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Datasheet> All Categories > Discrete semiconductor> The transistor> DDA143EH-7
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DDA143EH-7

Description
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon, GREEN, PLASTIC PACKAGE-6
CategoryDiscrete semiconductor    The transistor   
File Size262KB，6 Pages
ManufacturerDiodes Incorporated
Environmental Compliance  
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DDA143EH-7 Overview

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon, GREEN, PLASTIC PACKAGE-6

DDA143EH-7 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerDiodes Incorporated
package instructionGREEN, PLASTIC PACKAGE-6
Contacts6
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time19 weeks
Other featuresBUILT-IN BIAS RESISTOR RATIO 1
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage50 V
ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)20
JESD-30 codeR-PDSO-F6
JESD-609 codee3
Humidity sensitivity level1
Number of components2
Number of terminals6
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typePNP
Maximum power dissipation(Abs)0.15 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperature40
Transistor component materialsSILICON
Nominal transition frequency (fT)250 MHz

DDA143EH-7 Preview

DDA (xxxx) H
PNP PRE-BIASED SMALL SIGNAL DUAL SURFACE MOUNT TRANSISTOR
Features
Epitaxial Planar Die Construction
Complementary NPN Types Available (DDC)
Built-In Biasing Resistors
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
P/N
DDA124EH
DDA144EH
DDA143EH
DDA114YH
DDA123JH
DDA114EH
DDA143TH
DDA114TH
R1 (NOM)
22kΩ
47kΩ
4.7kΩ
10kΩ
2.2kΩ
10kΩ
4.7kΩ
10kΩ
R2 (NOM)
22kΩ
47kΩ
4.7kΩ
47kΩ
47kΩ
10kΩ
DDA114TH
Mechanical Data
Case: SOT563
Case Material: Molded Plastic UL Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Weight: 0.005 grams (Approximate)
SCHEMATIC DIAGRAM, TOP VIEW
6
5
4
6
5
R
1
R
1
4
R
1
R
2
R
2
R
1
1
2
3
1
2
3
R
1
, R
2
Device Schematic
R
1
Only
Device Schematic
Ordering Information
(Note 4)
Product
DDA124EH-7
DDA144EH-7
DDA143EH-7
DDA114YH-7
DDA123JH-7
DDA114EH-7
DDA143TH-7
DDA114TH-7
Notes:
Compliance
AEC-Q101
AEC-Q101
AEC-Q101
AEC-Q101
AEC-Q101
AEC-Q101
AEC-Q101
AEC-Q101
Marking
P17
P20
P08
P14
P06
P13
P07
P12
Reel Size (inches)
7
7
7
7
7
7
7
7
Tape Width (mm)
8
8
8
8
8
8
8
8
Quantity per Reel
3,000
3,000
3,000
3,000
3,000
3,000
3,000
3,000
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
SOT563
PXX = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: C = 2015
M = Month ex: 9 = September
PXXYM
Date Code Key
Year
Code
Month
Code
2015
C
Jan
1
2016
D
Feb
2
Mar
3
2017
E
Apr
4
2018
F
May
5
2019
G
Jun
6
2020
H
Jul
7
2021
I
Aug
8
Sep
9
2022
J
Oct
O
2023
K
Nov
N
2024
L
Dec
D
June 2016
© Diodes Incorporated
DDA (xxxx) H
Document number: DS30420 Rev. 6 - 2
1 of 6
www.diodes.com
DDA (xxxx) H
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Supply Voltage
Input Voltage
DDA124EH
DDA144EH
DDA143EH
DDA114YH
DDA123JH
DDA114EH
DDA143TH
DDA114TH
DDA124EH
DDA144EH
DDA143EH
DDA114YH
DDA123JH
DDA114EH
DDA143TH
DDA114TH
All
(Note 5)
Symbol
V
CC
Value
-50
+10 to -40
+10 to -40
+10 to -30
+6 to -40
+5 to -12
+10 to -40
+5V Max
+5V Max
-30
-30
-100
-70
-100
-50
-100
-100
-100
150
833
-55 to +150
Unit
V
V
IN
V
Output Current
I
O
mA
Output Current
Power Dissipation
Thermal Resistance, Junction to Ambient Air
Operating and Storage Temperature Range
Note:
I
C
(Max)
P
D
R
θJA
T
J
, T
STG
mA
mW
°C/W
°C
5. Mounted on FR4 Board with recommended pad layout at http://www.diodes.com/package-outlines.html.
DDA (xxxx) H
Document number: DS30420 Rev. 6 - 2
2 of 6
www.diodes.com
June 2016
© Diodes Incorporated
DDA (xxxx) H
Electrical Characteristics
(@T
A
= +25°C unless otherwise specified.)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(SAT)
h
FE
f
T
Min
-50
-50
-5
100
Typ
250
250
Max
-0.5
-0.5
-0.3
600
Unit
V
V
V
µA
µA
V
MHz
I
C
= -50µA
I
C
= -1mA
I
E
= -50µA
V
CB
= -50V
V
EB
= -4V
I
C
/I
B
= -2.5mA / -0.25mA
I
C
/I
B
= -1mA / -0.1mA
I
C
= -1mA, V
CE
= -5V
V
CE
= -10V, I
E
= 5mA, f = 100MHz
DDA143TH
DDA114TH
Test Condition
Characteristic (DDA143TH & DDA114TH only)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Saturation Voltage
DC Current Transfer Ratio
Gain-Bandwidth Product*
Characteristic
DDA124EH
DDA144EH
DDA143EH
DDA114YH
DDA123JH
DDA114EH
DDA124EH
DDA144EH
DDA143EH
DDA114YH
DDA123JH
DDA114EH
DDA124EH
DDA144EH
DDA143EH
DDA114YH
DDA123JH
DDA114EH
DDA124EH
DDA144EH
DDA143EH
DDA114YH
DDA123JH
DDA114EH
Symbol
Min
-0.5
-0.5
-0.5
-0.3
-0.5
-0.5
Typ
-1.1
-1.1
-1.1


-1.1
-1.9
-1.9
-1.9


1.9
Max
Unit
Test Condition
V
L(OFF)
V
V
CC
= -5V, I
O
= -100µA
Input Voltage
V
L(ON)
-3.0
-3.0
-3.0
-1.4
-1.1
-3.0
Output Voltage
V
O(ON)
-0.1
-0.3
V
V
O
= -0.3V, I
O
= -5mA
V
O
= -0.3V, I
O
= -2mA
V
O
= -0.3V, I
O
= -20mA
V
O
= -0.3V, I
O
= -1mA
V
O
= -0.3V, I
O
= -5mA
V
O
= -0.3V, I
O
= -10mA
I
O
/I
L
= -10mA / -0.5mA
I
O
/I
L
= -10mA / -0.5mA
I
O
/I
L
= -10mA / -0.5mA
I
O
/I
L
= -5mA / -0.25mA
I
O
/I
L
= -5mA / -0.25mA
I
O
/I
L
= -10mA / -0.5mA
Input Current
I
L
-0.36
-0.18
-1.8
-0.88
-3.6
-0.88
-0.5
mA
V
I
= -5V
Output Current
DDA124EH
DDA144EH
DDA143EH
DDA114YH
DDA123JH
DDA114EH
I
O(OFF)
56
68
20
68
80
30
µA
V
CC
= -50V, V
I
= -0V
DC Current Gain
G
L
Gain-Bandwidth Product*
* Transistor - For Reference Only
f
T
250
V
O
= -5V, I
O
= -5mA
V
O
= -5V, I
O
= -5mA
V
O
= -5V, I
O
= -10mA
V
O
= -5V, I
O
= -10mA
V
O
= -5V, I
O
= -10mA
V
O
= -5V, I
O
= -5mA
MHz V
CE
= -10V, I
E
= -5mA, f = 100MHz
DDA (xxxx) H
Document number: DS30420 Rev. 6 - 2
3 of 6
www.diodes.com
June 2016
© Diodes Incorporated
DDA (xxxx) H
Typical Curves - DDA143EH
250
1
V
CE(SAT)
, COLLECTOR EMITTER VOLTAGE (V)
I
C
/I
B
= 10
P
d
, POWER DISSIPATION (mW)
200
75°C
0.1
-25°C
25°C
150
100
0.01
50
0
-50
0
50
100
T
A
, AMBIENT TEMPERATURE (°C)
Fig. 1 Derating Curve
150
0.001
0
10
40
20
30
I
C
, COLLECTOR CURRENT (mA)
Fig. 2 V
CE(SAT)
vs. I
C
50
1,000
12
f = 1MHz
10
h
FE
, DC CURRENT GAIN
C
OB
, CAPACITANCE (pF)
100
8
6
10
4
2
1
1
10
I
C
, COLLECTOR CURRENT (mA)
Fig. 3 DC Current Gain
100
0
0
10
15
25
5
20
V
R
, REVERSE BIAS VOLTAGE (V)
Fig. 4 Output Capacitance
30
100
75°C
10
V
O
= 0.2V
I
C
, COLLECTOR CURRENT (mA)
1
V
in
, INPUT VOLTAGE (V)
0
1
6
7
8
9
4
5
V
in
, INPUT VOLTAGE (V)
Fig. 5 Collector Current vs. Input Voltage
2
3
10
10
1
0.1
0.01
0.1
0
10
20
30
40
I
C
, COLLECTOR CURRENT (mA)
Fig. 6 Input Voltage vs. Collector Current
50
DDA (xxxx) H
Document number: DS30420 Rev. 6 - 2
4 of 6
www.diodes.com
June 2016
© Diodes Incorporated
DDA (xxxx) H
Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
SOT563
A
B
C
D
G
K
M
SOT563
Dim Min
Max Typ
A
0.15 0.30 0.20
B
1.10 1.25 1.20
C
1.55 1.70 1.60
D
-
-
0.50
G
0.90 1.10 1.00
H
1.50 1.70 1.60
K
0.55 0.60 0.60
L
0.10 0.30 0.20
M
0.10 0.18 0.11
All Dimensions in mm
H
L
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
SOT563
C2
C2
Z
G
C1
Y
X
Dimensions Value (in mm)
Z
2.2
G
1.2
X
0.375
Y
0.5
1.7
C1
0.5
C2
DDA (xxxx) H
Document number: DS30420 Rev. 6 - 2
5 of 6
www.diodes.com
June 2016
© Diodes Incorporated
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DDA143EH-7 Related Products

DDA143EH-7 DDA143TH-7 DDA123JH-7 DDA144EH-7
Description Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon, GREEN, PLASTIC PACKAGE-6 Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon, GREEN, PLASTIC PACKAGE-6 Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon, GREEN, PLASTIC PACKAGE-6 Small Signal Bipolar Transistor, 0.03A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon, GREEN, PLASTIC PACKAGE-6
Is it lead-free? Lead free Lead free Lead free Lead free
Is it Rohs certified? conform to conform to conform to conform to
Maker Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated
package instruction GREEN, PLASTIC PACKAGE-6 GREEN, PLASTIC PACKAGE-6 GREEN, PLASTIC PACKAGE-6 GREEN, PLASTIC PACKAGE-6
Contacts 6 6 6 6
Reach Compliance Code compliant compliant compli compli
ECCN code EAR99 EAR99 EAR99 EAR99
Factory Lead Time 19 weeks 19 weeks 19 weeks 19 weeks
Other features BUILT-IN BIAS RESISTOR RATIO 1 BUILT-IN BIAS RESISTOR BUILT-IN BIAS RESISTOR RATIO 21.36 BUILT-IN BIAS RESISTOR RATIO 1
Maximum collector current (IC) 0.1 A 0.1 A 0.1 A 0.03 A
Collector-emitter maximum voltage 50 V 50 V 50 V 50 V
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE) 20 100 80 68
JESD-30 code R-PDSO-F6 R-PDSO-F6 R-PDSO-F6 R-PDSO-F6
JESD-609 code e3 e3 e3 e3
Humidity sensitivity level 1 1 1 1
Number of components 2 2 2 2
Number of terminals 6 6 6 6
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 260 260 260
Polarity/channel type PNP PNP PNP PNP
Maximum power dissipation(Abs) 0.15 W 0.15 W 0.15 W 0.15 W
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
surface mount YES YES YES YES
Terminal surface Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn)
Terminal form FLAT FLAT FLAT FLAT
Terminal location DUAL DUAL DUAL DUAL
Maximum time at peak reflow temperature 40 40 40 40
Transistor component materials SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 250 MHz 250 MHz 250 MHz 250 MHz

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