KM44C1012AP-8 datasheet, PDF - EEWORLD Datasheet

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KM44C1012AP-8: DescriptionStatic Column DRAM, 1MX4, 80ns, CMOS, PDIP20, PLASTIC, DIP-20; Categorystorage storage; File Size610KB，18 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/

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KM44C1012AP-8 Overview

Static Column DRAM, 1MX4, 80ns, CMOS, PDIP20, PLASTIC, DIP-20

KM44C1012AP-8 Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	SAMSUNG
Parts packaging code	DIP
package instruction	DIP, DIP20,.3
Contacts	20
Reach Compliance Code	unknown
ECCN code	EAR99
access mode	STATIC COLUMN
Maximum access time	80 ns
Other features	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I/O type	COMMON
JESD-30 code	R-PDIP-T20
JESD-609 code	e0
length	24.56 mm
memory density	4194304 bit
Memory IC Type	STATIC COLUMN DRAM
memory width	4
Number of functions	1
Number of ports	1
Number of terminals	20
word count	1048576 words
character code	1000000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	1MX4
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	DIP
Encapsulate equivalent code	DIP20,.3
Package shape	RECTANGULAR
Package form	IN-LINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	5 V
Certification status	Not Qualified
refresh cycle	1024
Maximum seat height	4.65 mm
Maximum standby current	0.001 A
Maximum slew rate	0.095 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
width	7.62 mm

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Description	Static Column DRAM, 1MX4, 80ns, CMOS, PDIP20, PLASTIC, DIP-20	Static Column DRAM, 1MX4, 70ns, CMOS, PDIP20, PLASTIC, DIP-20	Static Column DRAM, 1MX4, 100ns, CMOS, PDIP20, PLASTIC, DIP-20	Static Column DRAM, 1MX4, 70ns, CMOS, PDSO20, PLASTIC, SOJ-26/20	Static Column DRAM, 1MX4, 70ns, CMOS, PZIP20, PLASTIC, ZIP-20	Static Column DRAM, 1MX4, 100ns, CMOS, PZIP20, PLASTIC, ZIP-20	Static Column DRAM, 1MX4, 100ns, CMOS, PDSO20, PLASTIC, SOJ-26/20	Static Column DRAM, 1MX4, 80ns, CMOS, PDSO20, PLASTIC, SOJ-26/20	Static Column DRAM, 1MX4, 80ns, CMOS, PZIP20, PLASTIC, ZIP-20
Is it lead-free?	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible
Parts packaging code	DIP	DIP	DIP	SOJ	ZIP	ZIP	SOJ	SOJ	ZIP
package instruction	DIP, DIP20,.3	DIP, DIP20,.3	DIP, DIP20,.3	SOJ, SOJ20/26,.34	ZIP, ZIP20,.1	ZIP, ZIP20,.1	SOJ, SOJ20/26,.34	SOJ, SOJ20/26,.34	PLASTIC, ZIP-20
Contacts	20	20	20	20	20	20	20	20	20
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
access mode	STATIC COLUMN	STATIC COLUMN	STATIC COLUMN	STATIC COLUMN	STATIC COLUMN	STATIC COLUMN	STATIC COLUMN	STATIC COLUMN	STATIC COLUMN
Maximum access time	80 ns	70 ns	100 ns	70 ns	70 ns	100 ns	100 ns	80 ns	80 ns
Other features	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I/O type	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON
JESD-30 code	R-PDIP-T20	R-PDIP-T20	R-PDIP-T20	R-PDSO-J20	R-PZIP-T20	R-PZIP-T20	R-PDSO-J20	R-PDSO-J20	R-PZIP-T20
JESD-609 code	e0	e0	e0	e0	e0	e0	e0	e0	e0
length	24.56 mm	24.56 mm	24.56 mm	17.145 mm	26.165 mm	26.165 mm	17.145 mm	17.145 mm	26.165 mm
memory density	4194304 bit	4194304 bit	4194304 bit	4194304 bit	4194304 bit	4194304 bit	4194304 bit	4194304 bit	4194304 bit
Memory IC Type	STATIC COLUMN DRAM	STATIC COLUMN DRAM	STATIC COLUMN DRAM	STATIC COLUMN DRAM	STATIC COLUMN DRAM	STATIC COLUMN DRAM	STATIC COLUMN DRAM	STATIC COLUMN DRAM	STATIC COLUMN DRAM
memory width	4	4	4	4	4	4	4	4	4
Number of functions	1	1	1	1	1	1	1	1	1
Number of ports	1	1	1	1	1	1	1	1	1
Number of terminals	20	20	20	20	20	20	20	20	20
word count	1048576 words	1048576 words	1048576 words	1048576 words	1048576 words	1048576 words	1048576 words	1048576 words	1048576 words
character code	1000000	1000000	1000000	1000000	1000000	1000000	1000000	1000000	1000000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C
organize	1MX4	1MX4	1MX4	1MX4	1MX4	1MX4	1MX4	1MX4	1MX4
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	DIP	DIP	DIP	SOJ	ZIP	ZIP	SOJ	SOJ	ZIP
Encapsulate equivalent code	DIP20,.3	DIP20,.3	DIP20,.3	SOJ20/26,.34	ZIP20,.1	ZIP20,.1	SOJ20/26,.34	SOJ20/26,.34	ZIP20,.1
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	IN-LINE	IN-LINE	SMALL OUTLINE	IN-LINE	IN-LINE	SMALL OUTLINE	SMALL OUTLINE	IN-LINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
power supply	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
refresh cycle	1024	1024	1024	1024	1024	1024	1024	1024	1024
Maximum seat height	4.65 mm	4.65 mm	4.65 mm	3.68 mm	10.16 mm	10.16 mm	3.68 mm	3.68 mm	10.16 mm
Maximum standby current	0.001 A	0.001 A	0.001 A	0.001 A	0.001 A	0.001 A	0.001 A	0.001 A	0.001 A
Maximum slew rate	0.095 mA	0.105 mA	0.085 mA	0.105 mA	0.105 mA	0.085 mA	0.085 mA	0.095 mA	0.095 mA
Maximum supply voltage (Vsup)	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V
Minimum supply voltage (Vsup)	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V
Nominal supply voltage (Vsup)	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V
surface mount	NO	NO	NO	YES	NO	NO	YES	YES	NO
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	J BEND	THROUGH-HOLE	THROUGH-HOLE	J BEND	J BEND	THROUGH-HOLE
Terminal pitch	2.54 mm	2.54 mm	2.54 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm
Terminal location	DUAL	DUAL	DUAL	DUAL	ZIG-ZAG	ZIG-ZAG	DUAL	DUAL	ZIG-ZAG
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
width	7.62 mm	7.62 mm	7.62 mm	7.62 mm	2.96 mm	2.96 mm	7.62 mm	7.62 mm	2.96 mm
Maker	SAMSUNG	-	SAMSUNG	SAMSUNG	SAMSUNG	SAMSUNG	SAMSUNG	SAMSUNG	SAMSUNG

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