A Business Partner of Renesas Electronics Corporation.
PS9331L,PS9331L2
DESCRIPTION
Specifications in this document are tentative and subject to change.
Preliminary Data Sheet
2.5 A OUTPUT CURRENT, HIGH CMR, IGBT GATE DRIVE, 6-PIN SDIP PHOTOCOUPLER
Nov 30, 2012
The PS9331L and PS9331L2 are optical coupled isolators containing a GaAlAs LED on the input side and a photo
diode, a signal processing circuit and power MOSFETs on the output side on one chip.
The PS9331L and PS9331L2 are in 6-pin plastic SDIP (Shrink Dual In-line Package). The PS9331L2 has 8 mm
creepage distance. The mount area of 6-pin plastic SDIP is half size of 8-pin DIP.
The PS9331L and PS9331L2 are designed specifically for high common mode transient immunity (CMR) and high
switching speed. It is suitable for driving IGBTs and MOS FETs.
The PS9331L is lead bending type (Gull-wing) for surface mounting.
The PS9331L2 is lead bending type for long creepage distance (Gull-wing) for surface mount.
FEATURES
•
•
•
•
•
•
•
•
Long creepage distance (8 mm MIN.: PS9331L2)
Half size of 8-pin DIP
Peak output current (2.5 A MAX., 2.0 A MIN.)
High speed switching (t
PLH
,
t
PHL
= 200 ns MAX.)
High common mode transient immunity (CM
H
, CM
L
=
±50
kV/
µ
s MIN.)
Operating Ambient Temperature (125
ºC)
Embossed tape product : PS9331L-E3, PS9331L2-E3: 2 000 pcs/reel
Pb-Free product
APPLICATIONS
•
•
•
IGBT, Power MOS FET Gate Driver
Industrial inverter
AC Servo
Page 1 of 12
A Business Partner of Renesas Electronics Corporation.
Preliminary document
Specifications in this document are tentative and subject to change.
PS9331L, PS9331L2
PACKAGE DIMENSIONS (UNIT: mm)
Lead Bending Type (Gull-wing) For Surface Mount
Chapter Title
Lead Bending Type (Gull-wing) For Long Creepage Distance (Surface Mount)
Page 2 of 12
A Business Partner of Renesas Electronics Corporation.
Preliminary document
Specifications in this document are tentative and subject to change.
PS9331L, PS9331L2
PHOTOCOUPLER CONSTRUCTION
Parameter
Air Distance (MIN.)
Outer Creepage Distance (MIN.)
Isolation Distance (MIN.)
PS9331L
7 mm
7 mm
0.4 mm
PS9331L2
8 mm
8 mm
0.4 mm
Chapter Title
MARKING EXAMPLE
Page 3 of 12
A Business Partner of Renesas Electronics Corporation.
Preliminary document
Specifications in this document are tentative and subject to change.
PS9331L, PS9331L2
ABSOLUTE MAXIMUM RATINGS (T
A
= 25C, unless otherwise specified)
Parameter
Diode
Forward Current
Peak Transient Forward Current
(Pulse Width < 1
s)
Reverse Voltage
Power Dissipation
Detector
*1
*2
Chapter Title
Symbol
I
F
I
F (TRAN)
V
R
P
D
I
OH (PEAK)
I
OL (PEAK)
(V
CC
V
EE
)
V
O
*3
*2
Ratings
25
1.0
5
45
2.5
2.5
0 to 35
0 to V
CC
250
5 000
50
40
to +125
55
to +150
Unit
mA
A
V
mW
A
A
V
V
mW
Vr.m.s.
kHz
C
C
High Level Peak Output Current
Low Level Peak Output Current
Supply Voltage
Output Voltage
Power Dissipation
P
C
BV
f
T
A
T
stg
Isolation Voltage
*4
Operating Frequency
Operating Ambient Temperature
Storage Temperature
Notes: *1.
*2.
*3.
*4.
Reduced to 1.2 mW/C at T
A
= 110C or more.
Maximum pulse width = 10
s, Maximum duty cycle = 0.5%
Reduced to 3.9 mW/C at T
A
= 85C or more.
AC voltage for 1 minute at T
A
= 25C, RH = 60% between input and output.
Pins 1-3 shorted together, 4-6 shorted together.
RECOMMENDED OPERATING CONDITIONS
Parameter
Supply Voltage
Forward Current (ON)
Forward Voltage (OFF)
Operating Ambient Temperature
Symbol
(V
CC
V
EE
)
I
F (ON)
V
F (OFF)
T
A
MIN.
15
7
2
40
10
TYP.
MAX.
30
16
0.8
125
Unit
V
mA
V
C
Page 4 of 12
A Business Partner of Renesas Electronics Corporation.
Preliminary document
Specifications in this document are tentative and subject to change.
PS9331L, PS9331L2
Chapter Title
ELECTRICAL CHARACTERISTICS (at RECOMMENDED OPERATING CONDITIONS,
V
EE
= GND, unless otherwise specified)
Parameter
Diode
Forward Voltage
Reverse Current
Input Capacitance
Detector
High Level Output Current
Low Level Output Current
High Level Output Voltage
Low Level Output Voltage
High Level Supply Current
Low Level Supply Current
Coupled
Threshold Input Current
(L
H)
Threshold Input Voltage
(H
L)
Notes: *1.
*2.
*3.
*4.
Symbol
V
F
I
R
C
IN
I
OH
I
OL
V
OH
V
OL
I
CCH
I
CCL
I
FLH
V
FHL
Conditions
I
F
= 10 mA, T
A
= 25C
V
R
= 3 V, T
A
= 25C
f = 1 MHz, V
F
= 0 V
V
O
= (V
CC
4 V)
*2
*3
*2
MIN.
1.35
TYP.
*1
MAX.
1.75
10
Unit
V
1.56
30
A
pF
A
A
V
0.5
2.0
0.5
2.0
*4
2.0
2.0
V
O
= (V
CC
15 V)
V
O
= (V
EE
+ 15 V)
V
O
= (V
EE
+ 2.5 V)
*3
I
F
= 10 mA, I
O
= -100 mA
I
F
= 0 mA, I
O
= 100 mA
I
F
= 10 mA, I
O
= 0 mA
I
F
= 0 mA, I
O
= 0 mA
I
O
= 0 mA, V
O
> 5 V
I
O
= 0 mA, V
O
< 5 V
V
CC
3.0 V
CC
1.3
0.1
1.2
1.2
1.8
0.8
0.5
2.0
2.0
5.0
V
mA
mA
mA
V
Typical values at T
A
= 25C, V
CC
V
EE
= 30 V.
Maximum pulse width = 50
s, Maximum duty cycle = 0.5%.
Maximum pulse width = 10
s, Maximum duty cycle = 0.2%.
V
OH
is measured with the DC load current in this testing.
SWITCHING CHARACTERISTICS (at RECOMMENDED OPERATING CONDITIONS,
V
EE
= GND, unless otherwise specified)
Parameter
Propagation Delay Time (L
H)
Propagation Delay Time (H
L)
Pulse Width Distortion (PWD)
Propagation Delay Time
(Difference Between Any Two
Products)
Rise Time
Fall Time
Common Mode Transient
Immunity at High Level Output
Common Mode Transient
Immunity at Low Level Output
Symbol
t
PLH
t
PHL
|t
PHL
t
PLH
|
t
PHL
t
PLH
Conditions
R
g
= 10
,
C
g
= 10 nF,
f = 10 kHz,
Duty Cycle = 50% ,
I
F
= 10 mA
90
*2
MIN.
TYP.
*1
MAX.
200
200
75
90
Unit
ns
ns
ns
ns
150
150
t
r
t
f
|CM
H
|
|CM
L
|
T
A
= 25C, I
F
= 10 mA,
V
CC
= 30 V, V
CM
= 1.5 kV
T
A
= 25C, I
F
= 0 mA,
V
CC
= 30 V, V
CM
= 1.5 kV
50
50
40
40
ns
ns
kV/
s
kV/
s
Notes: *1. Typical values at T
A
= 25C, V
CC
V
EE
= 30 V.
*2. This load condition is equivalent to the IGBT load at 1 200 V/75 A.
Page 5 of 12
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