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KM44V4104ASLJ-8

Description
EDO DRAM, 4MX4, 80ns, CMOS, PDSO24, 0.400 INCH, PLASTIC, SOJ-28/24
Categorystorage    storage   
File Size311KB,8 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
Download Datasheet Parametric View All

KM44V4104ASLJ-8 Overview

EDO DRAM, 4MX4, 80ns, CMOS, PDSO24, 0.400 INCH, PLASTIC, SOJ-28/24

KM44V4104ASLJ-8 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerSAMSUNG
Parts packaging codeSOJ
package instructionSOJ, SOJ24/28,.44
Contacts24
Reach Compliance Codeunknown
ECCN codeEAR99
access modeFAST PAGE WITH EDO
Maximum access time80 ns
Other featuresRAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH
I/O typeCOMMON
JESD-30 codeR-PDSO-J24
JESD-609 codee0
length18.41 mm
memory density16777216 bit
Memory IC TypeEDO DRAM
memory width4
Number of functions1
Number of ports1
Number of terminals24
word count4194304 words
character code4000000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize4MX4
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeSOJ
Encapsulate equivalent codeSOJ24/28,.44
Package shapeRECTANGULAR
Package formSMALL OUTLINE
power supply3.3 V
Certification statusNot Qualified
refresh cycle2048
Maximum seat height3.76 mm
self refreshNO
Maximum standby current0.0002 A
Maximum slew rate0.08 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formJ BEND
Terminal pitch1.27 mm
Terminal locationDUAL
width10.16 mm
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