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SS18

Description
1 A, 80 V, SILICON, SIGNAL DIODE, DO-214AC
Categorysemiconductor    Discrete semiconductor   
File Size237KB,1 Pages
ManufacturerJuxing Electronic
Websitehttp://www.trr-jx.com
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SS18 Overview

1 A, 80 V, SILICON, SIGNAL DIODE, DO-214AC

SS18~SS1200
Surface Mount Schottky Rectifiers
Major Ratings and Characteristics
I
F(AV)
1.0 A
V
RRM
I
FSM
V
F
T
j
max.
Features
80 V to 200 V
30 A
0.85V
150 °C
Low profile package
Ideal for automated placement
Ultrafast reverse recovery time
Low power losses, high efficiency
Low forward voltage drop
High surge capability
High temperatrue soldering:
260℃/10 seconds at terminals
Component in accordance to
RoHS 2002/95/1 and WEEE 2002/96/EC
Mechanical Date
Case: JEDEC DO-214ACmolded plastic
body over passivated chip
Terminals: Solder plated, solderable per
J-STD-002B and JESD22-B102D
Polarity: Laser band denotes cathode end
Maximum Ratings & Thermal Characteristics & Electrical Characteristics
(TA = 25 °C unless otherwise noted)
Symbol
SS18
SS110
SS1150
SS1200
UNIT
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
Maximum instantaneous forwad voltage at 1.0A
Maximum DC reverse current
at Rated DC blocking voltage
Voltage rate of change (rated VR)
Thermal resistance from junction to ambient
Operating junction and storage
temperature range
T
A
= 25
T
A
= 100℃
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
dv/dt
R
θJA
T
J
, T
STG
80
56
80
100
70
100
1
30
0.85
0.5
5
10000
88
150
105
150
200
140
200
V
V
V
A
A
V
mA
mA
V/µs
℃/
W
– 65 to +150
http://www.trr-jx.com

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SS18 SS1150 SS1200
Description 1 A, 80 V, SILICON, SIGNAL DIODE, DO-214AC 1 A, 80 V, SILICON, SIGNAL DIODE, DO-214AC 1 A, 80 V, SILICON, SIGNAL DIODE, DO-214AC
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