LNJ8L4C38RA
Hight Bright Surface Mounting Chip LED
3528 (PLCC4) Type
Absolute Maximum Ratings
T
a
= 25°C
Parameter
Power dissipation
Forward current
Pulse forward current
*
Reverse voltage
Junction temperature
Thermal resistance
Operating ambient temperature
Storage temperature
Symbol
P
D
I
F
I
FP
V
R
T
j
R
th
T
opr
T
stg
Rating
190
70
100
5
125
130
–40 to +105
–40 to +125
Unit
mW
mA
mA
V
°C
°C/W
°C
°C
Lighting Color
Red
Note) *: The condition of I
FP
is duty 10%, Pulse width 1 msec.
Electro-Optical Characteristics
T
a
= 25°C±3°C
Parameter
Luminous intensity
*1
Reverse current
Forward voltage
*2
Peak emission wavelength
Dominant emission wavelength
*3
Spectral half band width
Note) *1: Measurement tolerance:
±11%
*2: Measurement tolerance:
±0.15
V
*3: Measurement tolerance:
±2
nm
10
4
Symbol
I
O
I
R
V
F
λ
P
λ
d
Δλ
I
F
= 50 mA
V
R
= 5 V
I
F
= 50 mA
I
F
= 50 mA
I
F
= 50 mA
I
F
= 50 mA
Conditions
Min
2 260
2.05
612
Typ
2 800
2.30
623
614
20
Max
4 500
10
2.50
624
Unit
mcd
µA
V
nm
nm
nm
I
O
I
F
10
2
I
F
V
F
Relative luminous intensity (%)
1.5
2.0
2.5
3.0
10
3
Relative luminous intensity
T
a
Luminous intensity I
O
(mcd)
10
3
Forward current I
F
(mA)
10
10
2
10
2
10
1
10
10
2
1
1.0
10
−40
−20
0
20
40
60
80
100
Forward current I
F
(mA)
Forward voltage V
F
(V)
80
Ambient temperature T
a
(°C)
Relative luminous intensity
λ
P
Relative luminous intensity (%)
100
I
F
T
a
Forward current I
F
(mA)
80
60
50°
40
60°
70°
80°
550
600
650
90°
700 100
80
60
Directive characteristics
30°
40°
20° 10°
0°
80°
60°
40°
20°
40
20
0
20
40
60
80
10° 20°
30°
40°
50°
60°
70°
60
40
20
20
0
500
80°
90°
100
0
0
20
40
60
80
100
120
Peak emission wavelength
λ
P
(nm)
Relative luminous intensity (%)
Ambient temperature T
a
(°C)
Publication date: November 2016
Ver. BEK
1
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
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Consult our sales staff in advance for information on the following applications:
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Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
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