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UF802F

Description
Rectifier Diode, 1 Element, 8A, 200V V(RRM)
CategoryDiscrete semiconductor    diode   
File Size124KB,2 Pages
ManufacturerGood-Ark
Environmental Compliance
Suzhou Gotech is a complete and comprehensive manufacturer of design, manufacturing, packaging and sales in the domestic semiconductor discrete device diode industry. From the independent development of front-end chips to various packaging technologies of back-end finished products, it has formed a complete industrial chain. The main products include leadless integrated circuit products and discrete device products with the latest packaging technology, automotive rectifier diodes, power modules, rectifier diode chips, silicon rectifier diodes, switching diodes, Zener diodes, micro bridge piles, military fuses, photovoltaic bypass modules, etc., with a total of more than 50 series and more than 1,500 varieties. The products are widely used in many fields such as aerospace, automobiles, green lighting, IT, household appliances and power supply devices for large equipment. Design and develop silver paste for solar cells and various electronic pastes, and develop and mass produce various new sensors in the field of the Internet of Things.
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UF802F Overview

Rectifier Diode, 1 Element, 8A, 200V V(RRM)

UF802F Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerGood-Ark
Reach Compliance Codecompliant
ConfigurationSINGLE
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1 V
Maximum non-repetitive peak forward current125 A
Number of components1
Maximum operating temperature150 °C
Maximum output current8 A
Maximum repetitive peak reverse voltage200 V
Maximum reverse recovery time0.05 µs
surface mountNO

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UF800F thru UF808F
Isolation Glass Passivated High Efficient Rectifiers
Reverse Voltage 50 to 800 Volts Forward Current 8.0 Amperes
Features
Plastic package has Underwriters Laboratory Flammability
Classification 94V-O utilizing Flame Retardant Epoxy Molding
Compound.
Exceeds environmental standards of MIL-S-19500/228
Low power loss, high efficiency
Low forwrd voltge, high current capability
High surge capacity.
Ultra fast recovery times, hgh voltage
Pb free product are availabel: 99% Sn above can meet RoHS
environment substance directive request
ITO-220AC
Mechanical Data
Case: ITO-220AC full molded plastic package
Terminals: Lead solderable per MIL-STD-202, Method 208
Polarity: As marked.
Standard packaging: Any
Weight: 0.08 ounces, 2.24 grams.
Maximum Ratings and Electrical Characteristics
Ratings at 25
o
C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz,
resistive or inductive load. For capacitive load, derate current by 20%
Parameter
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current at T
C
=100
o
C
Peak forward surge current 8.3ms single half sine-wave
superimposed on rated load (JEDEC Method)
Maximum instantaneous forward voltage at 8.0A
Maximum DC reverse current
at rated DC blocking voltage
Maximum reverse recovery time at
I
F
=0.5A, I
R
=1.0A, I
rr
=0.25A (Note 1)
Typical junction capacitance at 4.0V, 1MHz
Typical thermal resistance (Note 2)
Operating junction and storage temperature range
@T
A
=25
o
C
@T
A
=125
o
C
Symbol
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
t
rr
C
J
R
θ
JC
T
J
, T
STG
50
80.0
5.0
-55 to +150
1.0
10.0
500
100
50.0
o
U F 800F
50
35
50
U F 801F
100
70
100
U F 802F
200
140
200
U F 803F
300
210
300
8.0
125.0
1.3
U F 804F
400
280
400
U F 806F
600
420
600
U F 808F
800
560
800
Unit
Volts
Volts
Volts
Amps
Amps
1.7
Volts
uA
nS
pF
C/W
o
C
Notes:
1. Reverse Recovery Test Conditions: I
F
=.5A, I
R
=1A, I
rr
=.25A.
2. Thermal resistance from Junction to ambient and from junction to lead 0.375" (9.5mm) P.C.B mounted.
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