Sirenza Microdevices SNA-376 is a GaAs monolithic broad-
band amplifier (MMIC) housed in a low-cost surface mount-
able stripline package. This amplifier provides 22dB of gain
when biased at 35mA.
External DC decoupling capacitors determine low frequency
response. The use of an external resistor allows for bias
flexibility and stability.
These unconditionally stable amplifiers are designed for use
as general purpose 50 ohm gain blocks. Also available in chip
form (SNA-300), its small size (0.33mm x 0.33mm) and gold
metallization make it an ideal choice for use in hybrid circuits.
Output Power vs. Frequency
12
11
SNA-376
DC-3 GHz, Cascadable
GaAs MMIC Amplifier
Product Features
Cascadable 50 Ohm Gain Block
22dB Gain, +10dBm P1dB
1.5:1 Input and Output VSWR
Operates From Single Supply
Low Cost Stripline Mount Ceramic Package
Hermetically Sealed
Applications
PA Driver Amplifier
Cellular, PCS, GSM, UMTS
IF Amplifier
Wireless Data, Satellite
Units
dB
dB
dB
dB
GHz
dBm
dBm
dB
dBm
10
9
8
0.1
0.5
1
1.5
2
4
6
8
10
GHz
Sy mbol
G
P
G
F
BW3dB
P
1dB
Parameter
Small Signal Pow er Gain
Gain Flatness
3dB Bandw idth
Output Pow er at 1dB Compression
Frequency
850 M Hz
1950 M Hz
2400 M Hz
0.1-3 GHz
Min.
21.0
Ty p.
23.0
22.0
21.5
+/-
1.5
Max.
3.0
1950 M
Hz
1950 M
Hz
1950 M
Hz
0.1-3 GHz
0.1-10 GHz
3.3
30
10.0
23.0
4.0
1.5:1
23.0
3.7
35
-0
.003
O
IP
3
NF
VSWR
ISOL
V
D
Output
Third Order Intercept Point
Noise Figure
Input / Output
Reverse Isolation
-
dB
V
Device Operating Voltage
Device Operating Current
Device
Gain
Temperature Coefficient
4.3
40
I
D
dG/dT
mA
dB
/°C
°C/W
R
TH
, j-l
Thermal Resistance (junction to lead)
400
Test Conditions:
V
S
= 8 V
R
BIAS
= 120 Ohms
I
D
= 35 mA Typ.
T
L
= 25ºC
OIP
3
Tone Spacing = 1 MHz, Pout per tone = 0 dBm
Z
S
= Z
L
= 50 Ohms
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of
this information, and all such information shall be entirely at the users own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are
implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc..
All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
1
http://www.sirenza.com
EDS-102433 Rev A
Preliminary
SNA-376 DC-3 GHz Cascadable MMIC Amplifier
Typical Performance at 25° C (Vds = 3.7V, Ids = 35mA)
|S11| vs. Frequency
0
-10
23
21
|S21| vs. Frequency
dB
-20
-30
-40
0.1
0.5
1
1.5
2
2.5
3
3.5
4
dB
19
17
15
0.1
0.5
1
1.5
2
2.5
3
3.5
4
GHz
GHz
|S12| vs. Frequency
0
-5
-10
0
|S22| vs. Frequency
-10
dB
-15
-20
dB
-20
-30
-25
-30
0.1
0.5
1
1.5
2
2.5
3
3.5
4
-40
0.1
0.5
1
1.5
2
2.5
3
3.5
4
GHz
GHz
Noise Figure vs. Frequency
5
4.5
TOIP vs. Frequency
26
24
dB
4
3.5
3
0.1
0.5
1.0
1.5
2.0
2.5
3.0
dBm
22
20
0.5
1
1.5
2
2.5
3
3.5
4
GHz
GHz
GHz
Absolute Maximum Ratings
Parameter
Absolute Limit
70
mA
6V
+10 dBm
+
150
°C
-40°C to +85°C
+150°C
Device Voltage vs. Id
5
4.5
Max.
Device Current
(I
D
)
Max.
Device
Voltage (V
D
)
Max.
RF Input Pow er
Max.
Junction Temp
. (T
J
)
Operating Temp
. Range (T
L
)
Vdc
4
3.5
3
20
25
30
35
40
45
50
Max.
Storage Temp
.
mA
Operation of this device beyond any one of these limits may
cause permanent damage. For reliable continous operation,
the device voltage and current must not exceed the maximum
operating values specified in the table on page one.
Bias Conditions should also satisfy the follow ing expression:
I
D
V
D
< (T
J
- T
L
) / R
TH
, j-l
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
2
http://www.sirenza.com
EDS-102433 Rev A
Preliminary
SNA-376 DC-3 GHz Cascadable MMIC Amplifier
Application Circuit Element Values
Typical Application Circuit
R
BIAS
1 uF
1000
pF
Reference
Designator
Frequency (Mhz)
500
850
1950
2400
3500
C
B
220 pF
100 pF
68 nH
100 pF
68 pF
33 nH
68 pF
22 pF
22 nH
56 pF
22 pF
18 nH
39 pF
15 pF
15 nH
C
D
L
C
C
D
L
C
RF in
C
B
1
4
SNA-376
3
C
B
RF out
Recommended Bias Resistor Values for I
D
=35mA
R
BIAS
=( V
S
-V
D
) / I
D
Supply Voltage(V
S
)
R
BIAS
5V
36
6V
68
8V
120
10 V
180
2
Note: R
BIAS
provides DC bias stability over temperature.
Simplified Schematic of MMIC
Pin #
Function
RF IN
Description
RF input pin. This pin requires the use
of an external DC blocking capacitor
chosen for the frequency of operation.
Connection to ground. For optimum RF
performance, use via holes as close to
ground leads as possible to reduce lead
inductance.
Part Identification Marking
The part will be marked with an S3 designator on the
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