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TIP41BAK

Description
TRANSISTOR 6 A, 80 V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN, BIP General Purpose Power
CategoryDiscrete semiconductor    The transistor   
File Size132KB,7 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Download Datasheet Parametric View All

TIP41BAK Overview

TRANSISTOR 6 A, 80 V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN, BIP General Purpose Power

TIP41BAK Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerON Semiconductor
Parts packaging codeTO-220AB
package instructionPLASTIC, TO-220AB, 3 PIN
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)6 A
Collector-emitter maximum voltage80 V
ConfigurationSINGLE
Minimum DC current gain (hFE)15
JESD-30 codeR-PSFM-T3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN LEAD
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)3 MHz
TIP41G, TIP41AG, TIP41BG,
TIP41CG (NPN),
TIP42G, TIP42AG, TIP42BG,
TIP42CG (PNP)
Complementary Silicon
Plastic Power Transistors
Designed for use in general purpose amplifier and switching
applications.
Features
http://onsemi.com
Epoxy Meets UL 94 V−0 @ 0.125 in
These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
TIP41G, TIP42G
TIP41AG, TIP42AG
TIP41BG, TIP42BG
TIP41CG, TIP42CG
Collector−Base Voltage
TIP41G, TIP42G
TIP41AG, TIP42AG
TIP41BG, TIP42BG
TIP41CG, TIP42CG
Emitter−Base Voltage
Collector Current − Continuous
Collector Current − Peak
Base Current
Total Power Dissipation
@ T
C
= 25°C
Derate above 25°C
Total Power Dissipation
@ T
A
= 25°C
Derate above 25°C
Unclamped Inductive Load Energy
(Note 1)
Operating and Storage Junction,
Temperature Range
ESD − Human Body Model
ESD − Machine Model
Symbol
V
CEO
40
60
80
100
V
CB
40
60
80
100
V
EB
I
C
I
CM
I
B
P
D
65
0.52
P
D
2.0
0.016
E
T
J
, T
stg
HBM
MM
62.5
– 65 to +150
3B
C
W
W/°C
mJ
°C
V
V
W
W/°C
5.0
6.0
10
2.0
Vdc
Adc
Adc
Adc
Vdc
Value
Unit
Vdc
6 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS
40−60−80−100 VOLTS,
65 WATTS
PNP
COLLECTOR
2,4
NPN
COLLECTOR
2,4
1
BASE
3
EMITTER
4
1
BASE
3
EMITTER
TO−220
CASE 221A
STYLE 1
1
2
3
MARKING DIAGRAM
TIP4xxG
AYWW
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. I
C
= 2.5 A, L = 20 mH, P.R.F. = 10 Hz, V
CC
= 10 V, R
BE
= 100
W.
TIP4xx
xx
A
Y
WW
G
= Device Code
= 1, 1A, 1B, 1C
2, 2A, 2B, 2C
= Assembly Location
= Year
= Work Week
= Pb−Free Package
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2013
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
1
September, 2013 − Rev. 10
Publication Order Number:
TIP41A/D
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