256Kx16 Bit High Speed Static RAM(5.0V Operating).
Operated at Commercial and Industrial Temperature Ranges.
CMOS SRAM
Revision History
Rev No.
Rev. 0.0
Rev. 0.1
Rev. 0.2
History
Initial release with Preliminary.
Package dimension modify on page 11.
Change Icc, Isb and Isb1
Item
I
CC(Commercial)
10ns
12ns
15ns
10ns
12ns
15ns
Previous
90mA
80mA
70mA
115mA
100mA
85mA
30mA
10mA
Current
65mA
55mA
45mA
85mA
75mA
65mA
20mA
5mA
Draft Data
September. 7. 2001
Septermber.28. 2001
November, 3, 2001
Remark
Preliminary
Preliminary
Preliminary
I
CC(Industrial)
I
SB
I
SB1(Normal)
Rev. 0.3
1. Correct AC parameters : Read & Write Cycle
2. Corrrect Power part : Delete "P-Industrial,Low Power" part
3. Delete Data Retention Characteristics
1. Delete 15ns speed bin.
2. Change Icc for Industrial mode.
Item
10ns
I
CC(Industrial)
12ns
November, 23, 2001
Preliminary
Rev. 0.4
December, 18, 2001
Previous
85mA
75mA
Current
75mA
65mA
Preliminary
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
-1-
Rev 0.4
December 2001
PRELIMPreliminaryPPPPPPPPPINARY
Preliminary
K6R4016C1D
4Mb Async. Fast SRAM Ordering Information
Org.
1M x4
Part Number
K6R4004C1D-JC(I) 10/12
K6R4004V1D-JC(I) 08/10
512K x8
K6R4008C1D-J(T)C(I) 10/12
K6R4008V1D-J(T)C(I) 08/10
256K x16
K6R4016C1D-J(T,E)C(I) 10/12
K6R4016V1D-J(T,E)C(I,L,P) 08/10
VDD(V)
5
3.3
5
3.3
5
3.3
Speed ( ns )
10/12
8/10
10/12
8/10
10/12
8/10
J : 36-SOJ
T : 44-TSOP2
J : 44-SOJ
T : 44-TSOP2
E : 48-TBGA
CMOS SRAM
PKG
J : 32-SOJ
Temp. & Power
C : Commercial Temperature
,Normal Power Range
I : Industrial Temperature
,Normal Power Range
L : Commercial Temperature
,Low Power Range
P : Industrial Temperature
,Low Power Range
-2-
Rev 0.4
December 2001
PRELIMPreliminaryPPPPPPPPPINARY
Preliminary
K6R4016C1D
256K x 16 Bit High-Speed CMOS Static RAM
FEATURES
• Fast Access Time 10,12ns(Max.)
• Low Power Dissipation
Standby (TTL) : 20mA(Max.)
(CMOS) : 5mA(Max.)
Operating K6R4016C1D-10 : 65mA(Max.)
K6R4016C1D-12 : 55mA(Max.)
• Single 5.0V±10
%
Power Supply
• TTL Compatible Inputs and Outputs
• Fully Static Operation
- No Clock or Refresh required
• Three State Outputs
• Center Power/Ground Pin Configuration
• Data Byte Control : LB : I/O1~ I/O8, UB : I/O9~ I/O16
• Standard Pin Configuration
K6R4016C1D-J : 44-SOJ-400
K6R4016C1D-T : 44-TSOP2-400BF
K6R4016C1D-E : 48-TBGA with 0.75 Ball pitch
(7mm X 9mm)
• Operating in Commercial and Industrial Temperature range.
CMOS SRAM
GENERAL DESCRIPTION
The K6R4016C1D is a 4,194,304-bit high-speed Static Ran-
dom Access Memory organized as 262,144 words by 16 bits.
The K6R4016C1D uses 16 common input and output lines and
has an output enable pin which operates faster than address
access time at read cycle. Also it allows that lower and upper
byte access by data byte control(UB, LB). The device is fabri-
cated using SAMSUNG′s advanced CMOS process and
designed for high-speed circuit technology. It is particularly well
suited for use in high-density high-speed system applications.
The K6R4016C1D is packaged in a 400mil 44-pin plastic SOJ
or TSOP(II) forward or 48 T BGA.
FUNCTIONAL BLOCK DIAGRAM
Clk Gen.
A
0
A
1
A
2
A
3
A
4
A
5
A
6
A
7
A
8
A
9
I/O
1
~I/O
8
I/O
9
~I/O
16
Pre-Charge Circuit
Row Select
Memory Array
1024 Rows
256 x 16 Columns
Data
Cont.
Data
Cont.
Gen.
CLK
I/O Circuit &
Column Select
A
10
A
11
A
12
A
13
A
14
A
15
A
16
A
17
WE
OE
UB
LB
CS
-3-
Rev 0.4
December 2001
PRELIMPreliminaryPPPPPPPPPINARY
Preliminary
K6R4016C1D
PIN CONFIGURATION
(Top View)
1
2
3
4
CMOS SRAM
5
6
A
0
A
1
A
2
A
3
A
4
CS
I/O
1
I/O
2
I/O
3
1
2
3
4
5
6
7
8
9
44 A
17
43 A
16
42 A
15
41 OE
40 UB
39 LB
38 I/O
16
37 I/O
15
36 I/O
14
D
Vss
I/O4
A17
A7
I/O12
Vcc
C
I/O2
I/O3
A5
A6
I/O11
I/O10
B
I/O1
UB
A3
A4
CS
I/O9
A
LB
OE
A0
A1
A2
N.C
I/O
4
10
Vcc 11
Vss 12
I/O
5
13
I/O
6
14
I/O
7
15
I/O
8
16
WE 17
A
5
18
A
6
19
A
7
20
A
8
21
A
9
22
SOJ/
TSOP2
35 I/O
13
34 Vss
33 Vcc
32 I/O
12
31 I/O
11
30 I/O
10
29 I/O
9
28 N.C
27 A
14
26 A
13
25 A
12
24 A
11
23 A
10
H
N.C
A8
A9
A10
A11
N.C
G
I/O8
N.C
A12
A13
WE
I/O16
F
I/O7
I/O6
A14
A15
I/O14
I/O15
E
Vcc
I/O5
N.C
A16
I/O13
Vss
48-TBGA
PIN FUNCTION
Pin Name
A
0
- A
17
WE
CS
OE
LB
UB
I/O
1
~ I/O
16
V
CC
V
SS
N.C
Pin Function
Address Inputs
Write Enable
Chip Select
Output Enable
Lower-byte Control(I/O
1
~I/O
8
)
Upper-byte Control(I/O
9
~I/O
16
)
Data Inputs/Outputs
Power(+5.0V)
Ground
No Connection
ABSOLUTE MAXIMUM RATINGS*
Parameter
Voltage on Any Pin Relative to V
SS
Voltage on V
CC
Supply Relative to V
SS
Power Dissipation
Storage Temperature
Operating Temperature
Commercial
Industrial
Symbol
V
IN
, V
OUT
V
CC
P
D
T
STG
T
A
T
A
Rating
-0.5 to V
CC
+0.5
-0.5 to 7.0
1.0
-65 to 150
0 to 70
-40 to 85
Unit
V
V
W
°C
°C
°C
*
Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may affect reliability.
-4-
Rev 0.4
December 2001
PRELIMPreliminaryPPPPPPPPPINARY
Preliminary
K6R4016C1D
RECOMMENDED DC OPERATING CONDITIONS*
(T
A
=0 to 70°C)
Parameter
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
Symbol
V
CC
V
SS
V
IH
V
IL
Min
4.5
0
2.2
-0.5**
Typ
5.0
0
-
-
CMOS SRAM
Max
5.5
0
V
CC
+0.5***
0.8
Unit
V
V
V
V
* The above parameters are also guaranteed at industrial temperature range.
** V
IL
(Min) = -2.0V a.c(Pulse Width
≤
8ns) for I
≤
20mA
.
*** V
IH
(Max) = V
CC
+ 2.0V a.c (Pulse Width
≤
8ns) for I
≤
20mA.
DC AND OPERATING CHARACTERISTICS*
(T
A
=0 to 70°C, Vcc=5.0V±10%, unless otherwise specified)
Parameter
Input Leakage Current
Output Leakage Current
Operating Current
Symbol
I
LI
I
LO
I
CC
V
IN
=V
SS
to V
CC
CS=V
IH
or OE=V
IH
or WE=V
IL
V
OUT
=V
SS
to V
CC
Min. Cycle, 100% Duty
CS=V
IL,
V
IN
=V
IH
or V
IL,
I
OUT
=0mA
Com.
10ns
12ns
Ind.
10ns
12ns
Standby Current
I
SB
I
SB1
Output Low Voltage Level
Output High Voltage Level
V
OL
V
OH
Min. Cycle, CS=V
IH
f=0MHz, CS≥V
CC
-0.2V,
V
IN
≥V
CC
-0.2V or V
IN
≤0.2V
I
OL
=8mA
I
OH
=-4mA
Test Conditions
Min
-2
-2
-
-
-
-
-
-
-
2.4
Max
2
2
65
55
75
65
20
5
0.4
-
V
V
mA
Unit
µA
µA
mA
* The above parameters are also guaranteed at industrial temperature range.
CuHead Pro[/url][/size][/color] is a router development board. Below is the configuration information of the development board. [/size][/font][/color][/align][table] [tr][td]Name[/td][td]Model[/td][td...
[size=3]Have you noticed this spectrum analyzer? [url=https://bbs.eeworld.com.cn/TI/20130901/]https://bbs.eeworld.com.cn/TI/20130901/[/url]This is it. Spectrum analyzers are often seen as high-end and...
I was admitted to graduate school this year, and I would like to choose embedded system as my major. What can I learn on my own in the next 4 months?...
"Professional Embedded Software Development: Towards High-Quality and Efficient Programming" is divided into 6 chapters. The hardware chapter introduces the processor concepts that need to be mastered...
The abstract mainly consists of three parts, namely: the research problem, process and method, and results. Only when the abstract is written correctly and well can it help readers understand the orig...
At present, the development of wireless power supply technology for electric vehicles (EVs) is becoming more and more active. In 2012, Volvo of Sweden established Volvo Technology Japan in Tokyo as...[Details]
Assume that data is read from 8-bit AD (if it is a higher-bit AD, the data type can be defined as int), the subroutine is get_ad();
1. Limited secondary filtering
/* A value can be adjust...[Details]
introduction
With the continuous optimization of surface mount technology (SMT) and the rapid development of chip component manufacturing technology, the application of chip mounters in the el...[Details]
1. Introduction
Automobile pollution is one of the most important issues that people are most concerned about and need to solve urgently. As an important method for detecting automobile exhau...[Details]
Automotive applications are particularly sensitive to EMI events, which are unavoidable in a noisy electrical environment consisting of a central battery, bundled wiring harnesses, various inductiv...[Details]
Floating-point digital signal processing has become a constant requirement for precision technology, often in applications requiring high accuracy in areas such as aviation, industrial machinery, a...[Details]
In order to highlight the concept of "energy saving and environmental protection" of intelligent buildings, solar street lights are designed for intelligent communities. The inclination and capacit...[Details]
1 Introduction
Solar street lights are mainly composed of four parts: solar photovoltaic cell components, batteries, charge and discharge controllers, and lighting fixtures. The bo...[Details]
Although it is relatively easy to check the stability of a simple amplifier at lower frequencies, it may be much more difficult to evaluate the stability of a more complex circuit. This artic...[Details]
We know that microcontroller development tools generally include real-time online emulators and programmers. Among them, online emulators are very good tools, but they are also more expensive...[Details]
Overview
In spectral measurement, photomultiplier tubes (PMT) and charge-coupled devices (CCD) are often used as photoelectric converters. PMT is used in slow-changing, high-precision spectral...[Details]
1 Load Regulation
Changes in power supply load will cause changes in power supply output. When the load increases, the output decreases, and vice versa, when the load decreases, the output inc...[Details]
The future energy storage hotspot is not coal or iron ore, but lithium. This lightest metal in nature may be the heaviest resource in the future energy landscape. China launched an ambitious electr...[Details]
The power consumption of a switching power supply includes fixed losses caused by parasitic resistances such as semiconductor switches, magnetic components, and wiring, as well as switching losses ...[Details]
0 Introduction
In the design and construction of communication systems,
communication power supply
is called the heart of the communication system. The power supply system will dire...[Details]
RF/Wirelessly
京公网安备 11010802033920号
EEWORLD
