128Kx8 MONOLITHIC NOR FLASH
SMD 5962-96690**
WMF128K8-XXX5
FEATURES
Access Times of 50*, 60, 70, 90, 120, 150ns
Packaging
32 lead, Hermetic Ceramic, 0.400" SOJ (Package 101)
32 pin, Hermetic Ceramic, 0.600" DIP (Package 300)
32 lead, Flatpack (Package 220)
32 lead, Formed Flatpack (Package 221)
32 pin, Rectangular Ceramic Leadless Chip Carrier
(Package 601)
100,000 Erase/Program Cycles Minimum
Sector Erase Architecture
• 8 equal size sectors of 16KBytes each
• Any combination of sectors can be concurrently erased.
Also supports full chip erase
Organized as 128Kx8
•
•
•
•
•
Commercial, Industrial and Military Temperature Ranges
5 Volt Programming
Low Power CMOS
Embedded Erase and Program Algorithms
TTL Compatible Inputs and CMOS Outputs
Page Program Operation and Internal Program Control
Time.
This product is subject to change without notice.
Note: For programming information and waveforms refer to Flash Programming 1M5 Application
Note AN0036.
* The access time of 50ns is available in Industrial and Commercial temperature ranges only.
** For reference only. See table page 8.
PIN CONFIGURATION FOR WMF128K8-XXX5
32 DIP
32 CSOJ
32 Flatpack
PIN CONFIGURATION FOR WMF128K8-XCLX5
32 CLCC
Top View
A12
NC
A16
A15
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
V
SS
Top View
WE#
A15
A16
V
CC
NC
NC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
V
CC
WE#
NC
A14
A13
A8
A9
A11
OE#
A10
CS#
I/O7
I/O6
I/O5
I/O4
I/O3
4 3 2 1 32 31 30
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
5
29
6
28
7
27
8
26
9
25
10
24
11
23
12
22
13
21
14 15 16 17 18 19 20
I/O1
I/O2
V
SS
I/O3
I/O4
I/O5
I/O6
4325.11E-0816-ss-WMF128K8-XXX5
A14
A13
A8
A9
A11
OE#
A10
CS#
I/O7
PIN DESCRIPTION
A0-16
I/O0-7
CS#
OE#
WE#
V
CC
V
SS
Address Inputs
Data Input/Output
Chip Select
Output Enable
Write Enable
+5.0V Power
Ground
Mercury Corp. - Memory and Storage Solutions • (602) 437-1520 • www.mrcy.com
1
WMF128K8-XXX5
ABSOLUTE MAXIMUM RATINGS (1)
Parameter
Operating Temperature (Mil, Q)
Supply Voltage (V
CC
)
Signal Voltage Range (any pin except A9) (2)
Storage Temperature Range
Lead Temperature (soldering, 10 seconds)
Data Retention Mil Temp
Endurance (write/erase cycles)
A9 Voltage for sector protect (V
ID
) (3)
-55 to +125
-2.0 to +7.0
-2.0 to +7.0
-65 to +150
+300
10
100,000 min
-2.0 to +12.5
Unit
°C
V
V
°C
°C
years
cycles
V
RECOMMENDED OPERATING CONDITIONS
Parameter
Supply Voltage
Operating Temp. (Mil, Q)
Operating Temp. (Ind)
Operating Temp. (Com)
Symbol
V
CC
T
A
T
A
T
A
Min
4.5
-55
-40
0
Max
5.5
+125
+85
+70
Unit
V
°C
°C
°C
CAPACITANCE
T
A
= +25°C
Parameter
Address Input capacitance
Output Enable capacitance
Write Enable capacitance
Chip Select capacitance
Data I/O capacitance
Symbol
Conditions
C
AD
V
I/O
= 0 V, f = 1.0 MHz
C
OE
V
IN
= 0 V, f = 1.0 MHz
C
WE
V
IN
= 0 V, f = 1.0 MHz
C
CS
V
IN
= 0 V, f = 1.0 MHz
C
I/O
V
I/O
= 0 V, f = 1.0 MHz
Max
15
15
15
15
15
Unit
pF
pF
pF
pF
pF
NOTES:
1. Stresses above the absolute maximum rating may cause permanent damage to the device.
Extended operation at the maximum levels may degrade performance and affect reliability.
2. Minimum DC voltage on input or I/O pins is -0.5V. During voltage transitions, inputs may
overshoot V
SS
to -2.0 V for periods of up to 20ns. Maximum DC voltage on output and I/O pins
is V
CC
+ 0.5V. During voltage transitions, outputs may overshoot to Vcc + 2.0 V for periods of up
to 20ns.
3. Minimum DC input voltage on A9 pin is -0.5V. During voltage transitions, A9 may overshoot
Vss to -2V for periods of up to 20ns. Maximum DC input voltage on A9 is +12.5V which may
overshoot to 13.5 V for periods up to 20ns.
This parameter is guaranteed by design but not tested.
DC CHARACTERISTICS — CMOS COMPATIBLE
Parameter
Input Leakage Current
Output Leakage Current
V
CC
Active Current for Read (1)
V
CC
Active Current for Program or Erase (2)
V
CC
Standby Current
Input High Voltage
Input Low Voltage
Voltage for Auto Select and Sector Protect
Output Low Voltage
Output High Voltage
Output High Voltage
Low V
CC
Lock-Out Voltage
Symbol
I
LI
I
LO
I
CC1
I
CC2
I
CC3
V
IH
V
IL
V
ID
V
OL
V
OH1
V
OH2
V
LKO
Conditions
V
CC
= V
CC MAX
, V
IN
= GND to V
CC
V
CC
= V
CC MAX
, V
OUT
= GND to V
CC
CS# = V
IL
, OE# = V
IH
, V
CC
= V
CC MAX
, f = 5MHz
CS# = V
IL
, OE# = V
IH
, V
CC
= V
CC MAX
V
CC
= V
CC MAX
, CS# = V
CC
± 0.5V, OE# = V
IH
, f = 5MHz
Min
Max
10
10
35
50
1.6
V
CC
+ 0.3
+0.8
12.5
0.45
Unit
μA
μA
mA
mA
mA
V
V
V
V
V
V
V
2.0
-0.5
11.5
I
OL
= 8.0 mA, V
CC
= V
CC MIN
I
OH
= -2.5 mA, V
CC
= V
CC MIN
I
OH
= -100
μA,
V
CC
= V
CC MIN
0.85 x V
CC
V
CC
- 0.4
3.2
NOTES:
1. The I
CC
current is typically less than 2mA/MHz, with OE# at V
IH
.
2. I
CC
active while Embedded Algorithm (program or erase) is in progress.
AC TEST CIRCUIT
AC TEST CONDITIONS
Parameter
Input Pulse Levels
Input Rise and Fall
Input and Output Reference Level
Output Timing Reference Level
V
Z
≈ 1.5V
(Bipolar Supply)
I
OL
Current Source
Typ
VIL = 0, VIH = 3.0
5
1.5
1.5
Unit
V
ns
V
V
D.U.T.
C
eff
= 50 pf
NOTES:
I
OH
Current Source
V
Z
is programmable from -2V to +7V.
I
OL
& I
OH
programmable from 0 to 16mA.
Tester Impedance Z0 = 75
Ω.
V
Z
is typically the midpoint of V
OH
and V
OL
.
I
OL
& I
OH
are adjusted to simulate a typical resistive load circuit.
ATE tester includes jig capacitance.
Mercury Corp. - Memory and Storage Solutions • (602) 437-1520 • www.mrcy.com
2
4325.11E-0816-ss-WMF128K8-XXX5
WMF128K8-XXX5
AC CHARACTERISTICS – WRITE/ERASE/PROGRAM OPERATIONS, WE# CONTROLLED
Parameter
Write Cycle Time
Chip Select Setup Time
Write Enable Pulse Width
Address Setup Time
Data Setup Time
Data Hold Time
Address Hold Time
Chip Select Hold Time
Write Enable Pulse Width High
Duration of Byte Programming Operation (min)
Sector Erase Time
Read Recovery Time before Write
V
CC
Set-up Time
Chip Programming Time
Output Enable Setup Time
Output Enable Hold Time (1)
NOTES:
1. For Toggle and Data# Polling.
Symbol
t
AVAV
t
ELWL
t
WLWH
t
AVWH
t
DVWH
t
WHDX
t
WHAX
t
WHEH
t
WHWL
t
WHWH1
t
WHWH2
t
GHWL
t
WC
t
CS
t
WP
t
AS
t
DS
t
DH
t
AH
t
CH
t
WPH
-50
Min
50
0
25
0
25
0
40
0
20
14
2.2
0
50
0
10
Max
Min
60
0
30
0
30
0
45
0
20
14
2.2
0
50
0
10
-60
Max
Min
70
0
35
0
30
0
45
0
20
14
2.2
0
50
0
10
-70
Max
Min
90
0
45
0
45
0
45
0
20
14
2.2
0
50
0
10
-90
Max
60
60
60
60
t
VCS
t
OES
t
OEH
12.5
12.5
12.5
12.5
-120
Min Max
120
0
50
0
50
0
50
0
20
14
2.2
60
0
50
12.5
0
10
-150
Min Max
150
0
50
0
50
0
50
0
20
14
2.2
60
0
50
12.5
0
10
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
μs
sec
ns
μs
sec
ns
ns
AC CHARACTERISTICS – READ ONLY OPERATIONS
Parameter
Read Cycle Time
Address Access Time
Chip Select Access Time
OE# to Output Valid
Chip Select to Output High Z (1)
OE# High to Output High Z (1)
Output Hold from Address, CS# or OE# Change,
whichever is First
NOTES:
1. Guaranteed by design, but not tested
Symbol
t
AVAV
t
AVQV
t
ELQV
t
GLQV
t
EHQZ
t
GHQZ
t
AXQX
t
RC
t
ACC
t
CE
t
OE
t
DF
t
DF
t
OH
-50
Min
50
Max
50
50
25
20
20
0
0
Min
60
-60
Max
60
60
30
20
20
0
Min
70
-70
Max
70
70
35
20
20
0
Min
90
-90
Max
90
90
40
25
25
-120
Min Max
120
120
120
50
30
30
0
-150
Min Max
150
150
150
55
35
35
0
Unit
ns
ns
ns
ns
ns
ns
ns
AC CHARACTERISTICS – WRITE/ERASE/PROGRAM OPERATIONS,CS# CONTROLLED
Parameter
Write Cycle Time
WE# Setup Time
CS# Pulse Width
Address Setup Time
Data Setup Time
Data Hold Time
Address Hold Time
WE# Hold from WE# High
CS# Pulse Width High
Duration of Programming Operation
Duration of Erase Operation
Read Recovery before Write
Chip Programming Time
Symbol
t
AVAV
t
WLEL
t
ELEH
t
AVEL
t
DVEH
t
EHDX
t
ELAX
t
EHWH
t
EHEL
t
WHWH1
t
WHWH2
t
GHEL
t
WC
t
WS
t
CP
t
AS
t
DS
t
DH
t
AH
t
WH
t
CPH
-50
Min
50
0
25
0
25
0
40
0
20
14
2.2
0
12.5
60
-60
Max
Min
60
0
30
0
30
0
45
0
20
14
2.2
0
12.5
60
-70
Max
Min
70
0
35
0
30
0
45
0
20
14
2.2
0
12.5
60
-90
Max
Min
90
0
45
0
45
0
45
0
20
14
2.2
0
12.5
60
Max
-120
Min Max
120
0
50
0
50
0
50
0
20
14
2.2
0
12.5
60
-150
Min Max
150
0
50
0
50
0
50
0
20
14
2.2
0
12.5
60
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
μs
sec
ns
sec
Mercury Corp. - Memory and Storage Solutions • (602) 437-1520 • www.mrcy.com
3
4325.11E-0816-ss-WMF128K8-XXX5
WMF128K8-XXX5
PACKAGE 101 – 32 LEAD, CERAMIC SOJ
21.1 (0.830) ± 0.25 (0.010)
0.2 (0.008)
± 0.05 (0.002)
3.96 (0.156) MAX
0.89 (0.035)
Radius TYP
10.92 (0.430)
± 0.13 (0.005)
9.55 (0.376) ± 0.25 (0.010)
1.27 (0.050) ± 0.25 (0.010)
PIN 1 IDENTIFIER
1.27 (0.050) TYP
19.05 (0.750) TYP
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
PACKAGE 220 – 32 LEAD, CERAMIC FLATPACK
20.83 (0.820)
± 0.25 (0.010)
2.60 (0.102) MAX
PIN 1
IDENTIFIER
10.41 (0.410)
± 0.13 (0.005)
10.16 (0.400)
± 0.51 (0.020)
0.43 (0.017)
± 0.05 (0.002)
0.127 (0.005)
+ 0.05 (0.002)
– 0.025 (0.001)
1.27 (0.050) TYP
19.05 (0.750) TYP
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
Mercury Corp. - Memory and Storage Solutions • (602) 437-1520 • www.mrcy.com
4
4325.11E-0816-ss-WMF128K8-XXX5
WMF128K8-XXX5
PACKAGE 221 – 32 LEAD, FORMED CERAMIC FLATPACK
20.83 (0.820)
±0.25 (0.010)
3.35 (0.132)
MAX
0.127 (0.005)
+ 0.05 (0.002)
- 0.025 (0.001)
10.41 (0.410)
±0.13 (0.005)
+
+
13.47 (0.530)
±0.13 (0.005)
0.43 (0.017)
±0.05 (0.002)
0°/ -4°
0.63 (0.025) TYP
1.27 (0.050) TYP
19.05 (0.750) TYP
1.52 (0.060) TYP
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
PACKAGE 300 – 32 PIN, CERAMIC DIP, SINGLE CAVITY SIDE BRAZED
42.4 (1.670) ± 0.4 (0.016)
15.04 (0.592)
± 0.3 (0.012)
4.34 (0.171)
± 0.79 (0.031)
PIN 1 IDENTIFIER
3.175 (0.125) MIN
0.84 (0.033)
± 0.4 (0.014)
2.54 (0.100)
TYP
1.27 (0.050)
TYP
0.46 (0.018)
± 0.05 (0.002)
0.25 (0.010)
± 0.05 (0.002)
15.24 (0.600)
± 0.25 (0.010)
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
Mercury Corp. - Memory and Storage Solutions • (602) 437-1520 • www.mrcy.com
5
4325.11E-0816-ss-WMF128K8-XXX5
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