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Datasheet> All Categories > Discrete semiconductor> diode> NRVBB20H100CTT4G
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NRVBB20H100CTT4G

Description
Schottky Barrier Rectifier, H-Series, 100 V, 20 A, D2PAK 2 LEAD, 800-REEL
CategoryDiscrete semiconductor    diode   
File Size347KB，11 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Environmental Compliance  
Download Datasheet Parametric View All

NRVBB20H100CTT4G Overview

Schottky Barrier Rectifier, H-Series, 100 V, 20 A, D2PAK 2 LEAD, 800-REEL

NRVBB20H100CTT4G Parametric

Parameter NameAttribute value
Brand NameON Semiconductor
Is it lead-free?Lead free
MakerON Semiconductor
Parts packaging codeTO-263
package instructionLEAD FREE, PLASTIC, CASE 418B-04, D2PAK-3/2
Contacts3
Manufacturer packaging code418B-04
Reach Compliance Codenot_compliant
ECCN codeEAR99
Other featuresLOW POWER LOSS
applicationEFFICIENCY
Shell connectionCATHODE
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.88 V
JESD-30 codeR-PSSO-G2
JESD-609 codee3
Humidity sensitivity level1
Maximum non-repetitive peak forward current250 A
Number of components2
Phase1
Number of terminals2
Maximum operating temperature175 °C
Maximum output current10 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
GuidelineAEC-Q101
Maximum repetitive peak reverse voltage100 V
Maximum reverse current4.5 µA
surface mountYES
technologySCHOTTKY
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED

NRVBB20H100CTT4G Preview

MBR20H100CTG,
MBRB20H100CTG,
MBRF20H100CTG,
NRVBB20H100CTT4G
Switch-mode
Power Rectifier
100 V, 20 A
Features and Benefits
www.onsemi.com
•
•
•
•
•
•
•
SCHOTTKY BARRIER
RECTIFIER
20 AMPERES, 100 VOLTS
1
2, 4
3
4
Low Forward Voltage: 0.64 V @ 125°C
Low Power Loss/High Efficiency
High Surge Capacity
175°C Operating Junction Temperature
20 A Total (10 A Per Diode Leg)
Guard−Ring for Stress Protection
NRVBB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
•
These Devices are Pb−Free and are RoHS Compliant
Applications
•
Power Supply − Output Rectification
•
Power Management
•
Instrumentation
Mechanical Characteristics:
1
2
1
3
2
3
TO−220
CASE 221A
STYLE 6
TO−220 FULLPAKt
CASE 221D
STYLE 3
•
Case: Epoxy, Molded
•
Epoxy Meets UL 94 V−0 @ 0.125 in
•
Weight (Approximately):
1.9 Grams (TO−220)
1.7 Grams (D
2
PAK)
•
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
•
Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
4
1
2
3
D
2
PAK 3
CASE 418B
STYLE 3
DEVICE MARKING INFORMATION
See general marking information in the device marking
section on page 2 of this data sheet.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
©
Semiconductor Components Industries, LLC, 2015
1
January, 2015 − Rev. 12
Publication Order Number:
MBR20H100CT/D
MBR20H100CTG, MBRB20H100CTG, MBRF20H100CTG, NRVBB20H100CTT4G
AYWW
B20H100G
AKA
AYWW
B20H100G
AKA
AYWW
B20H100G
AKA
TO−220
TO−220 FULLPAK
A
Y
WW
B20H100
G
AKA
= Assembly Location
= Year
= Work Week
= Device Code
= Pb−Free Device
= Polarity Designator
D
2
PAK 3
Figure 1. Marking Diagrams
MAXIMUM RATINGS
(Per Diode Leg)
Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage‘
Average Rectified Forward Current
(Rated V
R
) T
C
= 162°C
Peak Repetitive Forward Current
(Rated V
R
, Square Wave, 20 kHz) T
C
= 160°C
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
Operating Junction Temperature (Note 1)
Storage Temperature
Voltage Rate of Change (Rated V
R
)
Controlled Avalanche Energy (see test conditions in Figures 11 and 12)
ESD Ratings:
Machine Model = C
Human Body Model = 3B
Symbol
V
RRM
V
RWM
V
R
I
F(AV)
10
I
FRM
20
I
FSM
250
T
J
T
stg
dv/dt
W
AVAL
+175
*65
to +175
10,000
200
> 400
> 8000
°C
°C
V/ms
mJ
V
A
A
Value
100
Unit
V
A
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dP
D
/dT
J
< 1/R
qJA
.
THERMAL CHARACTERISTICS
Characteristic
Maximum Thermal Resistance
(MBR20H100CTG, MBRB20H100CTG and NRVBB20H100CTT4G)
Junction−to−Case
Junction−to−Ambient
(MBRF20H100CTG)
Junction−to−Case
Symbol
Value
Unit
°C/W
R
qJC
R
qJA
R
qJC
2.0
60
2.5
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
www.onsemi.com
2
MBR20H100CTG, MBRB20H100CTG, MBRF20H100CTG, NRVBB20H100CTT4G
ELECTRICAL CHARACTERISTICS
(Per Diode Leg)
Characteristic
Maximum Instantaneous Forward Voltage (Note 2)
(I
F
= 10 A, T
C
= 25°C)
(I
F
= 10 A, T
C
= 125°C)
(I
F
= 20 A, T
C
= 25°C)
(I
F
= 20 A, T
C
= 125°C)
Maximum Instantaneous Reverse Current (Note 2)
(Rated DC Voltage, T
C
= 125°C)
(Rated DC Voltage, T
C
= 25°C)
Symbol
v
F
0.77
0.64
0.88
0.73
i
R
6.0
0.0045
mA
Value
Unit
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width = 300
ms,
Duty Cycle
≤
2.0%.
ORDERING INFORMATION
Device Order Number
MBR20H100CTG
MBRF20H100CTG
MBRB20H100CTT4G
NRVBB20H100CTT4G*
Package
TO−220
(Pb−Free)
TO−220FP
(Pb−Free)
D
2
PAK 3
(Pb−Free)
D
2
PAK 3
(Pb−Free)
Shipping
†
50 Units / Rail
50 Units / Rail
800 / Tape & Reel
800 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specification Brochure, BRD8011/D.
*NRVBB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable.
www.onsemi.com
3
MBR20H100CTG, MBRB20H100CTG, MBRF20H100CTG, NRVBB20H100CTT4G
I
F
, INSTANTANEOUS FORWARD CURRENT (AMPS)
I
F
, INSTANTANEOUS FORWARD CURRENT (AMPS)
100
100
T
J
= 150°C
10
T
J
= 125°C
T
J
= 150°C
10
T
J
= 125°C
1
T
J
= 25°C
1
T
J
= 25°C
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
V
F
, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
V
F
, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage
Figure 2. Maximum Forward Voltage
1.0E−01
I
R
, REVERSE CURRENT (AMPS)
1.0E−02
T
J
= 150°C
I
R
, MAXIMUM REVERSE CURRENT (AMPS)
1.0E−01
1.0E−02
1.0E−03
1.0E−04
1.0E−05
T
J
= 25°C
T
J
= 150°C
1.0E−03
1.0E−04
1.0E−05
T
J
= 25°C
T
J
= 125°C
T
J
= 125°C
1.0E−06
1.0E−07
1.0E−06
1.0E−07
1.0E−08
0
20
40
60
80
100
1.0E−08
0
20
40
60
80
100
V
R
, REVERSE VOLTAGE (VOLTS)
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 3. Typical Reverse Current
Figure 4. Maximum Reverse Current
I
F
, AVERAGE FORWARD CURRENT (AMPS)
P
FO
, AVERAGE POWER DISSIPATION
(WATTS)
20
dc
15
SQUARE WAVE
10
16
14
12
SQUARE
10
8
6
4
2
0
0
5
10
15
20
25
I
O
, AVERAGE FORWARD CURRENT (AMPS)
DC
5
0
100
110
120
130
140
150
160
170
180
T
C
, CASE TEMPERATURE (°C)
Figure 5. Current Derating
www.onsemi.com
4
Figure 6. Forward Power Dissipation
MBR20H100CTG, MBRB20H100CTG, MBRF20H100CTG, NRVBB20H100CTT4G
10000
T
J
= 25°C
C, CAPACITANCE (pF)
1000
100
10
0
20
40
60
80
100
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 7. Capacitance
R(t), TRANSIENT THERMAL RESISTANCE
100
D = 0.5
10
0.2
0.1
0.05
0.01
P
(pk)
t
1
t
2
SINGLE PULSE
DUTY CYCLE, D = t
1
/t
2
0.001
0.01
t
1
, TIME (sec)
0.1
1
10
100
1000
1
0.1
0.01
0.000001
0.00001
0.0001
Figure 8. Thermal Response Junction−to−Ambient for MBR20H100CT, MBRB20H100CT
and NRVBB20H100CTT4G
R(t), TRANSIENT THERMAL RESISTANCE
10
1
D = 0.5
0.2
0.1
0.05
0.1
0.01
SINGLE PULSE
0.01
0.000001
0.00001
0.0001
0.001
0.01
t
1
, TIME (sec)
0.1
1
10
P
(pk)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
100
1000
Figure 9. Thermal Response Junction−to−Case for MBR20H100CT, MBRB20H100CT
and NRVBB20H100CTT4G
www.onsemi.com
5
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