Advance Technical Information
PolarHV
TM
HiPerFET
Power MOSFET
N-Channel Enhancement Mode
IXFA 16N50P
IXFP 16N50P
IXFH 16N50P
V
DSS
I
D25
R
DS(on)
t
rr
= 500 V
= 16 A
Ω
= 400 mΩ
=
200
ns
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
T
L
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GS
= 1 MΩ
Continuous
Transient
T
C
= 25°C
T
C
= 25°C, pulse width limited by T
JM
T
C
= 25°C
T
C
= 25°C
T
C
= 25°C
I
S
≤
I
DM
, di/dt
≤
100 A/µs, V
DD
≤
V
DSS
,
T
J
≤
150°C, R
G
= 10
Ω
T
C
= 25°C
Maximum Ratings
500
500
±30
±40
16
35
16
25
750
10
300
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
mJ
mJ
V/ns
W
°C
°C
°C
°C
°C
TO-220 (IXTP)
G
D S
(TAB)
TO-263 (IXTA)
G
S
(TAB)
TO-247 (IXFH)
1.6 mm (0.062 in.) from case for 10 s
Maximum tab temperature for soldering
TO-263 package for 10s
Mounting torque
TO-220
TO-263
TO-247
(TO-247 & TO-220)
300
260
G
D
S
D (TAB)
M
d
Weight
1.13/10 Nm/lb.in.
4
3
5.5
g
g
g
Symbol
Test Conditions
(T
J
= 25°C, unless otherwise specified)
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 250
µA
V
DS
= V
GS
, I
D
= 1 mA
V
GS
=
±30
V
DC
, V
DS
= 0
V
DS
= V
DSS
V
GS
= 0 V
T
J
= 125°C
Characteristic Values
Min. Typ.
Max.
500
3.0
5.5
±100
5
50
V
V
nA
µA
µA
G = Gate
S = Source
D = Drain
TAB = Drain
Features
International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Advantages
Easy to mount
Space savings
High power density
DS99357A(03/05)
V
GS
= 10 V, I
D
= 0.5 I
D25
Pulse test, t
≤
300
µs,
duty cycle d
≤
2 %
400 mΩ
© 2005 IXYS All rights reserved
IXFH 16N50P IXFA 16N50P
IXFP 16N50P
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
Min.
Typ.
Max.
8
16
2250
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
240
12
23
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= I
D25
R
G
= 18
Ω
(External)
25
70
22
43
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
15
12
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
0.42 K/W
(TO-220)
(TO-247)
0.25
0.21
K/W
K/W
Dim.
A
A1
b
b2
c
c2
D
D1
E
E1
e
L
L1
L2
L3
L4
R
Millimeter
Min.
Max.
4.06
2.03
0.51
1.14
0.46
1.14
8.64
7.11
9.65
6.86
2.54
14.61
2.29
1.02
1.27
0
0.46
4.83
2.79
0.99
1.40
0.74
1.40
9.65
8.13
10.29
8.13
BSC
15.88
2.79
1.40
1.78
0.38
0.74
Inches
Min. Max.
.160
.080
.020
.045
.018
.045
.340
.280
.380
.270
.100
.575
.090
.040
.050
0
.018
.190
.110
.039
.055
.029
.055
.380
.320
.405
.320
BSC
.625
.110
.055
.070
.015
.029
TO-263 (IXTA) Outline
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g(on)
Q
gs
Q
gd
R
thJC
R
thCK
R
thCK
V
DS
= 20 V; I
D
= 0.5 I
D25
, pulse test
Source-Drain Diode
Symbol
I
S
I
SM
V
SD
t
rr
I
RM
Q
RM
Test Conditions
V
GS
= 0 V
Repetitive
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
Min.
typ.
Max.
16
35
1.5
A
A
V
TO-220 (IXTP) Outline
I
F
= I
S
, V
GS
= 0 V,
Pulse test, t
≤
300
µs,
duty cycle d
≤
2 %
I
F
= 16 A, -di/dt = 100 A/µs
V
R
= 100 V
130
6
0.6
200
ns
A
µC
TO-247 AD Outline
Dim.
1
2
3
Terminals: 1 - Gate
3 - Source
2 - Drain
Tab - Drain
Millimeter
Min.
Max.
A
4.7
5.3
A
1
2.2
2.54
A
2
2.2
2.6
b
1.0
1.4
b
1
1.65
2.13
b
2
2.87
3.12
C
.4
.8
D
20.80 21.46
E
15.75 16.26
e
5.20
5.72
L
19.81 20.32
L1
4.50
∅P
3.55
3.65
Q
5.89
6.40
R
4.32
5.49
S
6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
Pins:
1 - Gate
2 - Drain
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by
one or moreof the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
IXFH 16N50P
Fig. 1. Output Characteristics
@ 25
º
C
24
V
GS
= 10V
20
8V
14
12
16
IXFA 16N50P
IXFP 16N50P
Fig. 2. Output Characteristics
@ 125
º
C
V
GS
= 10V
8V
7V
I
D
- Amperes
7V
I
D
- Amperes
16
10
8
6
4
6V
12
6V
8
4
5V
0
0
2
4
6
8
10
12
14
16
18
2
0
0
2
4
6
8
10
12
5V
14
16
18
20
V
D S
- Volts
Fig. 3. R
DS(on
)
Norm alized to 0.5 I
D25
Value vs. Junction Tem perature
3.4
3.1
V
GS
= 10V
2.8
2.6
V
D S
- Volts
Fig. 4. R
DS(on)
Norm alized to
0.5 I
D25
Value vs. I
D
V
GS
= 10V
R
D S ( o n )
- Normalized
2.8
2.5
2.2
1.9
1.6
1.3
1
0.7
0.4
-50
-25
0
25
50
75
100
125
150
I
D
= 8A
I
D
= 16A
R
D S ( o n )
- Normalized
2.4
2.2
2
1.8
1.6
1.4
1.2
1
0.8
0
4
8
12
T
J
= 125
∫
C
T
J
= 25
∫
C
16
20
24
T
J
- Degrees Centigrade
Fig. 5. Drain Current vs. Case
Tem perature
18
16
14
18
16
14
I
D
- Amperes
Fig. 6. Input Adm ittance
I
D
- Amperes
I
D
- Amperes
12
10
8
6
4
2
0
-50
-25
0
25
50
75
100
125
150
12
10
8
6
4
2
0
4
4.5
5
5.5
6
6.5
7
T
J
= 125
∫
C
25
∫
C
-40
∫
C
T
C
- Degrees Centigrade
© 2005 IXYS All rights reserved
V
G S
- Volts
IXFH 16N50P IXFA 16N50P
IXFP 16N50P
Fig. 7. Transconductance
24
50
45
20
T
J
= -40
∫
C
40
25
∫
C
125
∫
C
12
Fig. 8. Source Current vs.
Source-To-Drain Voltage
g
f s
- Siemens
I
S
- Amperes
16
35
30
25
20
15
10
5
T
J
= 25
∫
C
T
J
= 125
∫
C
8
4
0
0
2
4
6
8
10
12
14
16
18
0
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
I
D
- Amperes
V
S D
- Volts
Fig. 10. Capacitance
10000
f = 1MHz
C iss
Fig. 10. Gate Charge
10
8
Capacitance - picoFarads
1000
V
G S
- Volts
6
C oss
4
100
2
C rss
0
0
5
10
15
20
25
30
35
40
10
0
5
10
15
20
25
30
35
40
Q
G
- nanoCoulombs
Fig. 11. Forw ard-Bias
Safe Operating Area
100
1.00
V
D S
- Volts
Fig. 12. Maxim um Transient Therm al
Resistance
R
DS(on)
Limit
25µs
10
100µs
1ms
T
J
= 150∫C
T
C
= 25∫C
1
10
100
1000
0.01
0.1
1
10
100
1000
10ms
DC
R
( t h ) J C
-
∫
C / W
I
D
- Amperes
0.10
V
D S
- Volts
Pulse Width - milliseconds
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