1M x 32 FLASH MODULE
PUMA 68F32006/A-90/12/15
11403 West Bernado Court, Suite 100, San Diego, CA 92127.
Tel No: (619) 674 2233, Fax No: (619) 674 2230
Issue 4.2 : December 1999
A version 'A' with four independant write enables
(WE1-4) is available.
Features
•
Fast Access Times of 90/120/150 ns.
•
Output Configurable as 32 / 16 / 8 bit wide.
•
Commercial, Industrial, or Military (Restricted) grade.
•
Automatic Write/Erase by Embedded Algorithm - end of
Write/Erase indicated by DATA Polling and Toggle Bit.
•
Flexible Sector Erase Architecture - 64K byte sector
size, with hardware protection of sector groups.
•
Single Byte Program of 7µs (Typ.)
•
Erase/Write Cycle Endurance 100,000 (Min.) - E variant.
Description
The PUMA 68F32006 is a high density 32Mbit
CMOS 5V Only FLASH memory organised as
1M x 32 in a JEDEC 68 pin surface mount
PLCC, with read access times of 90, 120, and
150ns.
The output width is user configurable as 8 , 16
or 32 bits using four Chip Selects (CE1~4) for
optimum application flexibility.
The module incorporates Embedded Algorithms
for Program and Erase with Sector architecture
(64K sector) and supports full chip erase.
The device also features hardware sector
protection, which disables both program and
erase operations in any of the 64 sectors on the
module.
Block Diagram (see page 24 for 'A' version)
Pin Definition (see page 24 for 'A' version)
NC
A0
A1
A2
A3
A4
A5
CS3
GND
CS4
WE
A6
A7
A8
A9
A10
Vcc
A0~A19
OE
WE
1M x 8
FLASH
CS1
CS2
CS3
CS4
D0~7
D8~15
D16~23
D24~31
1M x 8
FLASH
1M x 8
FLASH
1M x 8
FLASH
D0
D1
D2
D3
D4
D5
D6
D7
GND
D8
D9
D10
D11
D12
D13
D14
D15
9 8 7 6 5 4 3 2 1 68 67 66 65 64 63 62 61
10
60
11
59
12
58
13
57
14
56
15
55
16
54
VIEW
17
53
FROM
18
52
19
51
ABOVE
20
50
21
49
22
48
23
47
24
46
25
45
26
44
27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43
PUMA 68F32006
D16
D17
D18
D19
D20
D21
D22
D23
GND
D24
D25
D26
D27
D28
D29
D30
D31
A0-A19
CE1-4
OE
GND
Address Input
Chip Enables
Output Enable
Ground
Pin Functions
D0-D31
WE
Vcc
Vcc
A11
A12
A13
A14
A15
A16
CS1
OE
CS2
A17
NC
NC
NC
A18
GND
A19
Data Inputs/Outputs
Write Enable (WE1-4 for 'A' version)
Power (+5V)
PUMA 68F32006/A-90/12/15
Issue 4.2 : December 1999
Absolute Maximum Ratings
(1)
Voltage on any pin w.r.t. Gnd
Supply Voltage
(2)
Voltage on A9 w.r.t. Gnd
(3)
Storage Temperature
Notes : (1)
max
-2.0 to +7
-2.0 to +7
-2.0 to +13.5
-65 to +125
unit
V
V
V
°C
(2)
(3)
Stresses above those listed may cause permanent damage to the device. This is a stress rating only and functional
operationof the device at those or any other conditions above those indicated in the operational sections of this
specification
is not implied.
Minimum DC voltage on any input or I/O pin is -0.5V. Maximum DC voltage on output and I/O pins is Vcc+0.5V
During transitions voltage may overshoot by +/-2V for upto 20ns
Minimum DC input voltage on A9 is -0.5V during voltage transitions, A9 may overshoot Vss to -2V for periods of up to
20ns, maximum DC input voltage in A9 is 12.5V which may overshoot to 14.0V for periods up to 20ns
Recommended Operating Conditions
Parameter
Supply Voltage
Input High Voltage
Input Low Voltage
Operating Temperature
V
CC
V
IH
V
IL
T
A
T
AI
T
AM
min
4.5
2.0
-0.5
0
-40
-55
typ
5.0
-
-
-
-
-
max
5.5
V
CC
+0.5
V
CC
+0.8
70
85
115
unit
V
V
V
°C
O
C (-I suffix)
O
C (-M suffix)
DC Electrical Characteristic
(T
A
=-55°C to
+
125°C,V
CC
=5V
±
10%)
Parameter
Symbol Test Condition
V
CC
=V
CC
max, V
IN
=0V or V
CC
V
CC
=V
CC
max, A9=12V
V
CC
=V
CC
max, V
IN
=0V or V
CC
V
CC
=V
CC
max, V
OUT
=0V or V
CC
CE=V
IL(1)
, OE=V
IH
, I
OUT
=0mA,
f=6MHz
As above
As above
Programming in Progress
As above
As above
V
CC
=V
CC
max, CE=V
IH(1)
OE = V
IH
V
CC
= 5.0V
I
OL
=12mA. V
CC
= V
CC
min.
I
OH
=-2.5mA. V
CC
= V
CC
min.
min
-
-
-
-
-
-
-
-
-
-
-
11.5
-
2.4
3.2
typ max
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
±4
200
±1
±4
120
62
33
240
122
63
4
12.5
0.45
-
4.2
Unit
µA
µA
µA
µA
mA
mA
mA
mA
mA
mA
mA
V
V
V
V
I/P Leakage CurrentAddress, OE, WE I
LI1
A9 Input Leakage Current
I
LI2
Other Pins I
LI3
Output Leakage Current
I
LO
V
CC
Operating Current
32 bit I
CCO32
16 bit I
CCO16
8 bit I
CCO8
V
CC
Program/Erase Current
32 bit
16 bit
8 bit
I
CCP32
I
CCP16
I
CCP8
I
SB1
V
ID
V
OL
V
OH1
V
LKO
Standby Supply Current
Autoselect / Sector Protect Voltage
Output Low Voltage
Output High Voltage
Low V
CC
Lock-Out Voltage
Notes (1) CE above are accessed through CE1-4. These inputs must be operated simultaneoulsy for 32 bit operation,
in pairs in 16 bit mode and singly for 8 bit mode.
2
PUMA 68F32006/A-90/12/15
Issue 4.2 : December 1999
Capacitance
(T
A
=25°C,f=1MHz)
Parameter
Input CapacitanceAddress, OE, WE
Other pins
Output Capacitance
32 bit
Symbol
C
IN1
C
IN2
C
OUT32
Test Condition
V
IN
=0V
V
IN
=0V
V
OUT
=0V
typ
-
-
-
max
35
14
54
Unit
pF
pF
pF
Note: These parameters are calculated, not measured.
AC Test Conditions
* Input pulse levels : 0.0V to 3.0V
* Input rise and fall times : 5 ns
* Input and output timing reference levels : 1.5V
* VCC = 5V +/- 10%
* Module tested in 32 bit mode
I/O Pin
166
Ω
1.76V
30pF
3
PUMA 68F32006/A-90/12/15
Issue 4.2 : December 1999
AC OPERATING CONDITIONS
Read Cycle
Parameter
Read Cycle Time
Address to output delay
Chip enable to output
Output enable to output
Output enable to output High Z
Output hold time from address
Symbol
t
RC
t
ACC
t
CE
t
OE
t
DF
t
OH
min
90
-
-
-
-
0
90
typ max
-
-
-
-
-
-
-
90
90
40
20
-
Unit
ns
ns
ns
ns
ns
ns
CE or OE whichever occurs first
Parameter
Read Cycle Time
Address to output delay
Chip enable to output
Output enable to output
Output enable to output High Z
Output hold time from address
Symbol
t
RC
t
ACC
t
CE
t
OE
t
DF
t
OH
min
120
-
-
-
-
0
120
typ max
-
-
-
-
-
-
-
120
120
50
30
-
min
150
-
-
-
-
0
150
typ max
-
-
-
-
-
-
-
150
150
55
35
-
Unit
ns
ns
ns
ns
ns
ns
CE or OE whichever occurs first
4
PUMA 68F32006/A-90/12/15
Issue 4.2 : December 1999
Write/Erase/Program
Parameter
Symbol
min
90
typ
-
-
-
-
-
-
-
-
-
-
-
8
1
-
max
-
-
-
-
-
-
-
-
-
-
-
-
15
-
unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
sec
µs
Write Cycle time
(2)
Address Setup time
Address Hold time
Data Setup Time
Data hold Time
Output Enable Setup Time
Read Recover before Write
CE setup time
CE hold time
WE Pulse Width
WE Pulse Width High
Byte Programming operation
Sector Erase operation
(1)
Vcc setup time
(2)
t
WC
t
AS
t
AH
t
DS
t
DH
t
OES
t
GHWL
t
CE
t
CH
t
WP
t
WPH
t
WHWH1
t
WHWH2
t
VCS
90
0
45
45
0
0
0
0
0
45
20
-
-
50
Parameter
Symbol
min
120
typ
-
-
-
-
-
-
-
-
-
-
-
8
1
-
max
-
-
-
-
-
-
-
-
-
-
-
-
15
-
min
150
0
50
50
0
0
0
0
0
50
20
-
-
50
150
typ
-
-
-
-
-
-
-
-
-
-
-
8
1
-
max
-
-
-
-
-
-
-
-
-
-
-
-
15
-
unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
sec
µs
Write Cycle time
(2)
Address Setup time
Address Hold time
Data Setup Time
Data hold Time
Output Enable Setup Time
Read Recover before Write
CE setup time
CE hold time
WE Pulse Width
WE Pulse Width High
Byte Programming operation
Sector Erase operation
(1)
Vcc setup time
(2)
t
WC
t
AS
t
AH
t
DS
t
DH
t
OES
t
GHWL
t
CE
t
CH
t
WP
t
WPH
t
WHWH1
t
WHWH2
t
VCS
120
0
50
50
0
0
0
0
0
50
20
-
-
50
Notes: (1) This does not include the preprogramming time.
(2) Not 100% tested.
5
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