Small Signal Field-Effect Transistor, 0.2A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
| Parameter Name | Attribute value |
| Maker | Calogic |
| package instruction | SMALL OUTLINE, R-PDSO-G3 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Configuration | SINGLE |
| Minimum drain-source breakdown voltage | 50 V |
| Maximum drain current (ID) | 0.2 A |
| Maximum drain-source on-resistance | 3.5 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| Maximum feedback capacitance (Crss) | 8 pF |
| JESD-30 code | R-PDSO-G3 |
| Number of components | 1 |
| Number of terminals | 3 |
| Operating mode | ENHANCEMENT MODE |
| Maximum operating temperature | 150 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| Polarity/channel type | N-CHANNEL |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal form | GULL WING |
| Terminal location | DUAL |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |


| BSS138T2 | BSS138T1 | |
|---|---|---|
| Description | Small Signal Field-Effect Transistor, 0.2A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Small Signal Field-Effect Transistor, 0.2A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
| Maker | Calogic | Calogic |
| package instruction | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 |
| Reach Compliance Code | unknown | unknown |
| ECCN code | EAR99 | EAR99 |
| Configuration | SINGLE | SINGLE |
| Minimum drain-source breakdown voltage | 50 V | 50 V |
| Maximum drain current (ID) | 0.2 A | 0.2 A |
| Maximum drain-source on-resistance | 3.5 Ω | 3.5 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| Maximum feedback capacitance (Crss) | 8 pF | 8 pF |
| JESD-30 code | R-PDSO-G3 | R-PDSO-G3 |
| Number of components | 1 | 1 |
| Number of terminals | 3 | 3 |
| Operating mode | ENHANCEMENT MODE | ENHANCEMENT MODE |
| Maximum operating temperature | 150 °C | 150 °C |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | RECTANGULAR | RECTANGULAR |
| Package form | SMALL OUTLINE | SMALL OUTLINE |
| Polarity/channel type | N-CHANNEL | N-CHANNEL |
| Certification status | Not Qualified | Not Qualified |
| surface mount | YES | YES |
| Terminal form | GULL WING | GULL WING |
| Terminal location | DUAL | DUAL |
| transistor applications | SWITCHING | SWITCHING |
| Transistor component materials | SILICON | SILICON |