NPN Transistor
BC846A/B-BC847A/B/C
BC848A/B/C- BC849B/C-BC850B/C
List
Formosa MS
List................................................................................................. 1
Package outline............................................................................... 2
Features.......................................................................................... 2
Mechanical data............................................................................... 2
Maximum ratings ............................................................................. 2~3
Rating and characteristic curves........................................................ 4~5
Pinning information........................................................................... 6
Marking........................................................................................... 6
Suggested solder pad layout............................................................. 6
Packing information.......................................................................... 7
Reel packing.................................................................................... 8
Suggested thermal profiles for soldering processes............................. 8
High reliability test capabilities.......................................................... 9
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
Issued Date
2009/08/10
Revised Date
2011/07/21
Revision
C
Page.
9
Page 1
DS-231154
NPN Transistor
BC846A/B-BC847A/B/C
BC848A/B/C- BC849B/C-BC850B/C
General Purpose Transistors
NPN Silicon
Features
0.045 (1.15)
Formosa MS
Package outline
SOT-23
•
Moisture Sensitivity Level: 1
•
ESD Rating
–
Human Body Model:
>4000
V,Machine Model:
>400
V
•
Epitaxial plana chip construction
• Ideal for medium power application and switching
•
As complementary type, the PNP transistor BC856A is
recommended.
•
Capable of 225mW power dissipation.
•
Lead-free parts for green partner, exceeds environmental
standards of MIL-STD-19500 /228
•
Suffix "-H" indicates Halogen-free part, ex.BC846A-H.
0.034 (0.85)
0.020 (0.50)
(C)
0.120 (3.04)
0.110 (2.80)
.084(2.10)
.068(1.70)
(B)
(A)
0.063 (1.60)
0.047 (1.20)
0.108 (2.75)
0.083 (2.10)
0.027 (0.67)
0.013 (0.32)
0.007 (0.18)
0.012 (0.30)
Mechanical data
0.051 (1.30)
0.035 (0.89)
•
Epoxy:UL94-V0 rated flame retardant
•
Case : Molded plastic, SOT-23
•
Terminals : Solder plated, solderable per
MIL-STD-750, Method 2026
Dimensions in inches and (millimeters)
•
Mounting Position : Any
•
Weight : Approximated 0.008 gram
Maximum ratings
(AT T =25 C unless otherwise noted)
o
A
Rating
Collector-Base voltage
BC846
BC847, BC850
BC848, BC849
BC846
BC847, BC850
BC848, BC849
BC846
BC847, BC850
BC848, BC849
Rating
Symbol
V
CBO
Value
80
50
30
65
45
30
6.0
6.0
5.0
100
0.003 (0.09)
UNIT
Vdc
Collector-Emitter voltage
V
CEO
Vdc
Emitter-Base voltage
V
EBO
I
C
Vdc
mAdc
Collector current-Continuous
Thermal Characteristics
PARAMETER
Total device dissipation FR-5 board T
A
= 25
O
C
(1)
Derate above 25
O
C
Thermal resistance
Total device dissipation Aluminum
substrate(2)
Thermal resistance
Operating temperature
Storage temperature
1.FR-5 = 1.0 x 0.75 x0.062 in.
2. Aluminum=0.4 x 0.3 x 0.024 in., 99.5% aluminum
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TEL:886-2-22696661
FAX:886-2-22696141
CONDITIONS
Symbol
P
D
MIN.
TYP.
MAX. UNIT
225
1.8
mW
mW/
O
C
O
Junction to ambient
T
A
= 25 C
Derate above 25
O
C
Junction to ambient
O
R
θJA
P
D
556
300
2.4
C/W
mW
O
mW/ C
O
R
θ
JA
T
J
T
STG
-55
-65
417
+150
+150
C/W
o
C
C
o
Document ID
Issued Date
2009/08/10
Revised Date
2011/07/21
Revision
C
Page.
9
Page 2
DS-231154
NPN Transistor
BC846A/B-BC847A/B/C
BC848A/B/C- BC849B/C-BC850B/C
Electrical characteristics
(AT T =25 C unless otherwise noted)
o
A
Formosa MS
MIN.
80
50
30
65
45
30
6.0
6.0
5.0
80
50
30
15
5.0
TYP.
MAX. UNIT
V
Off characteristics
PARAMETER
Collector-Base breakdown voltage
I
c
= 10uA
CONDITIONS
Symbol
BC846A,B
BC847A,B,C BC850B,C V
(BR)CBO
BC848A,B,C BC849B,C
BC846A,B
BC847A,B,C BC850B,C V
(BR)CEO
BC848A,B,C BC849B,C
BC846A,B
BC847A,B,C BC850B,C V
(BR)EBO
BC848A,B,C BC849B,C
BC846A,B
BC847A,B,C BC850B,C V
(BR)CES
BC848A,B,C BC849B,C
O
Collector-Emitter breakdown voltage
I
c
= 10mA
V
Emitter-Base breakdown voltage
I
E
= 1.0uA
V
Collector-Emitter breakdown voltage
I
C
= 10uA, V
EB
= 0
V
Collector cutoff current
V
CB
= 30V
V
CB
= 30V, T
A
= 150 C
I
CBO
nA
mA
On characteristics
PARAMETER
DC current gain( I
c
= 10uA, V
CE
= 5.0V )
CONDITIONS
BC846A, BC847A, BC848A
BC846B, BC847B, BC848B
BC847C, BC848C
DC current gain( I
c
= 2.0mA, V
CE
= 5.0V )
BC846A, BC847A, BC848A
BC846B, BC847B, BC848B
BC849B, BC850B
BC847C, BC848C, BC849C, BC850C
I
c
= 10mA, I
B
= 0.5mA
I
c
= 100mA, I
B
= 5.0mA
Base-Emitter saturation voltage
I
c
= 10mA, I
B
= 0.5mA
I
c
= 100mA, I
B
= 5.0mA
Base-Emitter on voltage
I
c
= 2.0mA, V
CE
= 5.0V
I
c
= 10mA, V
CE
= 5.0V
V
BE(on)
580
V
BE(sat)
-0.7
-0.9
660
700
770
V
h
FE
110
200
420
V
CE(sat)
Symbol
MIN.
TYP.
90
150
270
180
290
520
220
450
800
0.25
0.6
V
V
-
MAX. UNIT
Collector-Emitter saturation voltage
Small-signal characteristics
PARAMETER
Current-gain-bandwidth product
Output capacitance
Noise figure
(I
C
= 0.2mA, V
CE
= 5.0V, R
S
= 2.0ΚΩ,
f = 1.0KHz, BW = 200Hz)
CONDITIONS
I
C
= 10mA, V
CE
= 5.0V, f = 100MHz
V
CB
= 10V, f = 1.0MHz
BC846A,B
BC847A,B,C
BC848A,B,C
BC849B,C
BC850B,C
Symbol
f
T
C
obo
MIN.
100
TYP.
MAX. UNIT
MHz
4.5
10
pF
Vdc
NF
4
dB
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
Issued Date
2009/08/10
Revised Date
2011/07/21
Revision
C
Page.
9
Page 3
DS-231154
Rating and characteristic curves
BC846 Series
Fig.1- DC CURRENT GAIN
h
FE
, DC CURRENT GAIN (NORAMALIZED)
1.0
T
A
= 25 C
V
CE
= 5V
O
T
A
= 25 C
2.0
O
Fig. 2-"ON" VOLTAGE
V, VOLTAGE (V)
0.8
V
BE(sat)
@ I
C
/ I
B
= 10
0.6
V
BE
@ C
CE
= 5.0V
1.0
0.5
0.4
0.2
0.2
V
CE(sat)
@ I
C
/ I
B
= 10
0.1 0.2
1.0
10
100
0
0.2
0.5
1.0
5.0
10
20
50
100
200
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECT CURRENT (mA)
V
CE
, COLLECTOR-EMI TTER VOLTAGE (V)
2.0
O
q
VB
, TEMPERATURE COEFFICIENT (mV/ C)
FIG.3- COLLECTOR SATURATION REGION
T
A
= 25
O
C
1.6
Fig. 4-BASE-EMITTER TEMPERATURE COFFICIENT
100
20mA
50mA
100mA
200mA
50
1.2
q
VB
for V
BE
-55
O
C to 125
O
C
0.8
0.4
10
I
C
= 10mA
0
5.0
0.2
0.5
1.0
-2.0
5.0
10
50
100
200
0.02
0.05
0.1
0.2
1.0
10
20
I
B
, BASE CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
Fig. 5.-CAPACITANCE
40
fT, CURRENT-GAIN-BANDWIDTH PRODUCT(MHz)
Fig. 6- CURRENT-GAIN-BANDEIDTH PRODUCT
C, CAPACTIANCE (pF)
500
20
T
A
= 25
O
C
C
ib
10
6.0
4.0
C
ob
V
CE
= 5.0V
O
T
A
= 25 C
200
100
50
20
2.0
0.1
0.5
1.0
5.0
10
50
100
1.0
10
100
VR, REVERSE VOLTAGE (V)
I
C
,
COLLECTOR CURRENT(mA)
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
Issued Date
2009/08/10
Revised Date
2011/07/21
Revision
C
Page.
9
Page 4
DS-231154
Rating and characteristic curves
BC847/BC848/BC849/BC850 Series
Fig.7- DC CURRENT GAIN
h
FE
, DC CURRENT GAIN (NORAMALIZED)
2.0
1.0
T
A
= 25 C
V
CE
= 10V
O
T
A
= 25 C
1.0
O
Fig. 8-"ON" VOLTAGE
V, VOLTAGE (V)
0.8
V
BE(sat)
@ I
C
/ I
B
= 10
0.6
V
BE
@ C
CE
= 10V
0.6
0.4
0.4
0.2
V
CE(sat)
@ I
C
/ I
B
= 10
0.2
0.2
0.5
1.0
10
100
200
0
0.1
0.5
1.0
5.0
10
20
50
100
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECT CURRENT (mA)
V
CE
, COLLECTOR-EMI TTER VOLTAGE (V)
2.0
O
θ
VB
, TEMPERATURE COEFFICIENT (mV/ C)
FIG.9- COLLECTOR SATURATION REGION
T
A
= 25 C
1.6
O
Fig. 10-BASE-EMITTER TEMPERATURE COFFICIENT
1.0
I
C
= 200mA
1.2
I
C
= 50mA
1.6
1.2
2.0
-55
O
C to 125
O
C
2.4
0.8
I
C
= 100mA
0.4
I
C
= 20mA
I
C
= 10mA
2.8
0
0.02
0.1
1.0
10
20
0.2
1.0
10
100
I
B
, BASE CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
Fig. 11.-CAPACITANCE
10
fT, CURRENT-GAIN-BANDWIDTH PRODUCT (MHz)
Fig. 12- CURRENT-GAIN-BANDEIDTH PRODUCT
400
C, CAPACTIANCE (pF)
200
5.0
C
ib
3.0
T
A
= 25
O
C
V
CE
= 10V
O
T
A
= 25 C
100
60
2.0
C
ob
30
20
1.0
0.4
1.0
10
40
0.5
1.0
2.0
10
50
VR, REVERSE VOLTAGE (V)
I
C
,
COLLECTOR CURRENT(mA)
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
Issued Date
2009/08/10
Revised Date
2011/07/21
Revision
C
Page.
9
Page 5
DS-231154
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