K9F1208Q0A K9F1216Q0A
K9F1208D0A K9F1216D0A
K9F1208U0A K9F1216U0A
FLASH MEMORY
Document Title
64M x 8 Bit , 32M x 16 Bit NAND Flash Memory
Revision History
Revision No. History
0.0
0.1
Initial issue.
TBGA(K9F12XXX0A-DCB0/DIB0) size information is changed.
(before) 9 x 11 /0.8mm pitch , Width 1.0 mm
(after ) To Be Decided.
TBGA(K9F12XXX0A-DCB0/DIB0) size information is changed.
(before) 9 x 11 /0.8mm pitch , Width 1.0 mm, to
(after) 8.5 x 15 /0.8mm pitch, Width 1.0mm
Draft Date
Apr. 25th 2002
May. 9th 2002
Remark
Preliminary
0.2
July, 10th 2002
0.3
0.4
Pin numbering includes TBGA Dummy ball . (Page5)
Pin numbering excludes TBGA Dummy ball . (Page5)
Pin assignment of TBGA dummy ball is changed.
(before) DNU --> (after) N.C
1. Add the Rp vs tr ,tf & Rp vs ibusy graph for 1.8V device (Page 43)
2. Add the data protection Vcc guidence for 1.8V device - below about
1.1V. (Page 44)
The min. Vcc value 1.8V devices is changed.
K9F12XXQ0A : Vcc 1.65V~1.95V --> 1.70V~1.95V
Pb-free Package is added.
K9F1208U0A-FCB0,FIB0
K9F1208Q0A-HCB0,HIB0
K9F1216U0A-HCB0,HIB0
K9F1216U0A-PCB0,PIB0
K9F1216Q0A-HCB0,HIB0
K9F1208U0A-HCB0,HIB0
K9F1208U0A-PCB0,PIB0
Errata is added.(Front Page)-K9F12XXQ0A
tWC tWH tWP tRC tREH tRP tREA tCEA
Specification
45 15 25 50 15 25 30
45
Relaxed value 60 20 40 60 20 40 40
55
New definition of the number of invalid blocks is added.
(Minimum
1004 valid blocks are guaranteed for each contiguous 128Mb
memory space.)
1. 2.65V device is added.
2. Note is added.
(VIL can undershoot to -0.4V and VIH can overshoot to VCC +0.4V for
durations of 20 ns or less.)
Aug, 10th 2002
Oct, 21th 2002
0.5
Nov, 21th 2002
0.6
Mar. 5th 2003
0.7
Mar. 13rd 2003
0.8
Mar. 17th 2003
0.9
Apr. 4th 2003
1.0
Jul. 4th 2003
Note : For more detailed features and specifications including FAQ, please refer to Samsung’ Flash web site.
s
http://www.samsung.com/Products/Semiconductor/Flash/TechnicalInfo/datasheets.htm
The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right
to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have
any questions, please contact the SAMSUNG branch office near you.
1
K9F1208Q0A K9F1216Q0A
K9F1208D0A K9F1216D0A
K9F1208U0A K9F1216U0A
FLASH MEMORY
Document Title
64M x 8 Bit , 32M x 16 Bit NAND Flash Memory
Revision History
Revision No. History
1.1
Errata is deleted.
AC parameters are changed.
tWC tWH tWP tRC tREH tRP tREA tCEA
Before 45 15 25 50 15 25 30
45
After
60 20 40 60 20 40 40
55
Draft Date
Aug. 1st 2003
Remark
Note : For more detailed features and specifications including FAQ, please refer to Samsung’ Flash web site.
s
http://www.samsung.com/Products/Semiconductor/Flash/TechnicalInfo/datasheets.htm
The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right
to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have
any questions, please contact the SAMSUNG branch office near you.
2
K9F1208Q0A K9F1216Q0A
K9F1208D0A K9F1216D0A
K9F1208U0A K9F1216U0A
FLASH MEMORY
64M x 8 Bit / 32M x 16 Bit NAND Flash Memory
PRODUCT LIST
Part Number
K9F1208Q0A-D,H
K9F1216Q0A-D,H
K9F1208D0A-Y,P
K9F1208D0A-D,H
K9F1216D0A-Y,P
K9F1216D0A-D,H
K9F1208U0A-Y,P
K9F1208U0A-D,H
K9F1208U0A-V,F
K9F1216U0A-Y,P
K9F1216U0A-D,P
2.7 ~ 3.6V
X16
X8
2.4 ~ 2.9V
X16
Vcc Range
1.70 ~ 1.95V
Organization
X8
X16
X8
TSOP1
TBGA
TSOP1
TBGA
TSOP1
TBGA
WSOP1
TSOP1
TBGA
PKG Type
TBGA
FEATURES
•
Voltage Supply
- 1.8V device(K9F12XXQ0A) : 1.70~1.95V
- 2.65V device(K9F12XXD0A) : 2.4~2.9V
- 3.3V device(K9F12XXU0A) : 2.7 ~ 3.6 V
•
Organization
- Memory Cell Array
- X8 device(K9F1208X0A) : (64M + 2048K)bit x 8 bit
- X16 device(K9F1216X0A) : (32M + 1024K)bit x 16bit
- Data Register
- X8 device(K9F1208X0A) : (512 + 16)bit x 8bit
- X16 device(K9F1216X0A) : (256 + 8)bit x16bit
•
Automatic Program and Erase
- Page Program
- X8 device(K9F1208X0A) : (512 + 16)Byte
- X16 device(K9F1216X0A) : (256 + 8)Word
- Block Erase :
- X8 device(K9F1208X0A) : (16K + 512)Byte
- X16 device(K9F1216X0A) : ( 8K + 256)Word
•
Page Read Operation
- Page Size
- X8 device(K9F1208X0A) : (512 + 16)Byte
- X16 device(K9F1216X0A) : (256 + 8)Word
- Random Access
: 12µs(Max.)
- Serial Page Access : 50ns(Min.)*
* K9F12XXQ0A : 60ns(Min.)
•
Fast Write Cycle Time
- Program time : 200µs(Typ.)
- Block Erase Time : 2ms(Typ.)
•
Command/Address/Data Multiplexed I/O Port
•
Hardware Data Protection
- Program/Erase Lockout During Power Transitions
•
Reliable CMOS Floating-Gate Technology
- Endurance
: 100K Program/Erase Cycles
- Data Retention : 10 Years
•
Command Register Operation
•
Intelligent Copy-Back
•
Unique ID for Copyright Protection
•
Package
- K9F12XXX0A-YCB0/YIB0
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
- K9F12XXX0A-DCB0/DIB0
63- Ball TBGA (8.5 x 15 , 1.0 mm width)
- K9F1208U0A-VCB0/VIB0
48 - Pin WSOP I (12X17X0.7mm)
- K9F12XXX0A-PCB0/PIB0
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)- Pb-free Package
- K9F12XXX0A-HCB0/HIB0-(8.5 x 15 , 1.0 mm width)
63- Ball TBGA - Pb-free Package
- K9F1208U0A-FCB0/FIB0
48 - Pin WSOP I (12X17X0.7mm)- Pb-free Package
* K9F1208U0A-V,F(WSOPI ) is the same device as
K9F1208U0A-Y,P(TSOP1) except package type.
GENERAL DESCRIPTION
Offered in 64Mx8bit or 32Mx16bit, the K9F12XXX0A is 512M bit with spare 16M bit capacity. The device is offered in 1.8V, 2.65V,
3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can
be performed in typical 200µs on the 528-byte(X8 device) or 264-word(X16 device) page and an erase operation can be performed in
typical 2ms on a 16K-byte(X8 device) or 8K-word(X16 device) block. Data in the page can be read out at 50ns(1.8V device : 60ns)
cycle time per byte(X8 device) or word(X16 device).. The I/O pins serve as the ports for address and data input/output as well as
command input. The on-chip write control automates all program and erase functions including pulse repetition, where required, and
internal verification and margining of data. Even the write-intensive systems can take advantage of the K9F12XXX0A′s extended reli-
ability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The
K9F12XXX0A is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable
applications requiring non-volatility.
3
K9F1208Q0A K9F1216Q0A
K9F1208D0A K9F1216D0A
K9F1208U0A K9F1216U0A
PIN CONFIGURATION (TSOP1)
K9F12XXU0A-YCB0,PCB0/YIB0,PIB0
X16
N.C
N.C
N.C
N.C
N.C
N.C
R/B
RE
CE
N.C
N.C
Vcc
Vss
N.C
N.C
CLE
ALE
WE
WP
N.C
N.C
N.C
N.C
N.C
FLASH MEMORY
X8
N.C
N.C
N.C
N.C
N.C
N.C
R/B
RE
CE
N.C
N.C
Vcc
Vss
N.C
N.C
CLE
ALE
WE
WP
N.C
N.C
N.C
N.C
N.C
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
X8
N.C
N.C
N.C
N.C
I/O7
I/O6
I/O5
I/O4
N.C
N.C
N.C
Vcc
Vss
N.C
N.C
N.C
I/O3
I/O2
I/O1
I/O0
N.C
N.C
N.C
N.C
X16
Vss
I/O15
I/O7
I/O14
I/O6
I/O13
I/O5
I/O12
I/O4
N.C
N.C
Vcc
N.C
N.C
N.C
I/O11
I/O3
I/O10
I/O2
I/O9
I/O1
I/O8
I/O0
Vss
PACKAGE DIMENSIONS
48-PIN LEAD/LEAD FREE PLASTIC THIN SMALL OUT-LINE PACKAGE TYPE(I)
48 - TSOP1 - 1220F
Unit :mm/Inch
0.10
MAX
0.004
#48
( 0.25 )
0.010
12.40
0.488 MAX
0.50
0.0197
#24
#25
1.00
±0.05
0.039
±0.002
0.25
0.010 TYP
18.40
±0.10
0.724
±0.004
+0.075
20.00
±0.20
0.787
±0.008
0.008
-0.001
+0.07
+0.003
0.20
-0.03
#1
12.00
0.472
0.05
0.002 MIN
0.125
0.035
0~8
°
0.45~0.75
0.018~0.030
( 0.50 )
0.020
4
0.005
-0.001
+0.003
1.20
0.047MAX
K9F1208Q0A K9F1216Q0A
K9F1208D0A K9F1216D0A
K9F1208U0A K9F1216U0A
PIN CONFIGURATION (TBGA)
K9F12XXX0A-DCB0,HCB0/DIB0,HIB0
X8
1
N.C N.C
FLASH MEMORY
X16
5
6
N.C N.C
N.C N.C
N.C N.C
N.C
/WP
NC
ALE
/RE
NC
NC
NC
Vss
CLE
NC
NC
NC
/CE
NC
NC
NC
I/O5
/WE
NC
NC
NC
I/O7
R/B
NC
NC
NC
NC
Vcc
2
3
4
1
2
3
4
5
6
N.C N.C
N.C N.C
A
B
N.C
/WP
NC
ALE
/RE
NC
NC
NC
I/O0
I/O1
I/O2
Vss
CLE
NC
NC
NC
NC
NC
/CE
NC
NC
NC
NC
NC
VccQ
/WE
NC
NC
NC
NC
NC
I/O5
I/O6
R/B
A
B
NC
C
NC
NC
NC
NC
Vcc
I/O7
Vss
C
NC
D
NC
D
NC
E
NC
E
NC
F
NC
F
I/O8 I/O1 I/O10 I/O12 IO14
G
H
NC
Vss
I/O3 I/O4
G
I/O0
I/O9 I/O3 VccQ I/O6 I/O15
I/O2 I/O11 I/O4 I/O13 Vss
H
Vss
N.C N.C
N.C N.C
N.C N.C
N.C N.C
N.C N.C
N.C N.C
N.C N.C
N.C N.C
Top View
Top View
5
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