http://www.fujielectric.com/products/semiconductor/
FMW20N60S1HF
Super J-MOS series
Features
Low on-state resistance
Low switching loss
easy to use (more controllabe switching dV/dt by R
g
)
FUJI POWER MOSFET
N-Channel enhancement mode power MOSFET
Outline Drawings [mm]
TO-247-P2
Equivalent circuit schematic
Applications
UPS
Server
Telecom
Power conditioner system
Power supply
Gate(G)
①
②
③
Drain(D)
Source(S)
CONNECTION
①
GATE
②
DRAIN
③
SOURCE
DIMENSIONS ARE IN MILLIMETERS.
①
②
③
Maximum Ratings and Characteristics
Absolute Maximum Ratings at T
C
=25°C (unless otherwise specified)
Description
Drain-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Gate-Source Voltage
Repetitive and Non-Repetitive Maximum Avalanche Current
Non-Repetitive Maximum Avalanche Energy
Maximum Drain-Source dV/dt
Peak Diode Recovery dV/dt
Peak Diode Recovery -di/dt
Maximum Power Dissipation
Operating and Storage Temperature range
Note *1 : Limited by maximum channel temperature.
Note *2 : T
ch
≤150°C, See Fig.1 and Fig.2
Note *3 : Starting T
ch
=25°C, I
AS
=2A, L=216mH, V
DD
=60V, R
G
=50Ω, See Fig.1 and Fig.2
E
AS
limited by maximum channel temperature and avalanche current.
Note *4 : I
F
≤-I
D
, -di/dt=100A/μs, V
DD
≤400V, T
ch
≤150°C.
Note *5 : I
F
≤-I
D
, dV/dt=15kV/μs, V
DD
≤400V, T
ch
≤150°C.
Symbol
V
DS
V
DSX
I
D
I
DP
V
GS
I
AR
E
AS
dV
DS
/dt
dV/dt
-di/dt
P
D
T
ch
T
stg
Characteristics
600
600
±20
±12.6
±60
±30
6.6
472.2
50
15
100
2.5
140
150
-55 to +150
Unit
V
V
A
A
A
V
A
mJ
kV/μs
kV/μs
A/μs
W
°C
°C
Remarks
V
GS
=-30V
Tc=25°C
Tc=100°C
Note*1
Note*1
Note *2
Note *3
V
DS
≤ 600V
Note *4
Note *5
T
a
=25°C
Tc=25°C
1
FMW20N60S1HF
Electrical Characteristics at T
C
=25°C (unless otherwise specified)
Static Ratings
Description
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Symbol
BV
DSS
V
GS(th)
Conditions
I
D
=250μA
V
GS
=0V
I
D
=250μA
V
DS
=V
GS
V
DS
=600V
V
GS
=0V
V
DS
=480V
V
GS
=0V
V
GS
= ± 30V
V
DS
=0V
I
D
=10A
V
GS
=10V
f=1MHz, open drain
I
D
=10A
V
DS
=25V
V
DS
=10V
V
GS
=0V
f=1MHz
V
GS
=0V
V
DS
=0…480V
V
GS
=0V
V
DS
=0…480V
ID=constant
V
DD
=400V, V
GS
=10V
I
D
=10A, R
G
=27Ω
See Fig.3 and Fig.4
V
DD
=480V, I
D
=20A
V
GS
=10V
See Fig.5
L=6.02mH,T
ch
=25°C
See Fig.1 and Fig.2
I
F
=20A,V
GS
=0V
T
ch
=25°C
I
F
=20A, V
GS
=0V
V
DD
=400V
-di/dt=100A/μs
T
ch
=25°C
See Fig.6
T
ch
=25°C
T
ch
=125°C
FUJI POWER MOSFET
http://www.fujielectric.com/products/semiconductor/
min.
600
2.5
-
-
-
-
-
8.5
-
-
-
-
-
-
-
-
-
-
-
-
-
6.6
-
typ.
-
3
-
-
10
0.161
3.7
17.5
1470
3120
280
90
305
22
40
162
22
48
12.5
15
8
-
0.9
370
max.
-
3.5
25
250
100
0.19
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
1.35
-
-
-
Unit
V
V
μA
Zero Gate Voltage Drain Current
I
DSS
Gate-Source Leakage Current
Drain-Source On-State Resistance
Gate resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective output capacitance,
energy related (Note *6)
Effective output capacitance,
time related (Note *7)
Turn-On Time
Turn-Off Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source crossover Charge
Avalanche Capability
Diode Forward On-Voltage
Reverse Recovery Time
Reverse Recovery Charge
Peak Reverse Recovery Current
I
GSS
R
DS(on)
R
G
g
fs
C
iss
C
oss
C
rss
C
o(er)
C
o(tr)
t
d(on)
t
r
t
d(off)
t
f
Q
G
Q
GS
Q
GD
Q
SW
I
AV
V
SD
t
rr
Q
rr
I
rp
nA
Ω
Ω
S
pF
ns
nC
A
V
ns
μC
A
-
-
6.2
32
Note *6 : C
o(er)
is a fixed capacitance that gives the same stored energy as C
oss
while V
DS
is rising from 0 to 80% BV
DSS
.
Note *7 : C
o(tr)
is a fixed capacitance that gives the same charging times as C
oss
while V
DS
is rising from 0 to 80% BV
DSS
.
Thermal Characteristics
Description
Channel to Case
Channel to Ambient
Symbol
R
th(ch-c)
R
th(ch-a)
min.
typ.
max.
0.89
50
Unit
°C/W
°C/W
2
FMW20N60S1HF
Allowable Power Dissipation
P
D
= f(T
C
)
140
120
100
FUJI POWER MOSFET
http://www.fujielectric.com/products/semiconductor/
10
2
Safe Operating Area
I
D
= f(V
DS
): Duty=0(Single pulse), T
C
=25°C
t=
1µs
10
1
10µs
100µs
P
D
[W]
80
60
40
20
0
0
25
50
75
T
C
[°C]
100
125
150
I
D
[A]
10
0
10
-1
Power loss waveform :
Square waveform
P
D
t
1ms
10
-2
10
-1
10
0
10
V
DS
[V]
1
10
2
10
3
Typical Output Characteristics
I
D
= f(V
DS
): 80µs pulse test, T
ch
=25°C
60
55
50
45
40
35
I
D
[A]
30
25
20
15
10
5
0
0
5
10
V
DS
[V]
15
20
25
40
Typical Output Characteristics
I
D
= f(V
DS
): 80µs pulse test, T
ch
=150°C
10V
20V
8V
6.5V
35
30
8V
10V
20V
6V
25
I
D
[A]
6V
5.5V
20
15
10
5.5V
5V
5V
5
4.5V
V
GS
=4.5V
0
0
5
10
V
DS
[V]
15
20
V
GS
=4V
25
0.6
Typical Drain-Source on-state Resistance
R
DS(on)
= f(I
D
): 80µs pulse test, T
ch
=25°C
4.5V
5V
5.5V
6V
6.5V
8V
10V
1.4
1.2
1.0
R
DS(on)
[ Ω ]
V
GS
=20V
0.8
0.6
0.4
Typical Drain-Source on-state Resistance
R
DS(on)
= f(I
D
): 80µs pulse test, T
ch
=150°C
4V
4.5V
5V
0.5
5.5V
0.4
R
DS(on)
[ Ω ]
6V
8V
10V
V
GS
=20V
0.3
0.2
0.1
0.2
0.0
0
5
10
15
20
25
30
I
D
[A]
35
40
45
50
55
60
0
5
10
15
20
I
D
[A]
25
30
35
40
0.0
3
FMW20N60S1HF
Drain-Source On-state Resistance
R
DS(on)
= f(T
ch
): I
D
=10A, V
GS
=10V
FUJI POWER MOSFET
http://www.fujielectric.com/products/semiconductor/
0.6
6
Gate Threshold Voltage vs. Tch
V
GS(th)
= f(T
ch
): V
DS
=V
GS
, I
D
=250µA
0.5
5
0.4
R
DS(on)
[ Ω ]
4
V
GS(th)
[V]
max.
0.3
3
typ.
2
0.2
typ.
0.1
1
0.0
-50
-25
0
25
50
T
ch
[°C]
75
100
125
150
0
-50
-25
0
25
50
75
T
ch
[°C]
100
125
150
100
Typical Transfer Characteristic
I
D
= f(V
GS
): 80µs pulse test, V
DS
=25V
Typical Transconductance
g
fs
= f(I
D
): 80µs pulse test, V
DS
=25V
100
10
T
ch
=25℃
10
1
I
D
[A]
150℃
0.1
g
fs
[S]
T
ch
=25℃
150℃
1
0.01
1E-3
0
1
2
3
4
5
V
GS
[V]
6
7
8
9
10
0.1
0.1
1
I
D
[A]
10
100
Typical Forward Characteristics of Reverse Diode
I
F
= f(V
SD
): 80µs pulse test
10
5
Typical Capacitance
C= f(V
DS
): V
GS
=0V, f=1MHz
100
10
4
10
3
C
iss
10
150℃
C [pF]
I
F
[A]
T
ch
=25℃
10
2
C
oss
1
10
1
10
0
C
rss
0.1
0.0
0.5
1.0
V
SD
[V]
1.5
2.0
10
-1
10
-2
10
-1
10
V
DS
[V]
0
10
1
10
2
4
FMW20N60S1HF
Typical Coss stored energy
14
FUJI POWER MOSFET
http://www.fujielectric.com/products/semiconductor/
10
3
Typical Switching Characteristics vs. ID T
ch
=25°C
t= f(I
D
): V
dd
=400V, V
GS
=10V/0V, R
G
=27Ω, L=500uH
12
10
8
E
oss
[uJ]
t
r
t [ns]
10
2
t
d(off)
6
4
t
f
2
t
d(on)
0
0
100
200
300
V
DS
[V]
400
500
600
10
1
10
0
10
1
10
2
I
D
[A]
10
Typical Gate Charge Characteristics
V
GS
= f(Q
g
): I
D
=20A, V
dd
=480V, T
ch
=25°C
500
450
Maximum Avalanche Energy vs. startingTch
E(AV)= f(starting T
ch
): V
CC
=60V, I(AV)<=6.6A
I
AS
=2A
8
400
350
6
V
GS
[V]
E
AV
[mJ]
300
250
200
150
I
AS
=6.6A
I
AS
=4A
4
2
100
50
0
0
10
20
30
Q
g
[nC]
40
50
60
0
0
25
50
75
starting T
ch
[°C]
100
125
150
10
1
Transient Thermal Impedance
Z
th(ch-c)
= f(t): D=0
10
0
Z
th(ch-c)
[°C/W]
10
-1
10
-2
10
-3
10
-6
10
-5
10
-4
10
-3
t [sec]
10
-2
10
-1
10
0
5
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