PMEG3005CT
500 mA low V
F
dual MEGA Schottky barrier rectifier
Rev. 2 — 20 September 2010
Product data sheet
1. Product profile
1.1 General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier in
common cathode configuration with an integrated guard ring for stress protection,
encapsulated in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic
package.
1.2 Features and benefits
Average forward current: I
F(AV)
≤
0.5 A
Reverse voltage: V
R
≤
30 V
Low forward voltage
AEC-Q101 qualified
Small SMD plastic package
1.3 Applications
Low voltage rectification
High efficiency DC-to-DC conversion
Switch Mode Power Supply (SMPS)
Reverse polarity protection
High-speed switching
Low power consumption applications
1.4 Quick reference data
Table 1.
Quick reference data
T
j
= 25
°
C unless otherwise specified.
Symbol
Per diode
I
F(AV)
average forward current
square wave;
δ
= 0.5;
f = 20 kHz
T
amb
≤
95
°C
T
sp
≤
130
°C
V
R
V
F
I
R
[1]
[1]
Parameter
Conditions
Min
Typ
Max
Unit
-
-
-
-
-
-
-
-
375
40
0.5
0.5
30
430
150
A
A
V
mV
μA
reverse voltage
forward voltage
reverse current
I
F
= 0.5 A
V
R
= 30 V
Device mounted on a ceramic Printed-Circuit Board (PCB), Al
2
O
3
, standard footprint.
NXP Semiconductors
PMEG3005CT
500 mA low V
F
dual MEGA Schottky barrier rectifier
2. Pinning information
Table 2.
Pin
1
2
3
Pinning
Description
anode (diode 1)
anode (diode 2)
common cathode
1
2
3
3
Simplified outline
Graphic symbol
1
2
006aaa438
3. Ordering information
Table 3.
Ordering information
Package
Name
PMEG3005CT
-
Description
plastic surface-mounted package; 3 leads
Version
SOT23
Type number
4. Marking
Table 4.
Marking codes
Marking code
[1]
P9*
Type number
PMEG3005CT
[1]
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Per diode
V
R
I
F(AV)
reverse voltage
average forward current
T
j
= 25
°C
square wave;
δ
= 0.5;
f = 20 kHz
T
amb
≤
95
°C
T
sp
≤
130
°C
I
FRM
I
FSM
repetitive peak forward
current
non-repetitive peak
forward current
t
p
≤
1 ms;
δ ≤
0.25
square wave;
t
p
= 8 ms
[2]
[1]
Parameter
Conditions
Min
-
Max
30
Unit
V
-
-
-
-
0.5
0.5
3.9
10
A
A
A
A
PMEG3005CT
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 2 — 20 September 2010
2 of 14
NXP Semiconductors
PMEG3005CT
500 mA low V
F
dual MEGA Schottky barrier rectifier
Table 5.
Limiting values
…continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
P
tot
Parameter
total power dissipation
Conditions
T
amb
≤
25
°C
[3]
[4]
[1]
Min
-
-
-
-
−55
−65
Max
330
400
460
150
+150
+150
Unit
mW
mW
mW
°C
°C
°C
Per device; one diode loaded
T
j
T
amb
T
stg
[1]
[2]
[3]
[4]
junction temperature
ambient temperature
storage temperature
Device mounted on a ceramic PCB, Al
2
O
3
, standard footprint.
T
j
= 25
°C
prior to surge.
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
2
.
6. Thermal characteristics
Table 6.
Symbol
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
Conditions
in free air
[1]
[2]
[3]
[4]
Min
Typ
Max
Unit
Per diode; one diode loaded
-
-
-
-
-
-
-
-
375
310
270
60
K/W
K/W
K/W
K/W
R
th(j-sp)
[1]
[2]
[3]
[4]
[5]
thermal resistance from
junction to solder point
[5]
For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse
power losses P
R
are a significant part of the total power losses.
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
2
.
Device mounted on a ceramic PCB, Al
2
O
3
, standard footprint.
Soldering point of cathode tab.
PMEG3005CT
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 2 — 20 September 2010
3 of 14
NXP Semiconductors
PMEG3005CT
500 mA low V
F
dual MEGA Schottky barrier rectifier
10
3
duty cycle =
Z
th(j-a)
(K/W)
10
2
1
0.5
0.33
0.25
0.1
0.05
0.02
10
0
0.01
0.2
0.75
006aab533
1
10
−3
10
−2
10
−1
1
10
10
2
t
p
(s)
10
3
FR4 PCB, standard footprint
Fig 1.
10
3
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
006aab534
duty cycle =
Z
th(j-a)
(K/W)
10
2
1
0.75
0.5
0.25
0.1
0.02
10
0
0.33
0.2
0.05
0.01
1
10
−3
10
−2
10
−1
1
10
10
2
t
p
(s)
10
3
FR4 PCB, mounting pad for cathode 1 cm
2
Fig 2.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMEG3005CT
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 2 — 20 September 2010
4 of 14
NXP Semiconductors
PMEG3005CT
500 mA low V
F
dual MEGA Schottky barrier rectifier
10
3
Z
th(j-a)
(K/W)
10
2
duty cycle =
1
0.75
0.5
0.25
0.1
0.02
10
0
0.33
0.2
0.05
0.01
006aab535
1
10
−3
10
−2
10
−1
1
10
10
2
t
p
(s)
10
3
Ceramic PCB, Al
2
O
3
, standard footprint
Fig 3.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
7. Characteristics
Table 7.
Characteristics
T
j
= 25
°
C unless otherwise specified.
Symbol
Per diode
V
F
forward voltage
I
F
= 0.1 mA
I
F
= 1 mA
I
F
= 10 mA
I
F
= 100 mA
I
F
= 500 mA
I
R
C
d
t
rr
[1]
Parameter
Conditions
Min
-
-
-
-
-
-
-
-
[1]
Typ
95
155
215
290
375
10
40
55
17
Max
130
200
250
340
430
30
150
70
-
Unit
mV
mV
mV
mV
mV
μA
μA
pF
ns
reverse current
diode capacitance
reverse recovery time
V
R
= 10 V
V
R
= 30 V
V
R
= 1 V; f = 1 MHz
-
When switched from I
F
= 10 mA to I
R
= 10 mA; R
L
= 100
Ω;
measured at I
R
= 1 mA.
PMEG3005CT
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 2 — 20 September 2010
5 of 14
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