BAS70/ -04/ -05/ -06
SURFACE MOUNT SCHOTTKY BARRIER DIODE
SPICE MODELS: BAS70 BAS70-04 BAS70-05 BAS70-06
Features
·
·
·
·
Low Turn-on Voltage
Fast Switching
PN Junction Guard Ring for Transient and
ESD Protection
Available in Lead Free/RoHS Compliant Version
(Note 3)
B
C
SOT-23
Dim
A
Min
0.37
1.20
2.30
0.89
0.45
1.78
2.80
0.013
0.903
0.45
0.085
0°
Max
0.51
1.40
2.50
1.03
0.60
2.05
3.00
0.10
1.10
0.61
0.180
8°
A
B
C
D
E
G
K
J
L
M
Mechanical Data
·
·
·
·
·
·
·
·
·
Case: SOT-23
Case Material: UL Flammability Classification Rating 94V-0
Moisture sensitivity: Level 1 per J-STD-020C
Terminals: Solderable per MIL-STD-202, Method 208
Also Available in Lead Free Plating (Matte Tin
Finish annealed over Alloy 42 leadframe). Please see
Ordering Information, Note 5, on Page 3
Polarity: See Diagrams Below
Marking: See Diagrams Below & Page 3
Ordering Information: See Page 3
Weight: 0.008 grams (Approx.)
E
D
G
H
H
J
K
L
M
a
All Dimensions in mm
BAS70 Marking: K73, K7C
BAS70-04 Marking: K74, K7D
BAS70-05 Marking: K75, K7E
BAS70-06 Marking: K76, K7F
Maximum Ratings and Electrical Characteristics, Single Diode
@ T
A
= 25°C unless otherwise specified
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Maximum Forward Continuous Current (Note 1)
Non-Repetitive Peak Forward Surge Current
Power Dissipation (Note 1)
Thermal Resistance Junction to Ambient Air (Note 1)
Operating Junction Temperature Range
Storage Temperature Range
@ t
£
1.0s
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
FM
I
FSM
P
d
R
qJA
T
j
T
STG
@ T
A
= 25°C unless otherwise specified
Symbol
V
(BR)R
V
F
I
R
C
T
t
rr
Min
70
—
¾
¾
—
Max
—
410
1000
100
2.0
5.0
Unit
V
mV
nA
pF
ns
Test Condition
I
R
= 10mA
t
p
<300µs, I
F
= 1.0mA
t
p
<300µs, I
F
= 15mA
t
p
< 300µs, V
R
= 50V
V
R
= 0V, f = 1.0MHz
I
F
= I
R
= 10mA to I
R
= 1.0mA,
R
L
=100W
Value
70
49
70
100
200
625
-55 to +125
-65 to +150
Unit
V
V
mA
mA
mW
°C/W
°C
°C
Electrical Ratings
Characteristic
Reverse Breakdown Voltage (Note 2)
Forward Voltage
Reverse Current (Note 2)
Total Capacitance
Reverse Recovery Time
Notes:
1. Part mounted on FR-4 board with recommended pad layout, which can be found on our website
at http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration pulse test used to minimize self-heating effect.
3. No purposefully added lead.
DS11007 Rev. 15 - 2
1 of 3
www.diodes.com
BAS70/ -04/ -05/ -06
ã
Diodes Incorporated
I
F
, INSTANTANEOUS FORWARD CURRENT (mA)
100
T
A
= 125ºC
T
A
= 75ºC
T
A
= 25ºC
10
1.0
T
A
= 0ºC
0.1
0
0.2
0.4
T
A
= -40ºC
0.6
0.8
1.0
1.2
1.4
1.6
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 1 Typical Forward Characteristics
I
R
, INSTANTANEOUS REVERSE CURRENT (nA)
10000
T
A
= 125ºC
1000
T
A
= 75ºC
100
10
T
A
= 25ºC
T
A
= 0ºC
1
T
A
= -40ºC
0.1
0
10
20
30
40
50
60
70
V
R
, REVERSE VOLTAGE (V)
Fig. 2 Typical Reverse Characteristics
1.8
250
1.6
f = 1.0MHz
C
T
, TOTAL CAPACITANCE (pF)
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
5
10
15
20
25
30
35
40
P
d
, POWER DISSIPATION (mW)
200
150
100
50
0
0
100
200
V
R
, REVERSE VOLTAGE (V)
Fig. 3 Typical Total Capacitance vs. Reverse Voltage
T
A
, AMBIENT TEMPERATURE (°C)
Fig. 4 Power Derating Curve, Total Package
DS11007 Rev. 15 - 2
2 of 3
www.diodes.com
BAS70/ -04/ -05/ -06
ARM Technology
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