K4H561638F-ULCC0 datasheet, PDF

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K4H561638F-ULCC0: DescriptionDDR DRAM, 16MX16, 0.65ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, ROHS COMPLIANT, TSOP2-66; Categorystorage storage; File Size366KB，24 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/; Environmental Compliance

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K4H561638F-ULCC0 Overview

DDR DRAM, 16MX16, 0.65ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, ROHS COMPLIANT, TSOP2-66

K4H561638F-ULCC0 Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	SAMSUNG
Parts packaging code	TSOP2
package instruction	TSOP2, TSSOP66,.46
Contacts	66
Reach Compliance Code	compliant
ECCN code	EAR99
access mode	FOUR BANK PAGE BURST
Maximum access time	0.65 ns
Other features	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	200 MHz
I/O type	COMMON
interleaved burst length	2,4,8
JESD-30 code	R-PDSO-G66
length	22.22 mm
memory density	268435456 bit
Memory IC Type	DDR DRAM
memory width	16
Humidity sensitivity level	2
Number of functions	1
Number of ports	1
Number of terminals	66
word count	16777216 words
character code	16000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	16MX16
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	TSOP2
Encapsulate equivalent code	TSSOP66,.46
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE
Peak Reflow Temperature (Celsius)	260
power supply	2.6 V
Certification status	Not Qualified
refresh cycle	8192
Maximum seat height	1.2 mm
self refresh	YES
Continuous burst length	2,4,8
Maximum slew rate	0.38 mA
Maximum supply voltage (Vsup)	2.7 V
Minimum supply voltage (Vsup)	2.5 V
Nominal supply voltage (Vsup)	2.6 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal form	GULL WING
Terminal pitch	0.65 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	40
width	10.16 mm

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DDR SDRAM 256Mb F-die (x8, x16)

DDR SDRAM

256Mb F-die DDR SDRAM Specification

66 TSOP-II

INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,

AND IS SUBJECT TO CHANGE WITHOUT NOTICE.

NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,

TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL

INFORMATION IN THIS DOCUMENT IS PROVIDED

ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND.

1. For updates or additional information about Samsung products, contact your nearest Samsung office.

2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar

applications where Product failure could result in loss of life or personal or physical harm, or any military or

defense application, or any governmental procurement to which special terms or provisions may apply.

3. Any system or application incorporating Samsung Memory Product(s) shall be designed to use or access the

memory addresses in a balanced and proportionate manner. Disproportionate, excessive and/or repeated

access to a particular address may result in reduction of product life.

* Samsung Electronics reserves the right to change products or specification without notice.

Rev. 1.4 July. 2005

DDR SDRAM 256Mb F-die (x8, x16)

Table of Contents

DDR SDRAM

1.0 Key Features ...............................................................................................................................4

2.0 Ordering Information ...................................................................................................................4

3.0 Operating Frequencies................................................................................................................4

4.0 Pin Description ............................................................................................................................5

5.0 Package Physical Dimension .....................................................................................................6

6.0 Block Diagram (8Mbit x8 / 4Mbit x16 I/O x4 Banks) ..................................................................7

7.0 Input/Output Function Description ............................................................................................8

8.0 Command Truth Table.................................................................................................................9

9.0 General Description...................................................................................................................10

10.0 Absolute Maximum Rating .....................................................................................................10

11.0 DC Operating Conditions ........................................................................................................10

12.0 DDR SDRAM Spec Items & Test Conditions .........................................................................11

13.0 Input/Output Capacitance ......................................................................................................11

14.0 Detailed test condition for DDR SDRAM IDD1 & IDD7A ......................................................12

15.0 DDR SDRAM IDD spec table ..................................................................................................13

16.0 AC Operating Conditions .......................................................................................................14

17.0 AC Overshoot/Undershoot specification for Address and Control Pins............................14

18.0 Overshoot/Undershoot specification for Data, Strobe and Mask Pins...............................15

19.0 AC Timming Parameters & Specifications ...........................................................................16

20.0 System Characteristics for DDR SDRAM ..............................................................................17

21.0 Component Notes ....................................................................................................................18

22.0 System Notes ...........................................................................................................................20

23.0 IBIS : I/V Characteristics for Input and Output Buffers ........................................................21

Rev. 1.4 July. 2005

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