BFG424F
NPN 25 GHz wideband transistor
Rev. 01 — 21 March 2006
Product data sheet
1. Product profile
1.1 General description
NPN double polysilicon wideband transistor with buried layer for low voltage applications
in a plastic, 4-pin dual-emitter SOT343F package.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
MSC895
1.2 Features
s
s
s
s
s
Very high power gain
Low noise figure
High transition frequency
Emitter is thermal lead
Low feedback capacitance
1.3 Applications
s
Radio Frequency (RF) front end wideband applications such as:
x
analog and digital cellular telephones
x
cordless telephones (Cordless Telephone (CT), Personal Handy-phone
System (PHS), Digital Enhanced Cordless Telecommunications (DECT), etc.)
x
radar detectors
x
pagers
x
Satellite Antenna TeleVison (SATV) tuners
x
high frequency oscillators e.g. Dielectric Resonator Oscillator (DRO) for Low Noise
Block (LNB)
1.4 Quick reference data
Table 1:
Symbol
V
CBO
V
CEO
I
C
P
tot
Quick reference data
Parameter
collector-base voltage
collector-emitter voltage
collector current
total power dissipation
T
sp
≤
90
°C
[1]
Conditions
open emitter
open base
Min
-
-
-
-
Typ
-
-
25
-
Max
10
4.5
30
135
Unit
V
V
mA
mW
Philips Semiconductors
BFG424F
NPN 25 GHz wideband transistor
Quick reference data
…continued
Parameter
DC current gain
collector-base
capacitance
transition frequency
maximum power gain
noise figure
Conditions
I
C
= 25 mA; V
CE
= 2 V;
T
j
= 25
°C
V
CB
= 2 V; f = 1 MHz
I
C
= 25 mA; V
CE
= 2 V;
f = 2 GHz; T
amb
= 25
°C
I
C
= 25 mA; V
CE
= 2 V;
f = 2 GHz; T
amb
= 25
°C
I
C
= 2 mA; V
CE
= 2 V;
f = 2 GHz;
Γ
S
=
Γ
opt
[2]
Table 1:
Symbol
h
FE
C
CBS
f
T
G
p(max)
NF
Min
50
-
-
-
-
Typ
80
102
25
23
1.2
Max
120
-
-
-
-
Unit
fF
GHz
dB
dB
[1]
[2]
T
sp
is the temperature at the soldering point of the emitter pins.
G
p(max)
is the maximum power gain, if K > 1. If K < 1 then G
p(max)
= Maximum Stable Gain (MSG), see
Figure 8.
2. Pinning information
Table 2:
Pin
1
2
3
4
Pinning
Description
emitter
base
emitter
collector
1, 3
2
1
mbb159
Simplified outline
3
4
Symbol
4
2
3. Ordering information
Table 3:
Ordering information
Package
Name
BFG424F
-
Description
plastic surface mounted flat pack package; reverse
pinning; 4 leads
Version
SOT343F
Type number
4. Marking
Table 4:
BFG424F
[1]
* = p: made in Hong Kong.
Marking
Marking code
[1]
NE*
Type number
BFG424F_1
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 21 March 2006
2 of 13
Philips Semiconductors
BFG424F
NPN 25 GHz wideband transistor
5. Limiting values
Table 5:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
[1]
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
total power dissipation
storage temperature
junction temperature
Conditions
open emitter
open base
open collector
T
sp
≤
90
°C
[1]
Min
-
-
-
-
-
−65
-
Max
10
4.5
1
30
135
+150
150
Unit
V
V
V
mA
mW
°C
°C
T
sp
is the temperature at the soldering point of the emitter pins.
6. Thermal characteristics
Table 6:
Symbol
R
th(j-sp)
[1]
Thermal characteristics
Parameter
thermal resistance from junction
to solder point
Conditions
T
sp
≤
90
°C
[1]
Typ
340
Unit
K/W
T
sp
is the temperature at the soldering point of the emitter pins.
200
P
tot
(mW)
150
001aad817
100
50
0
0
40
80
120
T
sp
(°C)
160
Fig 1. Power derating curve
BFG424F_1
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 21 March 2006
3 of 13
Philips Semiconductors
BFG424F
NPN 25 GHz wideband transistor
7. Characteristics
Table 7:
Characteristics
T
j
= 25
°
C; unless otherwise specified.
Symbol Parameter
V
(BR)CBO
collector-base
breakdown voltage
V
(BR)CEO
collector-emitter
breakdown voltage
V
(BR)EBO
open-collector
emitter-base
breakdown voltage
I
CBO
h
FE
C
CES
C
EBS
C
CBS
f
T
G
p(max)
|s
21
|
2
NF
collector-base
cut-off current
DC current gain
collector-emitter
capacitance
emitter-base
capacitance
collector-base
capacitance
Conditions
I
C
= 2.5
µA;
I
E
= 0 mA
I
C
= 1 mA; I
B
= 0 mA
I
E
= 2.5
µA;
I
C
= 0 mA
Min
10
4.5
1
Typ
-
-
-
Max
-
-
-
Unit
V
V
V
I
E
= 0 mA; V
CB
= 4.5 V
I
C
= 25 mA; V
CE
= 2 V
V
CB
= 2 V; f = 1 MHz
V
EB
= 0.5 V; f = 1 MHz
V
CB
= 2 V; f = 1 MHz
-
50
-
-
-
-
[1]
-
80
363
475
102
25
23
18.5
0.8
1.2
12
15
120
-
-
-
-
-
-
-
-
-
nA
fF
fF
fF
GHz
dB
dB
dB
dB
dBm
transition frequency I
C
= 25 mA; V
CE
= 2 V; f = 2 GHz;
T
amb
= 25
°C
maximum power
gain
I
C
= 25 mA; V
CE
= 2 V; f = 2 GHz;
T
amb
= 25
°C
-
-
-
-
insertion power gain I
C
= 25 mA; V
CE
= 2 V; f = 2 GHz;
T
amb
= 25
°C
noise figure
I
C
= 2 mA; V
CE
= 2 V;
f = 900 MHz;
Γ
S
=
Γ
opt
I
C
= 2 mA; V
CE
= 2 V; f = 2 GHz;
Γ
S
=
Γ
opt
P
L(1dB)
output power at
1 dB gain
compression
I
C
= 25 mA; V
CE
= 2 V; f = 2 GHz;
Z
S
= Z
S(opt)
; Z
L
= Z
L(opt)
[2]
-
IP3
[1]
[2]
third-order intercept I
C
= 25 mA; V
CE
= 2 V; f = 2 GHz;
point
Z
S
= Z
S(opt)
; Z
L
= Z
L(opt)
[2]
-
22
-
dBm
G
p(max)
is the maximum power gain, if K
>
1. If K
<
1 then G
p(max)
= MSG, see
Figure 8.
Z
S
is optimized for noise; Z
L
is optimized for gain.
BFG424F_1
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 21 March 2006
4 of 13
Philips Semiconductors
BFG424F
NPN 25 GHz wideband transistor
40
I
C
(mA)
30
001aad818
120
h
FE
001aad819
(1)
(2)
(3)
(4)
80
(1)
(2)
(3)
20
(5)
(6)
40
10
(7)
(8)
0
0
1
2
3
4
V
CE
(V)
5
0
0
10
20
30
I
C
(mA)
40
(1) I
B
= 400
µA
(2) I
B
= 350
µA
(3) I
B
= 300
µA
(4) I
B
= 250
µA
(5) I
B
= 200
µA
(6) I
B
= 150
µA
(7) I
B
= 100
µA
(8) I
B
= 50
µA
(1) V
CE
= 3 V
(2) V
CE
= 2 V
(3) V
CE
= 1 V
Fig 2. Collector current as a function of
collector-emitter voltage; typical values
200
C
CBS
(fF)
160
Fig 3. DC current gain as a function of collector
current; typical values
001aad820
120
80
40
0
0
1
2
3
4
V
CB
(V)
5
f = 1 MHz
Fig 4. Collector-base capacitance as a function of collector-base voltage; typical values
BFG424F_1
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 21 March 2006
5 of 13
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