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BDX33BBA

Description
10A, 80V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size130KB,6 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Download Datasheet Parametric View All

BDX33BBA Overview

10A, 80V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN

BDX33BBA Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerON Semiconductor
Parts packaging codeTO-220AB
package instructionPLASTIC, TO-220AB, 3 PIN
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)10 A
Collector-emitter maximum voltage80 V
ConfigurationDARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Minimum DC current gain (hFE)750
JESD-30 codeR-PSFM-T3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN LEAD
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)3 MHz
BDX33B, BDX33C (NPN)
BDX34B, BDX34C (PNP)
Darlington Complementary
Silicon Power Transistors
These devices are designed for general purpose and low speed
switching applications.
Features
http://onsemi.com
High DC Current Gain
h
FE
= 2500 (typ.) at I
C
= 4.0
Collector−Emitter Sustaining Voltage at 100 mAdc
V
CEO(sus)
= 80 Vdc (min)
BDX33B, BDX334B
= 100 Vdc (min)
BDX33C, BDX334C
Low Collector−Emitter Saturation Voltage
V
CE(sat)
= 2.5 Vdc (max) at I
C
= 3.0 Adc
BDX33B, 33C/34B, 34C
Monolithic Construction with Build−In Base−Emitter Shunt Resistors
Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
BDX33B, BDX34B
BDX33C, BDX34C
Collector−Base Voltage
BDX33B, BDX34B
BDX33C, BDX34C
Symbol
V
CEO
Value
80
100
80
100
5.0
10
15
0.25
70
0.56
−65
to +150
Unit
Vdc
DARLINGTON
10 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS
80−100 VOLTS, 65 WATTS
1
2
TO−220AB
CASE 221A−09
STYLE 1
3
V
CB
Vdc
Emitter−Base Voltage
Collector Current
Base Current
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Continuous
Peak
V
EB
I
C
I
B
P
D
T
J
, T
stg
Vdc
Adc
Adc
W
W/°C
°C
MARKING DIAGRAM
BDX3xyG
AY WW
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction−to−Case
Symbol
R
qJC
Max
1.78
Unit
°C/W
A
Y
WW
G
=
=
=
=
BDX3xy =
Device Code
x = 3 or 4
y = B or C
Assembly Location
Year
Work Week
Pb−Free Package
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
ORDERING INFORMATION
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
©
Semiconductor Components Industries, LLC, 2011
October, 2011
Rev. 13
1
Publication Order Number:
BDX33B/D
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