DDR DRAM, 16MX16, 0.75ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66
| Parameter Name | Attribute value |
| Is it lead-free? | Contains lead |
| Is it Rohs certified? | incompatible |
| Maker | SAMSUNG |
| Parts packaging code | TSOP2 |
| package instruction | TSOP2, TSSOP66,.46 |
| Contacts | 66 |
| Reach Compliance Code | compliant |
| ECCN code | EAR99 |
| access mode | FOUR BANK PAGE BURST |
| Maximum access time | 0.75 ns |
| Other features | AUTO/SELF REFRESH |
| Maximum clock frequency (fCLK) | 133 MHz |
| I/O type | COMMON |
| interleaved burst length | 2,4,8 |
| JESD-30 code | R-PDSO-G66 |
| JESD-609 code | e0 |
| length | 22.22 mm |
| memory density | 268435456 bit |
| Memory IC Type | DDR DRAM |
| memory width | 16 |
| Number of functions | 1 |
| Number of ports | 1 |
| Number of terminals | 66 |
| word count | 16777216 words |
| character code | 16000000 |
| Operating mode | SYNCHRONOUS |
| Maximum operating temperature | 70 °C |
| Minimum operating temperature | |
| organize | 16MX16 |
| Output characteristics | 3-STATE |
| Package body material | PLASTIC/EPOXY |
| encapsulated code | TSOP2 |
| Encapsulate equivalent code | TSSOP66,.46 |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE, THIN PROFILE |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| power supply | 2.5 V |
| Certification status | Not Qualified |
| refresh cycle | 8192 |
| Maximum seat height | 1.2 mm |
| self refresh | YES |
| Continuous burst length | 2,4,8 |
| Maximum slew rate | 0.3 mA |
| Maximum supply voltage (Vsup) | 2.7 V |
| Minimum supply voltage (Vsup) | 2.3 V |
| Nominal supply voltage (Vsup) | 2.5 V |
| surface mount | YES |
| technology | CMOS |
| Temperature level | COMMERCIAL |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | GULL WING |
| Terminal pitch | 0.65 mm |
| Terminal location | DUAL |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| width | 10.16 mm |

| K4H561638F-TCA2 | K4H561638F-TCB0 | K4H561638F-TLA2 | K4H561638F-TLB0 | K4H561638F-TCB3 | K4H561638F-TLB3 | |
|---|---|---|---|---|---|---|
| Description | DDR DRAM, 16MX16, 0.75ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 | DDR DRAM, 16MX16, 0.75ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 | DDR DRAM, 16MX16, 0.75ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 | DDR DRAM, 16MX16, 0.75ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 | DDR DRAM, 16MX16, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 | DDR DRAM, 16MX16, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 |
| Is it Rohs certified? | incompatible | incompatible | incompatible | incompatible | incompatible | incompatible |
| Maker | SAMSUNG | SAMSUNG | SAMSUNG | SAMSUNG | SAMSUNG | SAMSUNG |
| Parts packaging code | TSOP2 | TSOP2 | TSOP2 | TSOP2 | TSOP2 | TSOP2 |
| package instruction | TSOP2, TSSOP66,.46 | TSOP2, TSSOP66,.46 | TSOP2, TSSOP66,.46 | TSOP2, TSSOP66,.46 | TSOP2, TSSOP66,.46 | TSOP2, TSSOP66,.46 |
| Contacts | 66 | 66 | 66 | 66 | 66 | 66 |
| Reach Compliance Code | compliant | compliant | compliant | compliant | compliant | compliant |
| ECCN code | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| access mode | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST |
| Maximum access time | 0.75 ns | 0.75 ns | 0.75 ns | 0.75 ns | 0.7 ns | 0.7 ns |
| Other features | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH |
| Maximum clock frequency (fCLK) | 133 MHz | 133 MHz | 133 MHz | 133 MHz | 166 MHz | 166 MHz |
| I/O type | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON |
| interleaved burst length | 2,4,8 | 2,4,8 | 2,4,8 | 2,4,8 | 2,4,8 | 2,4,8 |
| JESD-30 code | R-PDSO-G66 | R-PDSO-G66 | R-PDSO-G66 | R-PDSO-G66 | R-PDSO-G66 | R-PDSO-G66 |
| JESD-609 code | e0 | e0 | e0 | e0 | e0 | e0 |
| length | 22.22 mm | 22.22 mm | 22.22 mm | 22.22 mm | 22.22 mm | 22.22 mm |
| memory density | 268435456 bit | 268435456 bit | 268435456 bit | 268435456 bit | 268435456 bit | 268435456 bit |
| Memory IC Type | DDR DRAM | DDR DRAM | DDR DRAM | DDR DRAM | DDR DRAM | DDR DRAM |
| memory width | 16 | 16 | 16 | 16 | 16 | 16 |
| Number of functions | 1 | 1 | 1 | 1 | 1 | 1 |
| Number of ports | 1 | 1 | 1 | 1 | 1 | 1 |
| Number of terminals | 66 | 66 | 66 | 66 | 66 | 66 |
| word count | 16777216 words | 16777216 words | 16777216 words | 16777216 words | 16777216 words | 16777216 words |
| character code | 16000000 | 16000000 | 16000000 | 16000000 | 16000000 | 16000000 |
| Operating mode | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS |
| Maximum operating temperature | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C |
| organize | 16MX16 | 16MX16 | 16MX16 | 16MX16 | 16MX16 | 16MX16 |
| Output characteristics | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| encapsulated code | TSOP2 | TSOP2 | TSOP2 | TSOP2 | TSOP2 | TSOP2 |
| Encapsulate equivalent code | TSSOP66,.46 | TSSOP66,.46 | TSSOP66,.46 | TSSOP66,.46 | TSSOP66,.46 | TSSOP66,.46 |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | SMALL OUTLINE, THIN PROFILE | SMALL OUTLINE, THIN PROFILE | SMALL OUTLINE, THIN PROFILE | SMALL OUTLINE, THIN PROFILE | SMALL OUTLINE, THIN PROFILE | SMALL OUTLINE, THIN PROFILE |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| power supply | 2.5 V | 2.5 V | 2.5 V | 2.5 V | 2.5 V | 2.5 V |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| refresh cycle | 8192 | 8192 | 8192 | 8192 | 8192 | 8192 |
| Maximum seat height | 1.2 mm | 1.2 mm | 1.2 mm | 1.2 mm | 1.2 mm | 1.2 mm |
| self refresh | YES | YES | YES | YES | YES | YES |
| Continuous burst length | 2,4,8 | 2,4,8 | 2,4,8 | 2,4,8 | 2,4,8 | 2,4,8 |
| Maximum slew rate | 0.3 mA | 0.3 mA | 0.3 mA | 0.3 mA | 0.35 mA | 0.35 mA |
| Maximum supply voltage (Vsup) | 2.7 V | 2.7 V | 2.7 V | 2.7 V | 2.7 V | 2.7 V |
| Minimum supply voltage (Vsup) | 2.3 V | 2.3 V | 2.3 V | 2.3 V | 2.3 V | 2.3 V |
| Nominal supply voltage (Vsup) | 2.5 V | 2.5 V | 2.5 V | 2.5 V | 2.5 V | 2.5 V |
| surface mount | YES | YES | YES | YES | YES | YES |
| technology | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
| Temperature level | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL |
| Terminal surface | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| Terminal form | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING |
| Terminal pitch | 0.65 mm | 0.65 mm | 0.65 mm | 0.65 mm | 0.65 mm | 0.65 mm |
| Terminal location | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL |
| Maximum time at peak reflow temperature | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| width | 10.16 mm | 10.16 mm | 10.16 mm | 10.16 mm | 10.16 mm | 10.16 mm |
| Is it lead-free? | Contains lead | Contains lead | Contains lead | Contains lead | - | Contains lead |