1N5804USE3 datasheet, PDF - EEWORLD Datasheet

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1N5804USE3: DescriptionRectifier Diode, Avalanche, 1 Element, 1A, 100V V(RRM), Silicon, ROHS COMPLIANT, HERMETIC SEALED, GLASS, A, MELF-2; CategoryDiscrete semiconductor diode; File Size630KB，5 Pages; ManufacturerMicrosemi; Websitehttps://www.microsemi.com; Environmental Compliance

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1N5804USE3 Overview

Rectifier Diode, Avalanche, 1 Element, 1A, 100V V(RRM), Silicon, ROHS COMPLIANT, HERMETIC SEALED, GLASS, A, MELF-2

1N5804USE3 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Microsemi
package instruction	ROHS COMPLIANT, HERMETIC SEALED, GLASS, A, MELF-2
Reach Compliance Code	compliant
ECCN code	EAR99
Other features	HIGH RELIABILITY
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	0.875 V
JESD-30 code	O-LELF-R2
JESD-609 code	e3
Maximum non-repetitive peak forward current	35 A
Number of components	1
Number of terminals	2
Maximum operating temperature	175 °C
Minimum operating temperature	-65 °C
Maximum output current	1 A
Package body material	GLASS
Package shape	ROUND
Package form	LONG FORM
Peak Reflow Temperature (Celsius)	260
Maximum repetitive peak reverse voltage	100 V
Maximum reverse recovery time	0.025 µs
surface mount	YES
technology	AVALANCHE
Terminal surface	MATTE TIN OVER NICKEL
Terminal form	WRAP AROUND
Terminal location	END
Maximum time at peak reflow temperature	30

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1N5802US, 1N5804US, 1N5806US and URS

VOIDLESS HERMETICALLY SEALED ULTRAFAST

RECOVERY GLASS RECTIFIERS

Qualified per MIL-PRF-19500/477

Qualified Levels:

JAN, JANTX,

JANTXV and JANS

Available on

commercial

versions

DESCRIPTION

This “Ultrafast Recovery” rectifier diode series is military qualified and is ideal for high-reliability

applications where a failure cannot be tolerated. The industry-recognized 2.5 amp rated rectifiers

with working peak reverse voltages from 50 to 150 volts are hermetically sealed with voidless glass

construction using an internal

“Category 1”

metallurgical bond. These devices are available in both

surface mount MELF and leaded package configurations. Microsemi also offers numerous other

rectifier products to meet higher and lower current ratings with various recovery time requirements

including standard, fast and ultrafast device types in both through-hole and surface mount

packages.

Important:

For the latest information, visit our website

http://www.microsemi.com.

FEATURES

•

JEDEC registered surface mount equivalent of1N5802, 1N5804, 1N5806 series.

Voidless hermetically sealed glass package.

Quadruple-layer passivation

Extremely robust construction.

Internal

“Category 1”

metallurgical bonds.

JAN, JANTX, JANTXV and JANS qualifications are available per MIL-PRF-19500/477.

RoHS compliant versions available (commercial grade only).

“A” or D-5A

Package (US)

APPLICATIONS / BENEFITS

Ultrafast recovery 2.5 amp rectifier series from 50 to 150 V.

Military, space and other high-reliability applications.

Switching power supplies or other applications requiring extremely fast switching & low forward

loss.

High forward surge current capability.

Low thermal resistance.

Controlled avalanche with peak reverse power capability.

Inherently radiation hard as described in Microsemi

MicroNote 050.

“A” Package

(URS)

Also available in:

“A” Package

(axial-leaded)

1N5802, 04 and 06

MAXIMUM RATINGS

@ T

= 25

C unless otherwise specified

Parameters/Test Conditions

Junction and Storage Temperature

Thermal Resistance Junction-to-End Cap

(see

Figure 1)

Working Peak Reverse Voltage:

1N5802US & URS

1N5804US & URS

1N5806US & URS

(3)

Forward Surge Current

Average Rectified Output Current

(1)

@ T

= +75 C

Average Rectified Output-Current

(2)

@ T

= +55 C

Capacitance

@ V

= 10 V, f = 1 MHz; Vsig = 50 mV (p-p)

(4)

Reverse Recovery Time

Solder Temperature @ 10 s

Symbol

and T

STG

ӨJEC

RWM

Value

-65 to +175

100

150

2.5

1.0

260

Unit

C/W

FSM

MSC – Lawrence

6 Lake Street,

Lawrence, MA 01841

Tel: 1-800-446-1158 or

(978) 620-2600

Fax: (978) 689-0803

MSC – Ireland

Gort Road Business Park,

Ennis, Co. Clare, Ireland

Tel: +353 (0) 65 6840044

Fax: +353 (0) 65 6822298

Website:

www.microsemi.com

Notes:

1. I

is rated at 2.5 A @ T

= 75

C. Derate at 50 mA/

C for T

above 125

2. I

is rated at 1.0 A @ T

= 55

C for PC boards where thermal resistance from mounting point to ambient

is sufficiently controlled (R

ӨJX

< 154

C/W) where T

J(max)

175

C is not exceeded. Derate at 8.33 mA/

for T

above 55

3. T

= 25

C @ I

= 1.0 A and V

RWM

for ten 8.3 ms surges at 1 minute intervals.

4. I

= 0.5 A, I

R(REC)

= .05 A.

T4-LDS-0211-1, Rev. 1 (111900)

Page 1 of 5

1N5804USE3 Related Products

	1N5804USE3	JANS1N5804URS	C1812X911K102BO	JANS1N5802URS	JANS1N5806URS	1N5806URSE3	1N5802URSE3	1N5804URSE3
Description	Rectifier Diode, Avalanche, 1 Element, 1A, 100V V(RRM), Silicon, ROHS COMPLIANT, HERMETIC SEALED, GLASS, A, MELF-2	Rectifier Diode, 1 Element, 1A, 100V V(RRM), Silicon, HERMETIC SEALED, GLASS, MELF-2	Ceramic Capacitor, Multilayer, Ceramic, 1000V, 10% +Tol, 10% -Tol, X7R, -/+15ppm/Cel TC, 0.00091uF, 1812,	Rectifier Diode, 1 Element, 1A, 50V V(RRM), Silicon, HERMETIC SEALED, GLASS, MELF-2	Rectifier Diode, 1 Element, 1A, 150V V(RRM), Silicon, HERMETIC SEALED, GLASS, MELF-2	Rectifier Diode, Avalanche, 1 Element, 1A, 150V V(RRM), Silicon, ROHS COMPLIANT, HERMETIC SEALED, GLASS, A, MELF-2	Rectifier Diode, Avalanche, 1 Element, 1A, 50V V(RRM), Silicon, ROHS COMPLIANT, HERMETIC SEALED, GLASS, A, MELF-2	Rectifier Diode, Avalanche, 1 Element, 1A, 100V V(RRM), Silicon, ROHS COMPLIANT, HERMETIC SEALED, GLASS, A, MELF-2
Is it Rohs certified?	conform to	incompatible	conform to	incompatible	incompatible	conform to	conform to	conform to
package instruction	ROHS COMPLIANT, HERMETIC SEALED, GLASS, A, MELF-2	O-LELF-R2	, 1812	O-LELF-R2	HERMETIC SEALED, GLASS, MELF-2	ROHS COMPLIANT, HERMETIC SEALED, GLASS, A, MELF-2	O-LELF-R2	ROHS COMPLIANT, HERMETIC SEALED, GLASS, A, MELF-2
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant	compliant	compliant	compliant
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Number of terminals	2	2	2	2	2	2	2	2
Maximum operating temperature	175 °C	175 °C	125 °C	175 °C	175 °C	175 °C	175 °C	175 °C
Minimum operating temperature	-65 °C	-65 °C	-55 °C	-65 °C	-65 °C	-65 °C	-65 °C	-65 °C
Package form	LONG FORM	LONG FORM	SMT	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM
Maker	Microsemi	Microsemi	-	Microsemi	Microsemi	Microsemi	Microsemi	Microsemi
Other features	HIGH RELIABILITY	HIGH RELIABILITY	-	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY
Shell connection	ISOLATED	ISOLATED	-	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED
Configuration	SINGLE	SINGLE	-	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Diode component materials	SILICON	SILICON	-	SILICON	SILICON	SILICON	SILICON	SILICON
Diode type	RECTIFIER DIODE	RECTIFIER DIODE	-	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
JESD-30 code	O-LELF-R2	O-LELF-R2	-	O-LELF-R2	O-LELF-R2	O-LELF-R2	O-LELF-R2	O-LELF-R2
JESD-609 code	e3	e0	e3	e0	e0	-	-	-
Number of components	1	1	-	1	1	1	1	1
Maximum output current	1 A	1 A	-	1 A	1 A	1 A	1 A	1 A
Package body material	GLASS	GLASS	-	GLASS	GLASS	GLASS	GLASS	GLASS
Package shape	ROUND	ROUND	-	ROUND	ROUND	ROUND	ROUND	ROUND
Maximum repetitive peak reverse voltage	100 V	100 V	-	50 V	150 V	150 V	50 V	100 V
Maximum reverse recovery time	0.025 µs	0.025 µs	-	0.025 µs	0.025 µs	0.025 µs	0.025 µs	0.025 µs
surface mount	YES	YES	-	YES	YES	YES	YES	YES
Terminal surface	MATTE TIN OVER NICKEL	Tin/Lead (Sn/Pb) - with Nickel (Ni) barrier	Matte Tin (Sn) - with Nickel (Ni) barrier	Tin/Lead (Sn/Pb) - with Nickel (Ni) barrier	Tin/Lead (Sn/Pb) - with Nickel (Ni) barrier	-	-	-
Terminal form	WRAP AROUND	WRAP AROUND	-	WRAP AROUND	WRAP AROUND	WRAP AROUND	WRAP AROUND	WRAP AROUND
Terminal location	END	END	-	END	END	END	END	END

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