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IS64LV25616AL-12BA2

Description
Standard SRAM, 256KX16, 12ns, CMOS, PBGA48, 8 X 10 MM, MINI, BGA-48
Categorystorage    storage   
File Size91KB,14 Pages
ManufacturerIntegrated Silicon Solution ( ISSI )
Download Datasheet Parametric Compare View All

IS64LV25616AL-12BA2 Overview

Standard SRAM, 256KX16, 12ns, CMOS, PBGA48, 8 X 10 MM, MINI, BGA-48

IS64LV25616AL-12BA2 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerIntegrated Silicon Solution ( ISSI )
Parts packaging codeBGA
package instruction8 X 10 MM, MINI, BGA-48
Contacts48
Reach Compliance Codeunknown
ECCN code3A991.B.2.A
Maximum access time12 ns
I/O typeCOMMON
JESD-30 codeR-PBGA-B48
JESD-609 codee0
length10 mm
memory density4194304 bit
Memory IC TypeSTANDARD SRAM
memory width16
Humidity sensitivity level3
Number of functions1
Number of terminals48
word count262144 words
character code256000
Operating modeASYNCHRONOUS
Maximum operating temperature105 °C
Minimum operating temperature-40 °C
organize256KX16
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeTFBGA
Encapsulate equivalent codeBGA48,6X8,30
Package shapeRECTANGULAR
Package formGRID ARRAY, THIN PROFILE, FINE PITCH
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply3.3 V
Certification statusNot Qualified
Filter levelAEC-Q100
Maximum seat height1.2 mm
Maximum standby current0.015 A
Minimum standby current2 V
Maximum slew rate0.11 mA
Maximum supply voltage (Vsup)3.63 V
Minimum supply voltage (Vsup)3.135 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formBALL
Terminal pitch0.75 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
width8 mm
IS64LV25616AL
256K x 16 HIGH SPEED ASYNCHRONOUS
CMOS STATIC RAM WITH 3.3V SUPPLY
FEATURES
• High-speed access time: 10, 12 ns
• CMOS low power operation
• Low stand-by power:
Less than 5 m
A
(typ.) CMOS stand-by
• TTL compatible interface levels
• Single 3.3V power supply
• Fully static operation: no clock or refresh
required
• Three state outputs
• Data control for upper and lower bytes
• Industrial temperature available
• Temperature Offerings:
Option A1: –40
o
C to +85
o
C
Option A2: –40
o
C to +105
o
C
Option A3: –40
o
C to +125
o
C
ISSI
JUNE 2003
®
DESCRIPTION
The
ISSI
IS64LV25616AL is a high-speed, 4,194,304-bit
static RAM organized as 262,144 words by 16 bits. It is
fabricated using
ISSI
's high-performance CMOS technol-
ogy. This highly reliable process coupled with innovative
circuit design techniques, yields high-performance and low
power consumption devices.
When
CE
is HIGH (deselected), the device assumes a
standby mode at which the power dissipation can be
reduced down with CMOS input levels.
Easy memory expansion is provided by using Chip Enable
and Output Enable inputs,
CE
and
OE.
The active LOW
Write Enable (WE) controls both writing and reading of the
memory. A data byte allows Upper Byte (UB) and Lower
Byte (LB) access.
The IS64LV25616AL is packaged in the JEDEC standard
44-pin TSOP Type II and 48-pin Mini BGA (8mm x 10mm).
FUNCTIONAL BLOCK DIAGRAM
A0-A17
DECODER
256K x 16
MEMORY ARRAY
V
DD
GND
I/O0-I/O7
Lower Byte
I/O8-I/O15
Upper Byte
I/O
DATA
CIRCUIT
COLUMN I/O
CE
OE
WE
UB
LB
CONTROL
CIRCUIT
Copyright © 2003 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. A
06/25/03
1

IS64LV25616AL-12BA2 Related Products

IS64LV25616AL-12BA2 IS64LV25616AL-12BA3 IS64LV25616AL-10BA1 IS64LV25616AL-12TA2 IS64LV25616AL-10TA1
Description Standard SRAM, 256KX16, 12ns, CMOS, PBGA48, 8 X 10 MM, MINI, BGA-48 Standard SRAM, 256KX16, 12ns, CMOS, PBGA48, 8 X 10 MM, MINI, BGA-48 Standard SRAM, 256KX16, 10ns, CMOS, PBGA48, 8 X 10 MM, MINI, BGA-48 Standard SRAM, 256KX16, 12ns, CMOS, PDSO44, PLASTIC, TSOP2-44 Standard SRAM, 256KX16, 10ns, CMOS, PDSO44, PLASTIC, TSOP2-44
Is it lead-free? Contains lead Contains lead Contains lead Contains lead Contains lead
Is it Rohs certified? incompatible incompatible incompatible incompatible incompatible
Maker Integrated Silicon Solution ( ISSI ) Integrated Silicon Solution ( ISSI ) Integrated Silicon Solution ( ISSI ) Integrated Silicon Solution ( ISSI ) Integrated Silicon Solution ( ISSI )
Parts packaging code BGA BGA BGA TSOP2 TSOP2
package instruction 8 X 10 MM, MINI, BGA-48 8 X 10 MM, MINI, BGA-48 8 X 10 MM, MINI, BGA-48 TSOP2, TSOP44,.46,32 TSOP2, TSOP44,.46,32
Contacts 48 48 48 44 44
Reach Compliance Code unknown unknown unknown not_compliant not_compliant
ECCN code 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A
Maximum access time 12 ns 12 ns 10 ns 12 ns 10 ns
I/O type COMMON COMMON COMMON COMMON COMMON
JESD-30 code R-PBGA-B48 R-PBGA-B48 R-PBGA-B48 R-PDSO-G44 R-PDSO-G44
JESD-609 code e0 e0 e0 e0 e0
length 10 mm 10 mm 10 mm 18.415 mm 18.415 mm
memory density 4194304 bit 4194304 bit 4194304 bit 4194304 bit 4194304 bit
Memory IC Type STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM
memory width 16 16 16 16 16
Humidity sensitivity level 3 3 3 3 3
Number of functions 1 1 1 1 1
Number of terminals 48 48 48 44 44
word count 262144 words 262144 words 262144 words 262144 words 262144 words
character code 256000 256000 256000 256000 256000
Operating mode ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
Maximum operating temperature 105 °C 125 °C 85 °C 105 °C 85 °C
Minimum operating temperature -40 °C -40 °C -40 °C -40 °C -40 °C
organize 256KX16 256KX16 256KX16 256KX16 256KX16
Output characteristics 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code TFBGA TFBGA TFBGA TSOP2 TSOP2
Encapsulate equivalent code BGA48,6X8,30 BGA48,6X8,30 BGA48,6X8,30 TSOP44,.46,32 TSOP44,.46,32
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE
Parallel/Serial PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
power supply 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Filter level AEC-Q100 AEC-Q100 AEC-Q100 AEC-Q100 AEC-Q100
Maximum seat height 1.2 mm 1.2 mm 1.2 mm 1.2 mm 1.2 mm
Maximum standby current 0.015 A 0.02 A 0.01 A 0.015 A 0.01 A
Minimum standby current 2 V 2 V 2 V 2 V 2 V
Maximum slew rate 0.11 mA 0.12 mA 0.1 mA 0.11 mA 0.1 mA
Maximum supply voltage (Vsup) 3.63 V 3.63 V 3.63 V 3.63 V 3.63 V
Minimum supply voltage (Vsup) 3.135 V 3.135 V 3.135 V 3.135 V 3.135 V
Nominal supply voltage (Vsup) 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V
surface mount YES YES YES YES YES
technology CMOS CMOS CMOS CMOS CMOS
Temperature level INDUSTRIAL AUTOMOTIVE INDUSTRIAL INDUSTRIAL INDUSTRIAL
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form BALL BALL BALL GULL WING GULL WING
Terminal pitch 0.75 mm 0.75 mm 0.75 mm 0.8 mm 0.8 mm
Terminal location BOTTOM BOTTOM BOTTOM DUAL DUAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
width 8 mm 8 mm 8 mm 10.16 mm 10.16 mm

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