ZTX757STOA datasheet, PDF - EEWORLD Datasheet

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ZTX757STOA: DescriptionSmall Signal Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, TO-92 COMPATIBLE, E-LINE PACKAGE-3; CategoryDiscrete semiconductor The transistor; File Size78KB，2 Pages; ManufacturerDiodes Incorporated; Environmental Compliance

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ZTX757STOA Overview

Small Signal Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, TO-92 COMPATIBLE, E-LINE PACKAGE-3

ZTX757STOA Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Diodes Incorporated
Parts packaging code	TO-92
package instruction	IN-LINE, R-PSIP-W3
Contacts	3
Reach Compliance Code	not_compliant
ECCN code	EAR99
Maximum collector current (IC)	0.5 A
Collector-emitter maximum voltage	300 V
Configuration	SINGLE
Minimum DC current gain (hFE)	50
JESD-30 code	R-PSIP-W3
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	PNP
Certification status	Not Qualified
surface mount	NO
Terminal surface	Matte Tin (Sn)
Terminal form	WIRE
Terminal location	SINGLE
Maximum time at peak reflow temperature	40
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	30 MHz

ZTX757STOA Preview

PNP SILICON PLANAR MEDIUM POWER

HIGH VOLTAGE TRANSISTORS

ISSUE 2 JULY 94

FEATURES

* 300 Volt V

CEO

* 0.5 Amp continuous current

* P

tot

= 1 Watt

ZTX756

ZTX757

C

B

E

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Peak Pulse Current

Continuous Collector Current

Power Dissipation at T

amb

=25°C

Operating and Storage Temperature

Range

SYMBOL

V

CBO

V

CEO

V

EBO

I

CM

I

C

P

tot

T

j

:T

stg

ZTX756

-200

-5

-1

-0.5

1

E-Line

TO92 Compatible

ZTX757

-300

UNIT

V

A

W

°C

-55 to +200

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated).

PARAMETER

SYMBOL

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CBO

I

EBO

V

CE(sat)

V

BE(sat)

V

BE(on)

h

FE

f

T

C

obo

50

40

30

20

3-265

ZTX756

ZTX757

UNIT

V

-100

-0.5

-1.0

50

40

30

20

MHz

pF

nA

V

CONDITIONS.

MIN.

Collector-Base

Breakdown Voltage

Collector-Emitter

Breakdown Voltage

Emitter-Base

Breakdown Voltage

Collector Cut-Off

Current

Emitter Cut-Off

Current

Collector-Emitter

Saturation Voltage

Base-Emitter

Saturation Voltage

Base-Emitter

Turn-On Voltage

Static Forward

Current Transfer

Ratio

Transition

Frequency

Output Capacitance

-200

-5

-100

-0.5

-1.0

MAX. MIN.

-300

-5

MAX.

I

C

=-100

µ

A, I

E

=0

I

C

=-10mA, I

B

=0*

I

E

=-100

µ

A, I

C

=0

V

CB

=-160V, I

E

=0

V

CB

=-200V, I

E

=0

V

EB

=-3V, I

C

=0

I

C

=-100mA,

I

B

=-10mA*

I

C

=-100mA,

I

B

=-10mA*

IC=-100mA, V

CE

=-5V*

I

C

=-100mA, V

CE

=-5V*

I

C

=-10mA, V

CE

=-5V*

I

C

=-10mA, V

CE

=-20V

f=20MHz

V

CB

=-20V, f=1MHz

ZTX756

ZTX757

TYPICAL CHARACTERISTICS

250

td

tr

ts tf

µs µs

4

1.6

1.4

3

1.2

1.0

2

0.8

0.6

1

0.4

0.2

tf

tr

0.1

ts

td

1

td

tr

tf

ts

I

B1

=I

B2

=I

C

/10

V

CE

=10V

V

CE(sat)

- (mV)

I

C

/I

B

=10

200

150

100

0.0001

0.001

0.01

0.1

1

Switching time

0

0.01

I

C

-

Collector Current (Amps)

I

C

-

Collector Current (Amps)

V

CE(sat)

v I

C

Switching Speeds

100

1.2

h

FE

- Normalised Gain (%)

80

60

V

CE

=5V

1.0

V

BE(sat)

- (Volts)

I

C

/I

B

=10

0.8

40

0.6

20

0.4

0

0.0001

0.001

0.01

0.1

1

0.0001

0.001

0.01

0.1

1

I

C

-

Collector Current (Amps)

I

C

-

Collector Current (Amps)

h

FE

v I

C

1.0

1.2

V

BE(sat)

v I

C

Single Pulse Test at T

amb

=25°C

1.0

I

C

- Collector Current (Amps)

V

BE

- (Volts)

V

CE

=5V

0.8

0.1

0.6

0.01

D.C.

1s

100ms

10ms

1.0ms

300µs

0.4

0.0001

0.001

0.01

0.1

1

ZTX756

ZTX757

0.001

1

10

100

1000

I

C

-

Collector Current (Amps)

V

CE

-

Collector Voltage (Volts)

V

BE(on)

v I

C

Safe Operating Area

3-266

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ZTX757STOA Related Products

	ZTX757STOA	ZTX757	ZTX757STZ	ZTX757STOB
Description	Small Signal Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, TO-92 COMPATIBLE, E-LINE PACKAGE-3	Small Signal Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, TO-92 COMPATIBLE, E-LINE PACKAGE-3	Small Signal Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, TO-92 COMPATIBLE, E-LINE PACKAGE-3	500mA, 300V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 COMPATIBLE, E-LINE PACKAGE-3
Is it Rohs certified?	conform to	conform to	conform to	conform to
Maker	Diodes Incorporated	Diodes Incorporated	Diodes Incorporated	Diodes Incorporated
Parts packaging code	TO-92	TO-92	TO-92	TO-92
package instruction	IN-LINE, R-PSIP-W3	IN-LINE, R-PSIP-W3	IN-LINE, R-PSIP-W3	TO-92 COMPATIBLE, E-LINE PACKAGE-3
Contacts	3	3	3	3
Reach Compliance Code	not_compliant	compliant	compliant	unknown
ECCN code	EAR99	EAR99	EAR99	-
Maximum collector current (IC)	0.5 A	0.5 A	0.5 A	-
Collector-emitter maximum voltage	300 V	300 V	300 V	-
Configuration	SINGLE	SINGLE	SINGLE	-
Minimum DC current gain (hFE)	50	50	50	-
JESD-30 code	R-PSIP-W3	R-PSIP-W3	R-PSIP-W3	-
JESD-609 code	e3	e3	e3	-
Number of components	1	1	1	-
Number of terminals	3	3	3	-
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	-
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	-
Package form	IN-LINE	IN-LINE	IN-LINE	-
Peak Reflow Temperature (Celsius)	260	260	260	-
Polarity/channel type	PNP	PNP	PNP	-
Certification status	Not Qualified	Not Qualified	Not Qualified	-
surface mount	NO	NO	NO	-
Terminal surface	Matte Tin (Sn)	Matte Tin (Sn)	Matte Tin (Sn)	-
Terminal form	WIRE	WIRE	WIRE	-
Terminal location	SINGLE	SINGLE	SINGLE	-
Maximum time at peak reflow temperature	40	40	40	-
Transistor component materials	SILICON	SILICON	SILICON	-
Nominal transition frequency (fT)	30 MHz	30 MHz	30 MHz	-

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