PMEG3002TV
0.2 A very low V
F
MEGA Schottky barrier dual rectifier in
SOT666 package
Rev. 02 — 15 January 2010
Product data sheet
1. Product profile
1.1 General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier dual rectifier
with an integrated guard ring for stress protection, encapsulated in a SOT666 ultra small
and flat lead Surface Mounted Device (SMD) plastic package.
Table 1.
Product overview
Package
NXP
PMEG3002TV
SOT666
JEITA
-
dual isolated
Configuration
Type number
1.2 Features
Forward current:
≤
0.2 A
Reverse voltage:
≤
30 V
Very low forward voltage
Ultra small and flat lead SMD plastic package
1.3 Applications
Low voltage rectification
High efficiency DC-to-DC conversion
Switch mode power supply
Inverse polarity protection
Low power consumption applications
1.4 Quick reference data
Table 2.
Symbol
Per diode
I
F
V
R
V
F
[1]
[2]
Quick reference data
Parameter
forward current
reverse voltage
forward voltage
I
F
= 200 mA
[2]
Conditions
T
amb
≤
25
°C
[1]
Min
-
-
-
Typ
-
-
420
Max
0.2
30
480
Unit
A
V
mV
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Pulse test: t
p
≤
300
μs; δ ≤
0.02.
NXP Semiconductors
PMEG3002TV
0.2 A very low V
F
MEGA Schottky barrier dual rectifier
2. Pinning information
Table 3.
Pin
1
2
3
4
5
6
Pinning
Description
anode (diode 1)
not connected
cathode (diode 2)
anode (diode 2)
not connected
cathode (diode 1)
1
2
3
1
2
3
006aaa440
Simplified outline
6
5
4
Symbol
6
5
4
3. Ordering information
Table 4.
Ordering information
Package
Name
PMEG3002TV
-
Description
plastic surface mounted package; 6 leads
Version
SOT666
Type number
4. Marking
Table 5.
Marking codes
Marking code
2M
Type number
PMEG3002TV
PMEG3002TV_2
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 15 January 2010
2 of 10
NXP Semiconductors
PMEG3002TV
0.2 A very low V
F
MEGA Schottky barrier dual rectifier
5. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Per diode
V
R
I
F
I
FRM
I
FSM
P
tot
reverse voltage
forward current
non-repetitive peak forward
current
total power dissipation
T
amb
≤
25
°C
square wave;
t
p
= 8 ms
T
amb
≤
25
°C
[1]
Conditions
Min
-
-
-
[1]
Max
30
0.2
1
2.5
200
300
300
400
150
+150
+150
Unit
V
A
A
A
mW
mW
mW
mW
°C
°C
°C
repetitive peak forward current t
p
≤
1 ms;
δ ≤
0.25
-
-
-
-
-
-
−65
−65
[1]
[2]
Per device
P
tot
T
j
T
amb
T
stg
[1]
[2]
total power dissipation
junction temperature
ambient temperature
storage temperature
T
amb
≤
25
°C
[1]
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
2
.
6. Thermal characteristics
Table 7.
Symbol
Per device
R
th(j-a)
R
th(j-sp)
[1]
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
thermal resistance from
junction to solder point
Conditions
in free air
[1][2]
[1][3]
[4]
Min
-
-
-
Typ
-
-
-
Max
416
318
195
Unit
K/W
K/W
K/W
For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse
power losses P
R
are a significant part of the total power losses. Nomograms for determining the reverse
power losses P
R
and I
F(AV)
rating are available on request.
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
2
.
Soldering point of cathode tab.
[2]
[3]
[4]
PMEG3002TV_2
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 15 January 2010
3 of 10
NXP Semiconductors
PMEG3002TV
0.2 A very low V
F
MEGA Schottky barrier dual rectifier
7. Characteristics
Table 8.
Characteristics
T
amb
= 25
°
C unless otherwise specified.
Symbol
Per diode
V
F
forward voltage
I
F
= 0.1 mA
I
F
= 1 mA
I
F
= 10 mA
I
F
= 100 mA
I
F
= 200 mA
I
R
reverse current
V
R
= 10 V
V
R
= 30 V
V
R
= 10 V; T
amb
= 100
°C
C
d
[1]
[1]
Parameter
Conditions
Min
Typ
Max
Unit
-
-
-
-
-
-
-
-
-
130
190
255
355
420
3
10
400
20
190
250
300
400
480
10
30
-
25
mV
mV
mV
mV
mV
μA
μA
μA
pF
diode capacitance
Pulse test: t
p
≤
300
μs; δ ≤
0.02.
V
R
= 1 V; f = 1 MHz
PMEG3002TV_2
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 15 January 2010
4 of 10
NXP Semiconductors
PMEG3002TV
0.2 A very low V
F
MEGA Schottky barrier dual rectifier
10
3
I
F
(mA)
10
2
(1)
(2)
006aaa660
I
R
(μA)
10
4
(1)
006aaa661
10
3
10
2
10
1
(2)
(3)
(4)
10
10
−1
(3) (4)
(5)
1
10
−2
10
−3
(5)
10
−1
0
0.2
0.4
V
F
(V)
0.6
10
−4
0
5
10
15
20
25
30
V
R
(V)
(1) T
amb
= 125
°C
(2) T
amb
= 100
°C
(3) T
amb
= 85
°C
(4) T
amb
= 25
°C
(5) T
amb
=
−40 °C
(1) T
amb
= 125
°C
(2) T
amb
= 100
°C
(3) T
amb
= 85
°C
(4) T
amb
= 25
°C
(5) T
amb
=
−40 °C
Fig 1.
Forward current as a function of forward
voltage; typical values
40
C
d
(pF)
30
Fig 2.
Reverse current as a function of reverse
voltage; typical values
001aaa353
20
10
0
0
10
20
V
R
(V)
30
T
amb
= 25
°C;
f = 1 MHz
Fig 3.
Diode capacitance as a function of reverse voltage; typical values
PMEG3002TV_2
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 15 January 2010
5 of 10
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