BZX84B4V7LT1,
BZX84C2V4LT1 Series
Zener Voltage Regulators
225 mW SOT−23 Surface Mount
This series of Zener diodes is offered in the convenient, surface
mount plastic SOT−23 package. These devices are designed to provide
voltage regulation with minimum space requirement. They are well
suited for applications such as cellular phones, hand held portables,
and high density PC boards.
Features
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3
Cathode
1
Anode
•
•
•
•
•
•
•
225 mW Rating on FR−4 or FR−5 Board
Zener Breakdown Voltage Range
−
2.4 V to 75 V
Package Designed for Optimal Automated Board Assembly
Small Package Size for High Density Applications
ESD Rating of Class 3 (>16 KV) per Human Body Model
Tight Tolerance Series Available (See Page 4)
Pb−Free Packages are Available
MARKING
DIAGRAM
3
1
2
SOT−23
CASE 318
STYLE 8
1
xxx M
G
G
Mechanical Characteristics
CASE:
Void-free, transfer-molded, thermosetting plastic case
FINISH:
Corrosion resistant finish, easily Solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
260°C for 10 Seconds
POLARITY:
Cathode indicated by polarity band
FLAMMABILITY RATING:
UL 94 V−0
MAXIMUM RATINGS
Rating
Total Power Dissipation on FR−5 Board,
(Note 1) @ T
A
= 25°C
Derated above 25°C
Thermal Resistance, Junction−to−Ambient
Total Power Dissipation on Alumina
Substrate, (Note 2) @ T
A
= 25°C
Derated above 25°C
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature Range
Symbol
P
D
R
qJA
P
D
R
qJA
T
J
, T
stg
Max
225
1.8
556
300
2.4
417
−65
to
+150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
xxx
= Device Code
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
* Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
Device
BZX84CxxxLT1
BZX84CxxxLT1G
BZX84CxxxLT3
BZX84CxxxLT3G
BZX84BxxxLT1
BZX84BxxxLT1G
BZX84BxxxLT3
BZX84BxxxLT3G
Package
SOT−23
SOT−23
(Pb−Free)
SOT−23
SOT−23
(Pb−Free)
SOT−23
SOT−23
(Pb−Free)
SOT−23
Shipping
†
3000/Tape & Reel
3000/Tape & Reel
10,000/Tape & Reel
10,000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
10,000/Tape & Reel
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 X 0.75 X 0.62 in.
2. Alumina = 0.4 X 0.3 X 0.024 in., 99.5% alumina.
SOT−23 10,000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
DEVICE MARKING INFORMATION
See specific marking information in the device marking
column of the Electrical Characteristics table on page 3 of
this data sheet.
©
Semiconductor Components Industries, LLC, 2009
July, 2009
−
Rev. 13
1
Publication Order Number:
BZX84C2V4LT1/D
BZX84B4V7LT1, BZX84C2V4LT1 Series
ELECTRICAL CHARACTERISTICS
(Pinout: 1-Anode, 2-No Connection, 3-Cathode) (T
A
= 25°C
unless otherwise noted, V
F
= 0.90 V Max. @ I
F
= 10 mA)
Symbol
V
Z
I
ZT
Z
ZT
I
R
V
R
I
F
V
F
QV
Z
C
Parameter
Reverse Zener Voltage @ I
ZT
Reverse Current
Maximum Zener Impedance @ I
ZT
Reverse Leakage Current @ V
R
Reverse Voltage
Forward Current
Forward Voltage @ I
F
Maximum Temperature Coefficient of V
Z
Max. Capacitance @ V
R
= 0 and f = 1 MHz
V
Z
V
R
I
R
V
F
I
ZT
V
I
F
I
Zener Voltage Regulator
http://onsemi.com
2
BZX84B4V7LT1, BZX84C2V4LT1 Series
ELECTRICAL CHARACTERISTICS
−
BZX84CxxxLT1 SERIES (STANDARD TOLERANCE)
(Pinout: 1-Anode, 2-No Connection, 3-Cathode) (T
A
= 25°C unless otherwise noted, V
F
= 0.90 V Max. @ I
F
= 10 mA)
(Devices listed in
bold, italic
are ON Semiconductor Preferred devices.)
V
Z1
(Volts)
@ I
ZT1
= 5 mA
(Note 3)
Device*
BZX84C2V4LT1, G
BZX84C2V7LT1, G
BZX84C3V0LT1, G
BZX84C3V3LT1, G
BZX84C3V6LT1, G
BZX84C3V9LT1, G
BZX84C4V3LT1, G
BZX84C4V7LT1, G
BZX84C5V1LT1, G
BZX84C5V6LT1, G
BZX84C6V2LT1, G
BZX84C6V8LT1, G
BZX84C7V5LT1, G
BZX84C8V2LT1, G
BZX84C9V1LT1, G
BZX84C10LT1, G
BZX84C11LT1, G
BZX84C12LT1, G
BZX84C13LT1, G
BZX84C15LT1, G
BZX84C16LT1, G
BZX84C18LT1, G
BZX84C20LT1, G
BZX84C22LT1, G
BZX84C24LT1, G
Device
Marking
Z11
Z12
Z13
Z14
Z15
Z16
W9
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
Y1
Y2
Y3
Y4
Y5
Y6
Y7
Y8
Y9
Min
2.2
2.5
2.8
3.1
3.4
3.7
4
4.4
4.8
5.2
5.8
6.4
7
7.7
8.5
9.4
10.4
11.4
12.4
13.8
15.3
16.8
18.8
20.8
22.8
Nom
2.4
2.7
3
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
Max
2.6
2.9
3.2
3.5
3.8
4.1
4.6
5
5.4
6
6.6
7.2
7.9
8.7
9.6
10.6
11.6
12.7
14.1
15.6
17.1
19.1
21.2
23.3
25.6
V
Z2
(V)
@ I
ZT2
= 1 mA
(Note 3)
Min
1.7
1.9
2.1
2.3
2.7
2.9
3.3
3.7
4.2
4.8
5.6
6.3
6.9
7.6
8.4
9.3
10.2
11.2
12.3
13.7
15.2
16.7
18.7
20.7
22.7
Max
2.1
2.4
2.7
2.9
3.3
3.5
4
4.7
5.3
6
6.6
7.2
7.9
8.7
9.6
10.6
11.6
12.7
14
15.5
17
19
21.1
23.2
25.5
V
Z3
(V)
@ I
ZT3
= 20 mA
(Note 3)
Min
2.6
3
3.3
3.6
3.9
4.1
4.4
4.5
5
5.2
5.8
6.4
7
7.7
8.5
9.4
10.4
11.4
12.5
13.9
15.4
16.9
18.9
20.9
22.9
Max
3.2
3.6
3.9
4.2
4.5
4.7
5.1
5.4
5.9
6.3
6.8
7.4
8
8.8
9.7
10.7
11.8
12.9
14.2
15.7
17.2
19.2
21.4
23.4
25.7
Max Reverse
Leakage
Current
I
R
mA
50
20
10
5
5
3
3
3
2
1
3
2
1
0.7
0.5
0.2
0.1
0.1
0.1
0.05
0.05
0.05
0.05
0.05
0.05
V
R
@
Volts
1
1
1
1
1
1
1
2
2
2
4
4
5
5
6
7
8
8
8
10.5
11.2
12.6
14
15.4
16.8
q
VZ
(mV/k)
@ I
ZT1
= 5 mA
Min
−3.5
−3.5
−3.5
−3.5
−3.5
−3.5
−3.5
−3.5
−2.7
−2.0
0.4
1.2
2.5
3.2
3.8
4.5
5.4
6.0
7.0
9.2
10.4
12.4
14.4
16.4
18.4
Max
0
0
0
0
0
−2.5
0
0.2
1.2
2.5
3.7
4.5
5.3
6.2
7.0
8.0
9.0
10.0
11.0
13.0
14.0
16.0
18.0
20.0
22.0
Z
ZT1
(W)
@ I
ZT1
=
5 mA
100
100
95
95
90
90
90
80
60
40
10
15
15
15
15
20
20
25
30
30
40
45
55
55
70
Z
ZT2
(W)
@ I
ZT2
=
1 mA
600
600
600
600
600
600
600
500
480
400
150
80
80
80
100
150
150
150
170
200
200
225
225
250
250
Z
ZT3
(W)
@ I
ZT3
=
20 mA
50
50
50
40
40
30
30
15
15
10
6
6
6
6
8
10
10
10
15
20
20
20
20
25
25
C (pF)
@ V
R
= 0
f = 1 MHz
450
450
450
450
450
450
450
260
225
200
185
155
140
135
130
130
130
130
120
110
105
100
85
85
80
V
Z1
Below
@ I
ZT1
= 2 mA
Device
BZX84C27LT1, G
BZX84C30LT1, G
BZX84C33LT1, G
BZX84C36LT1, G
BZX84C39LT1, G
BZX84C43LT1, G
BZX84C47LT1, G
BZX84C51LT1, G
BZX84C56LT1, G
BZX84C62LT1, G
BZX84C68LT1, G
BZX84C75LT1, G
Device
Marking
Y10
Y11
Y12
Y13
Y14
Y15
Y16
Y17
Y18
Y19
Y20
Y21
Min
25.1
28
31
34
37
40
44
48
52
58
64
70
Nom
27
30
33
36
39
43
47
51
56
62
68
75
Max
28.9
32
35
38
41
46
50
54
60
66
72
79
Z
ZT1
Below
@ I
ZT1
=
2 mA
80
80
80
90
130
150
170
180
200
215
240
255
V
Z2
Below
@ I
ZT2
= 0.1 m-
A
Min
25
27.8
30.8
33.8
36.7
39.7
43.7
47.6
51.5
57.4
63.4
69.4
Max
28.9
32
35
38
41
46
50
54
60
66
72
79
Z
ZT2
Below
@ I
ZT4
=
0.5 mA
300
300
325
350
350
375
375
400
425
450
475
500
V
Z3
Below
@ I
ZT3
= 10 mA
Min
25.2
28.1
31.1
34.1
37.1
40.1
44.1
48.1
52.1
58.2
64.2
70.3
Max
29.3
32.4
35.4
38.4
41.5
46.5
50.5
54.6
60.8
67
73.2
80.2
Z
ZT3
Below
@ I
ZT3
=
10 mA
45
50
55
60
70
80
90
100
110
120
130
140
Max Reverse
Leakage
Current
I
R
mA
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
@
V
R
(V)
18.9
21
23.1
25.2
27.3
30.1
32.9
35.7
39.2
43.4
47.6
52.5
q
VZ
(mV/k) Below
@ I
ZT1
= 2 mA
Min
21.4
24.4
27.4
30.4
33.4
37.6
42.0
46.6
52.2
58.8
65.6
73.4
Max
25.3
29.4
33.4
37.4
41.2
46.6
51.8
57.2
63.8
71.6
79.8
88.6
C (pF)
@ V
R
= 0
f = 1 MHz
70
70
70
70
45
40
40
40
40
35
35
35
3. Zener voltage is measured with a pulse test current I
Z
at an ambient temperature of 25°C.
* The “G” suffix indicates Pb−Free package available.
http://onsemi.com
3
BZX84B4V7LT1, BZX84C2V4LT1 Series
ELECTRICAL CHARACTERISTICS
−
BZX84BxxxL (Tight Tolerance Series)
(Pinout: 1-Anode, 2-No Connection, 3-Cathode) (T
A
= 25°C unless otherwise noted, V
F
= 0.90 V Max. @ I
F
= 10 mA)
Z
ZT
(W) @
I
ZT
= 5 mA
(Note 4)
Max
80
60
40
10
15
15
15
15
25
30
40
45
55
70
Max Reverse
Leakage
Current
I
R
mA
3
2
1
3
2
1
0.7
0.5
0.1
0.05
0.05
0.05
0.05
0.05
@
V
R
Volts
2
2
2
4
4
5
5
6
8
10.5
11.2
12.6
15.4
16.8
Device
BZX84B4V7LT1, G
BZX84B5V1LT1, G
BZX84B5V6LT1, G
BZX84B6V2LT1, G
BZX84B6V8LT1, G
BZX84B7V5LT1, G
BZX84B8V2LT1, G
BZX84B9V1LT1, G
BZX84B12LT1, G
BZX84B15LT1, G
BZX84B16LT1, G
BZX84B18LT1, G
BZX84B22LT1, G
BZX84B24LT1, G
Device
Marking
T10
T11
T12
T13
T14
T15
T16
T17
T18
T22
T19
T20
T24
T25
V
Z
(Volts) @ I
ZT
= 5 mA
(Note 4)
Min
4.61
5.00
5.49
6.08
6.66
7.35
8.04
8.92
11.8
14.7
15.7
17.6
21.6
23.5
Nom
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
12
15
16
18
22
24
Max
4.79
5.20
5.71
6.32
6.94
7.65
8.36
9.28
12.2
15.3
16.3
18.4
22.4
24.5
q
VZ
(mV/k)
@ I
ZT
= 5 mA
Min
−3.5
−2.7
−2
0.4
1.2
2.5
3.2
3.8
6
9.2
10.4
12.4
16.4
18.4
Max
0.2
1.2
2.5
3.7
4.5
5.3
6.2
7
10
13
14
16
20
22
C (pF)
@ V
R
=0,
f = 1 MHz
260
225
200
185
155
140
135
130
130
110
105
100
85
80
4. Zener voltage is measured with a pulse test current I
Z
at an ambient temperature of 25°C.
* The “G” suffix indicates Pb−Free package available.
http://onsemi.com
4
BZX84B4V7LT1, BZX84C2V4LT1 Series
TYPICAL CHARACTERISTICS
θ
VZ, TEMPERATURE COEFFICIENT (mV/
°
C)
8
7
6
5
4
3
2
1
0
-1
-2
-3
V
Z
@ I
ZT
TYPICAL T
C
VALUES
100
θ
VZ, TEMPERATURE COEFFICIENT (mV/
°
C)
TYPICAL T
C
VALUES
V
Z
@ I
ZT
10
2
3
4
5
6
7
8
9
10
V
Z
, NOMINAL ZENER VOLTAGE (V)
11
12
1
10
V
Z
, NOMINAL ZENER VOLTAGE (V)
100
Figure 1. Temperature Coefficients
(Temperature Range
−
55°C to +150°C)
Figure 2. Temperature Coefficients
(Temperature Range
−
55°C to +150°C)
1000
Z ZT, DYNAMIC IMPEDANCE (
Ω
)
T
J
= 25°C
I
Z(AC)
= 0.1 I
Z(DC)
f = 1 kHz
1000
IF, FORWARD CURRENT (mA)
75 V (MMBZ5267BLT1)
91 V (MMBZ5270BLT1)
I
Z
= 1 mA
100
5 mA
20 mA
10
100
10
150°C
1
1
10
V
Z
, NOMINAL ZENER VOLTAGE
100
1
0.4
0.5
75°C 25°C
0.6
0°C
1.1
1.2
0.7
0.8
0.9
1.0
V
F
, FORWARD VOLTAGE (V)
Figure 3. Effect of Zener Voltage on
Zener Impedance
Figure 4. Typical Forward Voltage
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5
Embedded System
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