3 - Forward Power Loss Characteristics
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
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For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 94359
Revision: 20-May-10
VSK.91..PbF Series
Standard Diodes, 100 A
Vishay Semiconductors
(ADD-A-PAK Generation 5 Power Modules)
Maximum Total Forward Power Loss (W)
Maximum Total Forward Power Loss (W)
180
160
140
120
100
80
60
40
20
0
180
160
140
120
100
80
60
40
20
0
0.5
0.
K/
R
th
3
K/
SA
W
=
1
0.
0.7
180°
(Sine)
W
K/
W
W
K/
-
Δ
DC
1.0
K
1.5
R
/W
K/W
VSK.91.. Series
Per junction
T
J
= 150 °C
0
20
40
60
80
100
120
140
160
3.0 K/
W
0
20
40
60
80
100
120
140
Total RMS Output Current
Maximum Allowable Ambient Temperature (°C)
Fig. 7 - Forward Power Loss Characteristics
500
500
Maximum Total Power Loss (W)
Maximum Total Power Loss (W)
+
400
~
-
180°
(Sine)
180°
(Rect)
R
400
thS
A
=
0.2
0.3
300
0.4
K/
300
K/W
K/W
W
-
Δ
R
0.5
200
200
100
2 x VSK.91.. Series
Single phase bridge
Connected
T
J
= 150 °C
0
40
80
120
160
200
100
K/W
1.0 K
/W
1.5 K/W
3.0 K/W
0
20
40
60
80
100
120
140
0.7
K/W
0
0
Total Output Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 8 - Forward Power Loss Characteristics
800
800
Maximum Total Power Loss (W)
Maximum Total Power Loss (W)
+
700
600
500
400
300
200
100
0
R
~
-
120°
(Rect)
700
600
500
400
300
200
100
0
th
SA
=
0.
1
K/
W
0.2
0.3
-
Δ
K/W
K/W
R
3 x VSK.91.. Series
Three phase bridge
Connected
T
J
= 150 °C
0
50
100
150
200
250
300
0.5 K
/W
0.7 K
/W
1.0 K/W
3.0 K/W
0
20
40
60
80
100
120
140
Total Output Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 9 - Forward Power Loss Characteristics
Document Number: 94359
Revision: 20-May-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
5
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