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30S10

Description
Rectifier Diode, 1 Phase, 1 Element, 3A, 1000V V(RRM), Silicon, T-18, 2 PIN
CategoryDiscrete semiconductor    diode   
File Size90KB,2 Pages
ManufacturerMicro Commercial Components (MCC)
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30S10 Overview

Rectifier Diode, 1 Phase, 1 Element, 3A, 1000V V(RRM), Silicon, T-18, 2 PIN

30S10 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerMicro Commercial Components (MCC)
package instructionT-18, 2 PIN
Contacts2
Reach Compliance Codecompliant
ECCN codeEAR99
applicationMEDIUM POWER
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeO-PALF-W2
JESD-609 codee0
Humidity sensitivity level1
Maximum non-repetitive peak forward current80 A
Number of components1
Phase1
Number of terminals2
Maximum output current3 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage1000 V
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED

30S10 Preview

MCC
Features
  omponents
20736 Marilla
Street Chatsworth

  !"#
$ %    !"#
30S1
thru
30S10
3 Amp
Medium Power
Silicon Rectifier
50 - 1000 Volts
T-18
Glass Passivated Chip
Economical Series
High Current Capability
High Surge Current Capability
Peak Reverse Voltages Through 1000 Volts
Maximum Ratings
Operating Temperature: -55°C to +150°C
Storage Temperature: -55°C to +150°C
MCC
Catalog
Number
Device
Marking
Maximum
Reccurrent
Peak
Reverse
Voltage
100V
200V
300V
400V
500V
600V
800V
1000V
Maximum
RMS
Voltage
Maximum
DC
Blocking
Voltage
100V
200V
300V
400V
500V
600V
800V
1000V
D
30S1
30S2
30S3
30S4
30S5
30S6
30S8
30S10
---
---
---
---
---
---
---
---
70V
140V
210V
280V
350V
420V
560V
700V
A
Cathode
Mark
B
Electrical Characteristics @ 25°C Unless Otherwise Specified
Average Forward
Current
Peak Forward Surge
Current
Maximum
Instantaneous
Forward Voltage
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
Typical Junction
Capacitance
I
F(AV)
I
FSM
3.0A
80A
T
A
= 100°C
8.3ms, half sine
D
C
V
F
1.0V
5µA
10µA
100pF
I
FM
= 3.0A;
T
J
= 25°C*
T
J
= 25°C
T
J
= 100°C
Measured at
1.0MHz, V
R
=4.0V
DIM
A
B
C
D
INCHES
MIN
.330
.130
.038
1.00
DIMENSIONS
MM
MIN
8.39
3.31
0.97
25.40
I
R
C
J
MAX
.350
.145
.042
---
MAX
8.89
3.68
1.06
---
NOTE
*Pulse test: Pulse width 300
µsec,
Duty cycle 1%
Revision: 3
www.mccsemi.com
2002/12/31
30S1 thru 30S10
Figure 1
Typical Forward Characteristics
200
100
60
40
20
Amps
10
6
4
2
25°C
1
.6
.4
.2
.1
.4
.6
0.8
Volts
Instantaneous Forward Current - Amperes
versus
Instantaneous Forward Voltage - Volts
1.0
1.2
1.4
100
60
40
20
10
6
Figure 3
Maximum Non-Repetitive Forward Surge Current
120
100
80
60
Amps
40
20
5
0
4
2
T
J
=100°C
µAmps
1
.6
.4
.2
.1
.06
1
2
4
6
8 10
Cycles
.02
Peak Forward Surge Current - Amperes
versus
Number Of Cycles At 60Hz - Cycles
.01
20
40
60 80 100
.04
T
J
=25°C
0
Amps
2
4
6
MCC
Figure 2
Forward Derating Curve
5
3
1
Single Phase, Half Wave
60Hz Resistive or Inductive Load
0
50
75
100
125
150
175
°C
Average Forward Rectified Current - Amperes
versus
Ambient Temperature -
°C
Figure 4
Typical Reverse Characteristics
20
40
60
80
Volts
100
120
140
Instantaneous Reverse Leakage Current - MicroAmperes
versus
Percent Of Rated Peak Reverse Voltage - Volts
Revision: 3
www.mccsemi.com
2002/12/31

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30S10 30S3 30S1 30S4
Description Rectifier Diode, 1 Phase, 1 Element, 3A, 1000V V(RRM), Silicon, T-18, 2 PIN Rectifier Diode, 1 Phase, 1 Element, 3A, 300V V(RRM), Silicon, T-18, 2 PIN Rectifier Diode, 1 Phase, 1 Element, 3A, 100V V(RRM), Silicon, T-18, 2 PIN Rectifier Diode, 1 Phase, 1 Element, 3A, 400V V(RRM), Silicon, T-18, 2 PIN
Is it Rohs certified? incompatible incompatible incompatible incompatible
Maker Micro Commercial Components (MCC) Micro Commercial Components (MCC) Micro Commercial Components (MCC) Micro Commercial Components (MCC)
package instruction T-18, 2 PIN T-18, 2 PIN O-PALF-W2 T-18, 2 PIN
Contacts 2 2 2 2
Reach Compliance Code compliant compliant compliant compliant
ECCN code EAR99 EAR99 EAR99 EAR99
application MEDIUM POWER MEDIUM POWER MEDIUM POWER MEDIUM POWER
Shell connection ISOLATED ISOLATED ISOLATED ISOLATED
Configuration SINGLE SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
JESD-30 code O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2
JESD-609 code e0 e0 e0 e0
Maximum non-repetitive peak forward current 80 A 80 A 80 A 80 A
Number of components 1 1 1 1
Phase 1 1 1 1
Number of terminals 2 2 2 2
Maximum output current 3 A 3 A 3 A 3 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND ROUND ROUND
Package form LONG FORM LONG FORM LONG FORM LONG FORM
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED 240 NOT SPECIFIED
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 1000 V 300 V 100 V 400 V
surface mount NO NO NO NO
Terminal surface Tin/Lead (Sn/Pb) TIN LEAD Tin/Lead (Sn/Pb) TIN LEAD
Terminal form WIRE WIRE WIRE WIRE
Terminal location AXIAL AXIAL AXIAL AXIAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
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