PRELIMINARY DATA SHEET
MOS INTEGRATED CIRCUIT
µ
PD44321181, 44321321, 44321361
32M-BIT ZEROSB
TM
SRAM
FLOW THROUGH OPERATION
Description
The
µ
PD44321181 is a 2,097,152-word by 18-bit, the
µ
PD44321321 is a 1,048,576-word by 32-bit and the
µ
PD44321361 is a 1,048,576-word by 36-bit ZEROSB static RAM fabricated with advanced CMOS technology using
full CMOS six-transistor memory cell.
The
µ
PD44321181,
µ
PD44321321 and
µ
PD44321361 are optimized to eliminate dead cycles for read to write, or
write to read transitions. These ZEROSB static RAMs integrate unique synchronous peripheral circuitry, 2-bit burst
counter and output buffer as well as SRAM core. All input registers are controlled by a positive edge of the single
clock input (CLK).
The
µ
PD44321181,
µ
PD44321321 and
µ
PD44321361 are suitable for applications which require synchronous
operation, high speed, low voltage, high density and wide bit configuration, such as buffer memory.
ZZ has to be set LOW at the normal operation. When ZZ is set HIGH, the SRAM enters Power Down State
(“Sleep”). In the “Sleep” state, the SRAM internal state is preserved. When ZZ is set LOW again, the SRAM resumes
normal operation.
The
µ
PD44321181,
µ
PD44321321 and
µ
PD44321361 are packaged in 100-pin PLASTIC LQFP with a 1.4 mm
package thickness or 165-pin PLASTIC FBGA for high density and low capacitive loading.
Features
•
Low voltage core supply: V
DD
= 3.3 ± 0.165V (-A65, -A75, -A85, -A65Y, -A75Y, -A85Y)
V
DD
= 2.5 ± 0.125V (-C75, -C85, -C75Y, -C85Y)
•
Synchronous operation
•
Operating temperature : T
A
= 0 to 70 °C (-A65, -A75, -A85, -C75, -C85)
T
A
= –40 to +85 °C (-A65Y, -A75Y, -A85Y, -C75Y, -C85Y)
•
100 percent bus utilization
•
Internally self-timed write control
•
Burst read / write : Interleaved burst and linear burst sequence
•
Fully registered inputs and outputs for flow through operation
•
All registers triggered off positive clock edge
•
3.3V or 2.5V LVTTL Compatible : All inputs and outputs
•
Fast clock access time : 6.5 ns (133 MHz), 7.5 ns (117 MHz), 8.5 ns (100 MHz)
•
Asynchronous output enable : /G
•
Burst sequence selectable : MODE
•
Sleep mode : ZZ (ZZ = Open or Low : Normal operation)
•
Separate byte write enable : /BW1 to /BW4 (
µ
PD44321321 and
µ
PD44321361)
/BW1 and /BW2 (
µ
PD44321181)
•
Three chip enables for easy depth expansion
•
Common I/O using three state outputs
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with NEC Electronics sales
representative for availability and additional information.
Document No. M15958EJ1V0DS00 (1st edition)
Date Published December 2002 NS CP(K)
Printed in Japan
The mark
shows major revised points.
2002
µ
PD44321181, 44321321, 44321361
Ordering Information
Part number
Access
Time
ns
6.5
7.5
8.5
6.5
7.5
8.5
6.5
7.5
8.5
7.5
8.5
7.5
8.5
7.5
8.5
6.5
7.5
8.5
6.5
7.5
8.5
6.5
7.5
8.5
7.5
8.5
7.5
8.5
7.5
8.5
Clock
Frequency
MHz
133
117
100
133
117
100
133
117
100
117
100
117
100
117
100
133
117
100
133
117
100
133
117
100
117
100
117
100
117
100
2.5 ± 0.125
2.5 V LVTTL
3.3 ± 0.165
3.3 V or
2.5 V LVTTL
165-pin PLASTIC FBGA
(15 x 17)
2.5 ± 0.125
2.5 V LVTTL
Core Supply
Voltage
V
3.3 ± 0.165
I/O Interface
Operating
Temperature
°C
0 to 70
Package
(1/2)
µ
PD44321181GF-A65
µ
PD44321181GF-A75
µ
PD44321181GF-A85
µ
PD44321321GF-A65
µ
PD44321321GF-A75
µ
PD44321321GF-A85
µ
PD44321361GF-A65
µ
PD44321361GF-A75
µ
PD44321361GF-A85
µ
PD44321181GF-C75
µ
PD44321181GF-C85
µ
PD44321321GF-C75
µ
PD44321321GF-C85
µ
PD44321361GF-C75
µ
PD44321361GF-C85
µ
PD44321181F1-A65-FQ2
Note
µ
PD44321181F1-A75-FQ2
Note
µ
PD44321181F1-A85-FQ2
Note
µ
PD44321321F1-A65-FQ2
Note
µ
PD44321321F1-A75-FQ2
Note
µ
PD44321321F1-A85-FQ2
Note
µ
PD44321361F1-A65-FQ2
Note
µ
PD44321361F1-A75-FQ2
Note
µ
PD44321361F1-A85-FQ2
Note
µ
PD44321181F1-C75-FQ2
Note
µ
PD44321181F1-C85-FQ2
Note
µ
PD44321321F1-C75-FQ2
Note
µ
PD44321321F1-C85-FQ2
Note
µ
PD44321361F1-C75-FQ2
Note
µ
PD44321361F1-C85-FQ2
Note
3.3 V or
2.5 V LVTTL
100-pin PLASTIC LQFP
(14 x 20)
Note
Under development
2
Preliminary Data Sheet M15958EJ1V0DS
µ
PD44321181, 44321321, 44321361
(2/2)
Part number
Access
Time
ns
6.5
7.5
8.5
6.5
7.5
8.5
6.5
7.5
8.5
7.5
8.5
7.5
8.5
7.5
8.5
6.5
7.5
8.5
6.5
7.5
8.5
6.5
7.5
8.5
7.5
8.5
7.5
8.5
7.5
8.5
Clock
Frequency
MHz
133
117
100
133
117
100
133
117
100
117
100
117
100
117
100
133
117
100
133
117
100
133
117
100
117
100
117
100
117
100
2.5 ± 0.125
2.5 V LVTTL
3.3 ± 0.165
3.3 V or
2.5 V LVTTL
165-pin PLASTIC FBGA
(15 x 17)
2.5 ± 0.125
2.5 V LVTTL
Core Supply
Voltage
V
3.3 ± 0.165
I/O Interface
Operating
Temperature
°C
–40 to +85
Package
µ
PD44321181GF-A65Y
µ
PD44321181GF-A75Y
µ
PD44321181GF-A85Y
µ
PD44321321GF-A65Y
µ
PD44321321GF-A75Y
µ
PD44321321GF-A85Y
µ
PD44321361GF-A65Y
µ
PD44321361GF-A75Y
µ
PD44321361GF-A85Y
µ
PD44321181GF-C75Y
µ
PD44321181GF-C85Y
µ
PD44321321GF-C75Y
µ
PD44321321GF-C85Y
µ
PD44321361GF-C75Y
µ
PD44321361GF-C85Y
µ
PD44321181F1-A65Y-FQ2
Note
µ
PD44321181F1-A75Y-FQ2
Note
µ
PD44321181F1-A85Y-FQ2
Note
µ
PD44321321F1-A65Y-FQ2
Note
µ
PD44321321F1-A75Y-FQ2
Note
µ
PD44321321F1-A85Y-FQ2
Note
µ
PD44321361F1-A65Y-FQ2
Note
µ
PD44321361F1-A75Y-FQ2
Note
µ
PD44321361F1-A85Y-FQ2
Note
µ
PD44321181F1-C75Y-FQ2
Note
µ
PD44321181F1-C85Y-FQ2
Note
µ
PD44321321F1-C75Y-FQ2
Note
µ
PD44321321F1-C85Y-FQ2
Note
µ
PD44321361F1-C75Y-FQ2
Note
µ
PD44321361F1-C85Y-FQ2
Note
3.3 V or
2.5 V LVTTL
100-pin PLASTIC LQFP
(14 x 20)
Note
Under development
Preliminary Data Sheet M15958EJ1V0DS
3
µ
PD44321181, 44321321, 44321361
Pin Configurations
/××× indicates active low signal.
100-pin PLASTIC LQFP (14
×
20)
[
µ
PD44321181GF]
Marking Side
/BW2
/BW1
/CKE
/CE2
ADV
CLK
CE2
/WE
A18
A17
V
DD
V
SS
/CE
NC
NC
A6
A7
A8
A9
/G
100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81
NC
NC
NC
V
DD
Q
V
SS
Q
NC
NC
I/O9
I/O10
V
SS
Q
V
DD
Q
I/O11
I/O12
V
SS
V
DD
V
DD
V
SS
I/O13
I/O14
V
DD
Q
V
SS
Q
I/O15
I/O16
I/OP2
NC
V
SS
Q
V
DD
Q
NC
NC
NC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50
80
79
78
77
76
75
74
73
72
71
70
69
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
A20
NC
NC
V
DD
Q
V
SS
Q
NC
I/OP1
I/O8
I/O7
V
SS
Q
V
DD
Q
I/O6
I/O5
V
SS
V
SS
V
DD
ZZ
I/O4
I/O3
V
DD
Q
V
SS
Q
I/O2
I/O1
NC
NC
V
SS
Q
V
DD
Q
NC
NC
NC
MODE
V
SS
A5
A4
A3
A2
A1
A0
V
DD
NC
NC
A19
A10
A11
A12
A13
A14
A15
Remark
Refer to
Package Drawing
for the 1-pin index mark.
4
Preliminary Data Sheet M15958EJ1V0DS
A16
NC
µ
PD44321181, 44321321, 44321361
Pin Identifications
[
µ
PD44321181GF]
Symbol
A0 to A20
Pin No.
37, 36, 35, 34, 33, 32, 100, 99, 82, 81,
44, 45, 46, 47, 48, 49, 50, 83, 84, 43, 80
I/O1 to I/O16
58, 59, 62, 63, 68, 69, 72, 73, 8, 9, 12, 13, Synchronous Data In,
18, 19, 22, 23
I/OP1
I/OP2
ADV
/CE, CE2, /CE2
/WE
/BW1, /BW2
/G
CLK
/CKE
MODE
74
24
85
98, 97, 92
88
93, 94
86
89
87
31
Synchronous / Asynchronous Data Out
Synchronous Data In (Parity),
Synchronous / Asynchronous Data Out (Parity)
Synchronous Address Load / Advance Input
Synchronous Chip Enable Input
Synchronous Write Enable Input
Synchronous Byte Write Enable Input
Asynchronous Output Enable Input
Clock Input
Synchronous Clock Enable Input
Asynchronous Burst Sequence Select Input
Have to tied to V
DD
or V
SS
during normal operation
ZZ
V
DD
V
SS
V
DD
Q
V
SS
Q
NC
64
15, 16, 41, 65, 91
14, 17, 40, 66, 67, 90
4, 11, 20, 27, 54, 61, 70, 77
5, 10, 21, 26, 55, 60, 71, 76
1, 2, 3, 6, 7, 25, 28, 29, 30, 38, 39, 42,
51, 52, 53, 56, 57, 75, 78, 79, 95, 96
Asynchronous Power Down State Input
Power Supply
Ground
Output Buffer Power Supply
Output Buffer Ground
No Connection
Description
Synchronous Address Input
Preliminary Data Sheet M15958EJ1V0DS
5
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